TP210 Search Results

Contextual Info: TP2105 Ü 3W Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVdss / BVdgs -50V R d S ON P rod uct m arking fo r SOT-23: Order Number/Package ^G S (th ) (max) (max) TO-236AB* TO-92 Die 6Q -2.0 V TP2105K1 T P 21 05N 3 T P 21 05N D

SOT-23 IP

Abstract: TP2104 Diode SOT-23 marking 3V
Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

p-channel sot-23 p1l

Abstract: TP2104 TP2104K1 TP2104N3 TP2104ND
Contextual Info: TP2104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die P1L❋ -40V 6.0Ω -2.0V TP2104K1 TP2104N3 TP2104ND where ❋ = 2-week alpha date code

Contextual Info: Supertex inc. TP2104 P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds

TP213

Abstract: TP670 TP660 TP206 TP210 BOX CLAMPS
Contextual Info: Steel Switch Boxes 21/2" DEEP SWITCH BOXES – "INSTANT ON" – 12.5 CUBIC INCH CAPACITY 2" WIDE x 3" LONG WITH BUMPS – CLAMPS IN EACH END BUMPS LEVEL THE BOX AGAINST THE SIDE OF STUD, TOP TO BOTTOM, FRONT TO BACK Steel Boxes TP206 TP210 Cat. # Clamps

TP2104

Contextual Info: Supertex inc. TP2104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TP2104 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

p-channel sot-23 p1l

Abstract: TP2106K1 TP2106N3 SOT-23 Marking code MU T-23 p-channel sot-23 .5A marking 4U diode MARKING p1l tp2106
Contextual Info: TP2106 &à Supertex inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss/ R DS ON ^GSfth) (max) 60 (max) -2.0V b v dgs -60V Order Number/Package TO-92 SOT-231 TP2106K1 TP2106N3 Product marking for SOT-23:

TRANSISTOR MARKING CODE TP

Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

Tp2105

Abstract: TP2105K1 marking 8A sot-23 MOS 20V 0.5A sot-23 74w datasheet TP2105N3 74W MARKING CODE SOT 23 Diode SOT-23 marking 3V tp2105k sot-23 MARKING CODE GS
Contextual Info: TP2105 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die P1L❋ -50V 6Ω -2.0V TP2105K1 TP2105N3 TP2105ND where ❋ = 2-week alpha date code

206g rectifier

Abstract: 200G 206G 208G TP200G TP201G
Contextual Info: 2.0A Glass Passivated Bridge Rectifier TP200G – TP210G 2.0A Glass Passivated Bridge Rectifier Features • Glass passivated chip junction • High surge current capability • High case dielectric strength • Ideal for printed circuit boards • High temperature soldering guaranteed: 260˚C/10 seconds

SMBJ16CA

Contextual Info: Isolated Transmitter TP210 Active Precision, Wide Bandwidth Isolation Amplifier FEATURES z z z z z z z z z z 3-port isolation input, output and power supply High Accuracy Level (0.05% F.S.) High Linearity (0.05% F.S.) High Isolation (2.5kVDC/60s) Ultra low Temperature Drift (25PPM/℃)

Contextual Info: TP2104 Supertex inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dgs -40V If b v dss/ 6 .0 ÌÌ P roduct m arking fo r SO T-23: Order Num ber/Package ^G S th (max) TO-236AB* TO-92 Die -2.0 V TP2104K1 T P 2104N 3

Contextual Info: TP2106K1 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)160m @Temp (øC)150õ IDM Max (@25øC Amb)800m @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)360m# Minimum Operating Temp (øC)-55

MARKING CODE DG SOT 23

Abstract: TP2106N3
Contextual Info: TP2106 inc. P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Standard Commercial Devices BVdss / R[>S ON ^ G S flh ) B V Dg s (max) (max) -60V 6£i -2.0V Order Number/Package SOT-231 TO-92 TP2106K1 TP2106N3 Product marking for SOT-23: P1L*

TA 7129

Abstract: ac drives ls 600 TP2104K1
Contextual Info: TP2104 Superte x inc. Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number/Package BVDSS/ R d S ON Vos(th) BVoos (max) (max) TO-236AB* TO-92 Die PM * -40V 6.00 -2.0V TP2104K1 TP2104N3 TP2104ND

sot-23 74w datasheet

Abstract: TP2104 TP2104K1 TP2104N3 TP2104ND TA 7129 P TA 7129
Contextual Info: TP2104 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Product marking for SOT-23: Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* TO-92 Die P1L❋ -40V 6.0Ω -2.0V TP2104K1 TP2104N3 TP2104ND where ❋ = 2-week alpha date code

TP2104

Contextual Info: TP2104 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 30 30 8.0 ± 1.0 Au 1 (mils) TP2104 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain

Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling

STP2104

Contextual Info: TP2104 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► This low threshold enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This

SAG1

Abstract: EL7156
Contextual Info: TC253SPD 680āxā500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 D Very Low Noise, High Sensitivity, D D D D D D D D D DUAL-IN-LINE PACKAGE TOP VIEW ODB 1 12 IAG1 IAG2 2 11 SAG1 SAG2 3 10 SUB SRG1 4 9 ADB SRG2 5 8 NC CMG 6 7 Vout

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

LG 42 t

Contextual Info: TP2424 TP2424 Low Threshold Pre-Release Information P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* -240V 8.0Ω -2.4V -800mA TP2424N8 * Same as SOT-89.