TOSHIBA MG75 Search Results

Contextual Info: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA {DISCRETE/OPTO} TO DT-33'30" 90D 16242 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA DE I TDTTSSD O O l t ^ a 2 SEMICONDUCTOR TOSHIBA GTR MODULE MG75G6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

MG75G2cl1 toshiba

Abstract: MG75G2CL1
Contextual Info: TOSHIBA {DISCRETE/OPTO} TO .DE | ^0^7550 DDlbE37 T 90D 16237 9097250 TOSHIBA DISCRETE/OPTO • SEMICONDUCTOR , MG75G1JL1 MG75G2CL1 MG75G2DL1 TECHNICAL DATA MG75G1JL1 Weight : 205g MG75G2CL1 El C3 MG75G2DL1 Height : 245g ST 1 A 2 A TOSHIBA CORPORATION - 243 -

Contextual Info: TOSHIBA {DISCRETE/OP T03- ^ 0 1 7 2 5 0 9097250 TOSHIBA DISCRETE/OPTO ¿/iuhihi 90D SEMICONDUCTOR 16339 DDltaa*! L DT'23'3£ TOSHIBA G-TR MODULE MG75M2CK1 SILICON NPN TRIPLE DIFFUSED TYPE TECHNICAL DATA HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

Contextual Info: TOSHIBA { D IS CR ETE/O PT O} ^0 D E I TDTTSSO DOlbOTñ 4 90D 16078 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A SEMICONDUCTOR DT ' ^ 3 - 3 5 TOSHIBA GTR MODULE MG75Q2YK1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS.

MG75H2CL1

Abstract: MG75H2DL2 Ft-313 9097250 TOSHIBA
Contextual Info: TOSHIBA {DISÇRETE/OPTO} "to 9097250 TOSHIBA DISCRETE/OPTO SEMICONDUCTOR de I T G T 7 a s a DDitaM t. □ 9 0 D 16246 D T -3 3 - 35: MG75H2CL1 MG75H2DL2 TECHNICAL DATA Uni t in mm H4-O E2 Cl o- Bl E1/C2 B Z MG75II2CL1 El C2 MG75H2DL2 Weight TOSHIBA CORPORATION

Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA TOSHIBA TO DE § ÌCH7E5D DDltD7M 7 f~ <D I S C R E T E / O P T O 90D SEMICONDUCTOR 16074 U T - 3 3 -35' TOSHIBA GTR MODULE M G 7 5 M 2 Y K 1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS.

4A05 diode

Abstract: MG75J2YS50 ct 4a05 toshiba mg75j2ys50 MG75J MG75J2 100/diode 4a05
Contextual Info: TOSHIBA MG75J2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. The Electrodes are Isolated from Case. High Input Impedance. Includes a Complete Half Bridge in One Package. Enhancement-Mode.

Contextual Info: TOSHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

X15V

Abstract: MG75Q2YS51
Contextual Info: TOSHIBA MG75Q2YS51 MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

X15V

Abstract: DT700 MG75Q2YS50 MG75Q2 mg75q2ys
Contextual Info: TOSHIBA MG75Q2YS50 MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

AST0

Abstract: MG75Q1ZS50
Contextual Info: TOSHIBA MG75Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q1ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.) Enhancement-Mode

MG75J1BS11

Abstract: TOSHIBA IGBT DATA BOOK TOSHIBA IGBT
Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG75Q1BS11

Contextual Info: TOSHIBA M G75Q 1BS11 MG75Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage: Vce (sat) —2.7V(Max.) Enhancement-Mode

EM-553 motor

Contextual Info: TOSHIBA MG75Q2YS52 MG75Q2YS52 TEN TATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POW ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.3/^s Max. Inductive Load Low Saturation Voltage = VCE (sat) = 3.6V (Max.)

Contextual Info: TOSHIBA -CDISCRETE/OPTO} ! 9097250 TOSHIBA DISCRETE/OPTO TO SH IB A TD ]> F | SOTTESO 90D 16014 SEMICONDUCTOR O O lb O m 0 7 ^ 33 .35- TOSHIBA CTR TRANSISTOR MG7 5G2YL1 A TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HI RH POWER SWITCHING APPLICATIONS.

TOSHIBA IGBT DATA BOOK

Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

MG75Q2YS42

Abstract: 2805 diode bridge diode 3a05
Contextual Info: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.) Enhancement-Mode

MG75J6ES50

Contextual Info: TOSHIBA MG75J6ES50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75J6ES50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • • The Electrodes are Isolated from Case. High Input Impedance. 6 IGBTs Built Into 1 Package. Enhancement-Mode.

MG75J1BS11

Contextual Info: MG75J1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75J1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33F2A Maximum Ratings Ta = 25°C

MG75J1ZS40

Abstract: ZS40
Contextual Info: TOSHIBA MG75J1ZS40 MG75J1 ZS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2-FAST-ON-TAB #110 MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf= 0.35,«s Max. trr = 0.15/^ (Max.) Low Saturation Voltage

MG75Q2YS52

Contextual Info: TOSHIBA TENTATIVE MG75Q2YS52 MG75Q2YS52 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage : v CE(sat) = 3-ev (Max.)

MG75J1ZS50

Abstract: ZS50 MG75J1Z 4A05 diode
Contextual Info: TOSHIBA MG75J1ZS50 MG75J1 ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 2-FAST-ON-TAB #110 The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One

MG75Q1BS11

Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C