MG75Q2 Search Results

Contextual Info: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

MG75Q2YS52

Contextual Info: TOSHIBA TENTATIVE MG75Q2YS52 MG75Q2YS52 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage : v CE(sat) = 3-ev (Max.)

Contextual Info: TO SHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 —FAST —ON —TAB #110 High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.)

MG75Q2YS42

Abstract: 2805 diode bridge diode 3a05
Contextual Info: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.) Enhancement-Mode

Contextual Info: MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS51 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Inductive load l Low saturation voltage : CE (sat) = 3.6 V (Max) l Enhancement-mode

Contextual Info: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE • « ■ m SILICON N CHANNEL IGBT Mr ■ Mr HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.) Low Saturation Voltage ^ v CE(sat) “ 4.0V (Max.)

Contextual Info: T O SH IB A MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG75Q2YS51 TOSHIBA GTR MODULE • « ■ a SILICON N CHANNEL IGBT Mr ■ mm Mr ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : t f = 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M f i 7a > ; n 7 Y < ; n n •« ■ Mr ■ Mr ^wr HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.) Low Saturation Voltage

MG75Q2YS50

Abstract: IGBT control circuit
Contextual Info: MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Iinductive load l Low saturation voltage : VCE (sat) = 3.6 V (Max) l Enhancement-mode

Contextual Info: T O S H IB A MG75Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG75Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load Low Saturation Voltage : ^ CE (sat) =3.6V (Max.)

Contextual Info: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

X15V

Abstract: MG75Q2YS51
Contextual Info: TOSHIBA MG75Q2YS51 MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

X15V

Abstract: DT700 MG75Q2YS50 MG75Q2 mg75q2ys
Contextual Info: TOSHIBA MG75Q2YS50 MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

Contextual Info: TO SH IBA MG75Q2YS52 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS52 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. / ^ \ T _3 _ J . * _ T _ 3 ig /iu u u c u v e L/uau

IC-75

Abstract: MG75Q2YS52
Contextual Info: TO SH IBA MG75Q2YS52 TOSHIBA GTR MODULE TENTATIVE SILICON N CHANNEL IGBT MG75Q2YS52 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3/^s Max. /^ \T _3_J.*_T _3 ig/iuuucuve L/uau Low Saturation Voltage

Contextual Info: MG75Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS40 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage+ : VCE(sat) = 4.0V (Max)

MG75Q2YS40

Abstract: VGEV12
Contextual Info: TOSHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 -F A ST -O N -T A B #110 High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage

MG75Q2YS50

Abstract: MG75q 16tf
Contextual Info: MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Iinductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode

MG75Q2YS11

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG75Q2YS11 GTR Module Unit in mm Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input im pedance • High speed: tf = 1 .0[is Max. • Low saturation: V CE tn- = 0.5 n s (Max.)

Contextual Info: TOSHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • High Input Impedance High Speed : tf=0.3/*s Max. @Inductive Load Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: T O SH IB A MG75Q2YS52 TENTATIVE TOSHIBA GTR MODULE •« ■ a HIGH POWER SWITCHING APPLICATIONS Mr SILICON N CHANNEL IGBT ■ Mr mt MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf =0.3^8 Max. Inductive Load Low Saturation Voltage : V C E (s a t) = 3.6V (Max.)

Contextual Info: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/is(Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.)