MG75Q Search Results

Contextual Info: TO SHIBA MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

Contextual Info: TOSHIBA MG75Q1BS11 M G 7 5 Q 1 BS1 1 TO SH IBA GTR M O D ULE SILICON N CHANNEL IGBT U nit in mm HIGH POWER; SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O.us Max. Low Saturation Voltage: V q e (sat) = 2.7V (Max.)

MG75Q2YS52

Contextual Info: TOSHIBA TENTATIVE MG75Q2YS52 MG75Q2YS52 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • High Input Impedance High Speed : tf=0.3/*s Max. Inductive Load Low Saturation Voltage : v CE(sat) = 3-ev (Max.)

TOSHIBA IGBT DATA BOOK

Abstract: TOSHIBA IGBT MG75Q1BS11 IGBT Guide
Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

Contextual Info: TO SHIBA MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M5 • • 2~05.6±o.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

Contextual Info: TO SHIBA MG75Q2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • 4 —FAST —ON —TAB #110 High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.)

MG75Q2YS42

Abstract: 2805 diode bridge diode 3a05
Contextual Info: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS42 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= O.ô^s Max. trr = 0.5/æ (Max.) Low Saturation Voltage : v CE(sat) =4.0V (Max.) Enhancement-Mode

MG75Q1BS11

Contextual Info: MG75Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG75Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C

Contextual Info: MG75Q1JS40 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1JS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs max trr = 0.5µs (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode

Contextual Info: MG75Q2YS51 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS51 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Inductive load l Low saturation voltage : CE (sat) = 3.6 V (Max) l Enhancement-mode

MG75Q1JS40

Contextual Info: T O SH IB A MG75Q1JS40 TOSHIBA GTR MODULE m •« ■ SILICON N CHANNEL IGBT r , 7 r n 1 i<;An m agr ■ w mm ■ ^ur HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5^s Max. trr = 0.5/üs (Max.) Low Saturation Voltage

Contextual Info: TOSHIBA MG75Q2YS42 TOSHIBA GTR MODULE • « ■ m SILICON N CHANNEL IGBT Mr ■ Mr HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf=0.5,«s Max. trr = 0.5,«s (Max.) Low Saturation Voltage ^ v CE(sat) “ 4.0V (Max.)

Contextual Info: T O SH IB A MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf= 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

Contextual Info: TOSHIBA MG75Q2YS51 TOSHIBA GTR MODULE • « ■ a SILICON N CHANNEL IGBT Mr ■ mm Mr ■ HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : t f = 0 .3 ^ s Max. Inductive Load Low Saturation Voltage • V c e (sat) —3.6V (Max.)

MG75Q2YS50

Abstract: IGBT control circuit
Contextual Info: MG75Q2YS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS50 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.3 µs Max @Iinductive load l Low saturation voltage : VCE (sat) = 3.6 V (Max) l Enhancement-mode

Contextual Info: TO SH IBA MG75Q1JS40 MG75Q1 JS40 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT HIGH P O W E R SW IT C H IN G APPLICATIO N S. Unit in mm C H O PPE R APPLIC ATIO N S. • • High Input Impedance High Speed : tf=0.5/^s Max. trr = 0.5/iS (Max.)

Contextual Info: T O SH IB A MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • 3-M 5 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage : v CE(sat) = 4-o v (Max.)

Contextual Info: T O S H IB A MG75Q2YS50 TO SH IBA GTR M O D U L E SILICON N C H A N N EL IGBT MG75Q2YS50 HIGH POW ER SW ITCHING APPLICATIONS M O T O R CONTRO L APPLICATIONS High Input Impedance High Speed : tf= 0.3/iS Max. @Inductive Load Low Saturation Voltage : ^ CE (sat) =3.6V (Max.)

Contextual Info: T O SH IB A MG75Q1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 7 5 Q 1 BS1 1 U n it in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance H ig h S p eed : tf=1.0,«s Max. Low Saturation Voltage: V q e ( s a t ) ~

Contextual Info: TO SHIBA MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG75Q2YS51 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • High Input Impedance • High Speed : tf= 0 .3 /*s Max. @Inductive Load • Low Saturation Voltage : VCE (sat) = 3.6V (Max.)

X15V

Abstract: MG75Q2YS51
Contextual Info: TOSHIBA MG75Q2YS51 MG75Q2YS51 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

X15V

Abstract: DT700 MG75Q2YS50 MG75Q2 mg75q2ys
Contextual Info: TOSHIBA MG75Q2YS50 MG75Q2YS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf=0.3,«s Max. @Induetive Load Low Saturation Voltage : VCE (gat) =3.6V (Max.) Enhancement-Mode

MG75Q1ZS50

Contextual Info: MG75Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode

MG75Q2YS42

Contextual Info: MG75Q2YS42 TOSHIBA GTR Module Silicon N Channel IGBT MG75Q2YS42 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.5µs Max trr = 0.5µs (Max) l Low saturation voltage : VCE(sat) = 4.0V (Max)