TOSHIBA 1SS Search Results

tb31224cf

Abstract: transistor 2sk1603 TA8264AHQ TC94A58FAG TA7769P TA8275HQ 2SK1603 ta8266hq 2SK2056 S2Y52
Contextual Info: 2005-2 PRODUCT GUIDE Semiconductor Product Guide 2005 Toshiba Electronics Malaysia Sdn. Bhd. Toshiba Semiconductor Thailand Co., Ltd. Toshiba Semiconductor (Wuxi) Co., Ltd. semiconductor http://www.semicon.toshiba.co.jp/eng Committed to people, Committed to the Future

1SS364

Contextual Info: 1SS364 TOSHIBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SS364

Contextual Info: 1SS364 TOSHIBA 1 SS364 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package. Small Total Capacitance : Cx = 1.2pF Max. Low Series Resistance : rs = 0.60 (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SS272

Contextual Info: TOSHIBA 1SS272 1 SS272 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS. + 0.2 = 25°C CHARACTERISTIC Maximum Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms)

Contextual Info: 1SS378 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER TYPE HIGH SPEED SWITCHING. • • Low Forward Voltage : Vp = 0.23V Typ. @Tp = 5mA Small Package : SC-70 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Maximum (Peak) Reverse Voltage SYMBOL

Contextual Info: 1SS397 TOSHIBA 1SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package :Vjr= 1.0V Typ. : V r = 400V (Min.)

1SS397

Contextual Info: 1SS397 TOSHIBA 1 SS397 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vjr = 1.0V Typ. VR —400V (Min.)

1SS399

Contextual Info: TOSHIBA 1SS399 1 SS399 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package Vp = 1.0V Typ. VR = 400V (Min.)

1SS362

Contextual Info: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance

SS307

Contextual Info: TOSHIBA 1SS307 1 SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE GENERAL PUROPOSE RECTIFIER APPLICATIONS. Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package • : : : ; +0.5 2.5 - 0.3 Vjr l.UV lyp. lR = 0.1nA(Typ.) Crp = 3.UpF (Typ.)

x300n

Abstract: 1SS387
Contextual Info: TOSHIBA 1SS387 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS387 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage : Vp 3 = 0.98V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance

TOSHIBA 1N DIODE

Contextual Info: TOSHIBA 1SS200 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS2Q0 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Low Forward Voltage : Vp 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance : C^ =2 .2pF' (Typ.)

1SS190

Contextual Info: TOSHIBA 1SS190 TOSHIBA DIODE 1 SILICON EPITAXIAL PLANAR TYPE S S 1 9 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time SYMBOL VF(1)

1SS306

Contextual Info: 1SS306 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS306 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. + 0.2 • • • • Low Forward Voltage Fast Reverse RecoveryTime Small Total Capacitance Small Package : Vp 2 —0.90V (Typ.)

Contextual Info: 1SS403 TOSHIBA TENTATIVE TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS403 Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS Two-pin small packages are suitable for higher mounting densities. Excellent in Forward Current and Forward Voltage Characteristics : V f 2 = 0.90 V (Typ.)

1SS360F

Contextual Info: 1SS360F TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS360F Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATIONS 1.6 ± 0.1 0.85 ±0.1 Small Package : 1608 Fiat Lead Excellent in Forward Current and Forward Voltage Characteristics VF 3 —0.92 V (Typ.)

1ss373

Contextual Info: 1SS373 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • 1 SS373 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA 0.8 ±0.1 MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING UNIT CHARACTERISTIC

Contextual Info: 1SS399 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE 1SS399 Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package + 0.2 : Vp = 1.0V Typ. : V r = 400V (Min.)

Contextual Info: TOSHIBA 1SS314 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS. Unit in mm • Small Package. • Small Total Capacitance : Ct = 1.2pF Max. • Low Series Resistance : rs = 0.5i2 (Typ.) MAXIMUM RATINGS (Ta = 25°C) SYMBOL RATING

1ss421

Abstract: TMP86FH12MG SSM3J108TU SSM3K101TU SSM3K102TU SSM3K104TU SSM3K105TU SSM3K106TU SSM3K107TU SSM3K116TU
Contextual Info: TOSHIBA SEMICONDUCTOR BULLETIN EYE JANUARY 2006 VOLUME 162 CONTENTS INFORMATION Toshiba and NEC Electronics to Collaborate on 45-nanometer System LSI Process

Contextual Info: TOSHIBA 1SS381 1 SS381 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE VHF TUNER BAND SWITCH APPLICATIONS • • • Small Package Small Total Capacitance Low Series Resistance : Ct = 1.2 pF Max. : rs = 0.6 fl (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

1SS398

Contextual Info: TOSHIBA 1SS398 1 SS398 TOSHIBA DIODE SILICON EPITAXIAL PLANAR DIODE Unit in mm HIGH VOLTAGE, HIGH SPEED SWITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package VF = 1.0V Typ. V r = 400V (Min.)

1SS307

Abstract: K3250
Contextual Info: TOSHIBA 1SS307 1 SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package +0.5 2.5-0.3 +0.25 1.5-0.15 VF = 1.0V Typ.

1SS368

Contextual Info: TOSHIBA 1SS368 1 SS368 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION Vp 3 = 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.) 0.8 ±0.1 io 1 ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Forward Voltage