TO5 TRANSISTOR BASE Search Results

NPN Transistor VCEO 1000V

Abstract: BUL54A-TO5
Contextual Info: SEME BUL54A-TO5 LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 8.51 0.34 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) Designed for use in electronic ballast applications 6.10 (0.240) 6.60 (0.260)

TO-205AA

Contextual Info: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

Darlington pair IC

Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

Contextual Info: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and

Contextual Info: SILICON NPN TRANSISTOR 2N2891LL • V BR CEO = 80V (Min). • Hermetic TO5 (TO-205AA) Metal Package. • Ideally Suited For Low Frequency Large Signal Applications (High Voltage). • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

transistor VCEO 1000V

Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
Contextual Info: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and

TO-205AA

Abstract: TO205AA
Contextual Info: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

Contextual Info: SILICON NPN TRANSISTOR 2N5786L • Low Saturation Voltage. High Gain At High Current. • Hermetic TO5 TO-205AA Metal Package. • Ideally suited for General Purpose Amplifier Applications. • High Reliability and Space Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)

2N2219

Abstract: 2N2219 transistor 2N2219A 2N2218 transistor NPN transistor 2n2218 Transistor 2N2219A transistor 2N2219 transistor 2n2218 2N2218A
Contextual Info: TECHNICAL DATA NPN SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/251 Devices 2N2218 2N2218A 2N2218AL Qualified Level JAN JANTX JANTXV JANS 2N2219 2N2219A 2N2219AL MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage

To5 transistor

Abstract: TRANSISTOR L 287 A kovar "nickel cap" TO5 gas sensor M5000 M5500 transistor d 808
Contextual Info: g GENERAL PURPOSE SENSORS GLASS-TO-METAL SEAL / TRANSISTOR BASE SENSORS TYPE M5000: Features • JEDEC “TO” style transistor base headers with flake thermistors suspended by their leads across the pins in a variety of electrical circuit configurations.

TRANSISTOR L 287 A

Abstract: To5 transistor TO-5 window Cap TRANSISTOR 287 A "nickel cap" M5000 M5500 kovar TO5 transistor base transistor 808
Contextual Info: GENERAL PURPOSE SENSORS GLASS-TO-METAL SEAL / TRANSISTOR BASE SENSORS TYPE M5000: Features • JEDEC “TO” style transistor base headers with flake thermistors suspended by their leads across the pins in a variety of electrical circuit configurations. • Flake thermistors are ideal for non-contact, infrared temperature

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

rca 2n3375

Abstract: 2N3553 equivalent RCA TO60 TRANSISTORS 40281 40280 RCA RF POWER TRANSISTOR CD2152 2N2876 RCA Transistors rca power transistor
Contextual Info: RF Power Transistors Featuring “overlay” Construction For HF-VHF-UHF Microwave Applications M olded-Silicone Hermetic Hermetic Hermetic Plastic Package Ceramic-Metal Ceramic-Metal Strip-L. Package Coaxial Package Small Ceramic-Metal Coaxial Package (Large)

Unitrode transistors data To5

Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
Contextual Info: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

Contextual Info: 2N2218A TO-5 w w w. c e n t r a l s e m i . c o m SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2218A TO-5 is a silicon NPN transistor manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications.

transistor pin socket

Abstract: Transistor 4515 TO100 TO5 transistor base TRANSISTOR 718
Contextual Info: R TI F I ED 2 T Y CE 900 ISO Q I UAL TO-3, TO-5, TO-100 TRANSISTOR SOCKETS SOCKETS FOR TO-5 & TO-100 HEAVY DUTY SOCKET FOR TO-3 Fully molded compact construction. Speeds transistor assembly. Incorporates ultra high quality, closed entry, sleeve type contacts. Accepts. .016 to .020

40411 transistor

Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66

NDE0003B

Contextual Info: LM195, LM395 www.ti.com SNOSBO4B – MAY 2004 – REVISED NOVEMBER 2004 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 A Typical Base Current

NDE0003B

Abstract: LM395 LM395T A-083081-2 RETS195H LM195 National LM195
Contextual Info: LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 A Typical Base Current

LM195

Contextual Info: LM195, LM395 www.ti.com SNOSBO4C – JUNE 1999 – REVISED APRIL 2013 LM195/LM395 Ultra Reliable Power Transistors Check for Samples: LM195, LM395 FEATURES 1 • • • • • • • • 2 Internal Thermal Limiting Greater than 1.0A Output Current 3.0 A Typical Base Current

tyco mil relay

Contextual Info: 1MS 1MSD 1MSDD 1MST TO-5 HIGH-PERFORMANCE RELAYS • ■ ■ 1MS 1MSD 1MSDD 1MST SENSITIVE TO-5 HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE SUPPRESSED/PROTECTED HIGH-PERFORMANCE RELAY SENSITIVE TO-5 DIODE