TO46 LENS PHOTOTRANSISTOR Search Results

CL9020

Abstract: til99 photoconductor CL5M9M CLM610 CLM6000 CLM3000 CLE3309B CL8601M-X cl703 clairex CLT2190-X
Contextual Info: DISCONTINUED PRODUCTS Call for Pricing Ph: 972-265-4900, email: clairex@clairex.com These parts are no longer made by Clairex and must be regarded as one time purchases. All parts with an X suffix will be retested prior to shipment. PART NUMBER C-100-A-X C-100-B-X

SMD PLCC-2 1210

Abstract: smd transistor nm OP505 circuit VCSEL lens array TRANSISTOR 935 SMD Plastic Encapsulate Diodes OP233 935 diode smd transistor A 935 opv302
Contextual Info: 1742-2012:QuarkCatalogTempNew 9/17/12 4:59 PM Page 1742 TEST & MEASUREMENT 20 Optical Components A subsidiary of TT electronics plc Phototransistors Vertical Cavity Surface Emitting Laser VCSEL RoHS OPV380 OPV302 OPV382 OPV332 OP802SL OP802WSL OP505 OP506

Contextual Info: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION

TIL31B

Abstract: IR TIL31B TO46 package TIL33B
Contextual Info: 62038 Mii GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE Replaces TIL 31-34 Features: Applications: • • • • • • • • Hermetically sealed High output, 940nm Small package Spectrally matched to the 61058 series detector OPTOELECTRONIC PRODUCTS DIVISION

SV5637-001

Abstract: VCSEL lens photodiode TO46 lens phototransistor lens photodiode phototransistor SV5637 TO-46 VCSEL phototransistor vcsel nm VCSEL 150 c 850 nm LED
Contextual Info: SV5637-001 VCSEL Components, Position Sensing, Domed Lens TO-46 Features l Representative photograph, actual product appearance may vary. Due to regional agency approval requirements, some products may not be available in your area. Please contact your regional

HOA1395

Abstract: Infrared Phototransistor
Contextual Info: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often

HOA1395

Abstract: dual Phototransistor mouse ACTIVE INFRARED MOTION DETECTOR TO46 lens phototransistor mouse Optical tachometer IR SENSOR wheel mouse HOA2498 HOA0149 HLC2705 mouse photodetector se3470
Contextual Info: Infrared Sensors Line Guide Solid, sensitive solutions. Optoelectronics integrates optical principles and semi-conductor electronics — the inter-conversion of electricity to light. In electronic systems where feedback and control systems are common, these infrared sensors are often

GaAlAs detector

Contextual Info: GaAlAs 880 nm IREDs - General Characteristics FEATURES PRODUCT DESCRIPTION • Nine standard packages in hermetic and low cost epoxy • End and side radiating packages • Graded output • High efficiency GaAlAs 880 nm LPE process delivers twice the power of conventional GaAs 940 nm emitters

IR LF 0038

Abstract: transistor tip 46 ir sensor 0038 TO46 lens phototransistor TIP 40c transistor QPD5223 LED 020 ir sensor LF 0038 sensor 452 TRANSISTOR tip 127
Contextual Info: [sQ PLASTIC TO-46/TO-18 PAIR OPTOELECTRONICS QPD5223 PACKAGE DIMENSIONS .190 4.83 .170(4.62) ~T REFERENCE SURFACE .230 (3.84) .220 (5.33) tv .0038 (.076) 'CATHODE .080 (20.3) MIN .230 (5.84) .210(5.33) REFERENCE SURFACE'S^ .800 (20.3) MIN •ANODE 0.031 (0.76)

Contextual Info: GaAs 940 nm Infrared Light Emitting Diodes Features Product Description • Three standard packages in hermetic and low cost epoxy • End radiating packages • High power GaAs, 940 nm LPE process This series of infrared emitting diodes IREDs consists of two

OP830

Abstract: OP800 OP910 OPV302
Contextual Info: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.

OPV302

Abstract: OP830 angle position sensors VCSEL OP800 OP910 TO46 package
Contextual Info: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.

Contextual Info: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.

OP290

Abstract: OP295 OP291 OP292 OP294 OP296 OP297 OP298 OP299 T-46
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

Contextual Info: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy

OP295

Abstract: OP290 OP298B OP297FAB OP298 OP296 OP297 OP299 T-46 OP291
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP290

Abstract: OP295 OP290C OP291 OP292 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP297FAB

Abstract: OP295 OP290 op295b
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP295

Abstract: OP290 OP292 OP297AB OP291 OP294 OP296 OP297 OP298 OP299
Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

OP295

Contextual Info: Plastic Infrared Emitting Diode OP290 Series Features: • • • • Choice of narrow or wide irradiance pattern Choice of power ranges Choice of T-1¾, TO-18 or T-46 package Higher power output than GaAs at equivalent LEDs Description: Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode LED that is molded in an

TIP 40c transistor

Abstract: transistor tip 46 Infrared phototransistor TO18 em 483
Contextual Info: [sQ PLASTIC TO-46/TO-18 PAIR OPTOELECTRONICS QPD5223 PACKAGE DIMENSIONS . 1 9 0 4 . 83 .170 ( 4.521 .190(4.83) .170(4.62) I REFERENCE SURFACE .230 (3.84) .220 (5.33) REFERENCE SURFACES^ .230 (5.84) .210(5.33) -L .080 (20.3) MIN 0.031 (0.76) 'EM ITTER

Contextual Info: 62038 GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE MICROPAC OPTOELECTRONIC PRODUCTS DIVISION 08/18/03 Features: Applications: • • • • • • • Hermetically sealed High output, 940nm Small package End-of-tape indicators Reflective sensors Card readers

transistor 8606

Abstract: TO46 lens phototransistor OT410D "photo transistor" ic 8606 410D OT410 OT410T TO46 TO46 package
Contextual Info: NPN Silicon Phototransistor Type OT 410D and OT 410T The OT410 sensors consist of a high gain NPN silicon photo transistor mounted in hermetically sealed TO-46 package. These sensors are ideally suited for hostile environment operation. The OT410D features a domed

IR LF 0038

Contextual Info: PLASTIC TO-46/TO-18 PAIR OPTOELECTRONICS QPD5223 PACKAGE DIMENSIONS I REFERENCE SURFACE v .230 3.84 .220 (5.33) REFERENCE SURFACE'S^ .0038 (.076) "C ATH O D E .080 (20.3) MIN .800 (20.3) MIN •ANODE COLLECTOR .05 (1.27) -J 100 (2.54) NOM NOM .223(5.72)