TO3 PACKAGE Search Results
TO3 PACKAGE Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| TPH1R306PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQH | Toshiba Electronic Devices & Storage Corporation | MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPHR8504PL | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) | Datasheet | ||
| TPH9R00CQ5 | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) | Datasheet | ||
| XPH2R106NC | Toshiba Electronic Devices & Storage Corporation | N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) | Datasheet |
TO3 PACKAGE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: -/ , Una. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 PMD18D100 NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm FEATURES • TO3 PACKAGE • 100V • 100APEAK L • 300 WATTS *.* DESCRIPTION TO3 Package. |
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pmd18d100100apeak100ma300us | |
6098B
Abstract: TO202 package SW253 SW63-6 PF527 6099B TO218 package CLP-204 6100B to3 HEATSINK
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o39/to5pf527ead063nnead063th+13 | |
TO3 package RthJA
Abstract: TO3 RthJA BD684 CS684 to3 HEATSINK
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cs684bd684to3 package rthjato3 rthja+1 | |
TO220 HEATSINK DATASHEET
Abstract: to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK
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ul94v-0o3p/to24750b220a50b247a+14 | |
NTE284
Abstract: NTE284MP NTE285 NTE284 equivalent audio amplifier 100w transistor npn 100w amplifier pnp matched pair 100w audio amplifier
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nte284nte285nte284mpnte285mp+6 | |
SMP525G-ENContextual Info: SMP525G-EN MECHANICAL DATA Dimensions in inches P.I.N. PHOTODIODE FEATURES PostScript Picture oved\packages\opto\to3 • ASYMMETRIC NARROW RECEIVING ANGLES • EXCELLENT LINEARITY • LOW NOISE • WIDE SPECTRAL RESPONSE • WIDE INTRINSIC BANDWIDTH • LOW LEAKAGE CURRENT |
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smp525g-enpackage1927900nm | |
RLCO-808-2000-TO3Contextual Info: RLCO-808-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 2 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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rlco-808-2000-to3 | |
NTE281
Abstract: NTE280 NTE281MCP
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nte280nte281nte280mpnte281mcp | |
RLCO-940-1000-TO3Contextual Info: RLCO-940-1000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 940 nm Optical Output Power: 1 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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rlco-940-1000-to3 | |
RLCO-808-3000-TO3Contextual Info: RLCO-808-3000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 808 nm Optical Output Power: 3 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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rlco-808-3000-to3 | |
300w power amplifier circuit diagram
Abstract: complementary npn-pnp darlington 300w NTE2350 NTE2349 300w transistor power amplifier circuit diagram COMPLEMENTARY HIGH POWER DARLINGTON TRANSISTORS SILICON COMPLEMENTARY transistors darlington NTE234
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nte2349nte2350250ma500ma+9 | |
RLCO-940-5000-TO3Contextual Info: RLCO-940-5000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 940 nm Optical Output Power: 5 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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rlco-940-5000-to3 | |
RLCO-940-2000-TO3Contextual Info: RLCO-940-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 940 nm Optical Output Power: 2 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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rlco-940-2000-to3 | |
RLCO-980-3000-TO3Contextual Info: RLCO-980-3000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 980 nm Optical Output Power: 3 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration PIN |
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rlco-980-3000-to3 | |
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NPN Transistor 1500V
Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
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nte238cont00vnpn transistor 1500vtransistor tl 187+2 | |
NTE283
Abstract: npn 10a 800v
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nte283npn 10a 800v | |
NTE165
Abstract: NPN Transistor 1500V
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nte165100manpn transistor 1500v | |
nte98Contextual Info: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly |
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nte98 | |
NPN Transistor 1500V
Abstract: NTE165
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nte165100manpn transistor 1500v | |
NTE934Contextual Info: NTE934 Integrated Circuit Positive 3 Terminal Voltage Regulator 13.8V ±5%, 5A Description: The NTE934 positive 3 terminal voltage regulator is a monolithic integrated circuit in a TO3 type package designed for use in applcations requiring a well regulated positive output voltage. Outstanding |
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nte934100khz120hz | |
NTE87
Abstract: NTE88 NTE88MCP NTE88M
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nte87nte88nte88mcpnte88m | |
NTE932Contextual Info: NTE932 Integrated Circuit 3−Terminal Positive Voltage Regulator 5V, 5A Description: The NTE932 is a 3−terminal fixed positive voltage regulator in a TO3 type package designed for use in applications requiring a well regulated positive output voltage. Outstanding features include full |
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nte932120hz | |
NPN Transistor 50A 400V
Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
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nte99npn transistor 50a 400vnpn 400v 40anpn darlington 400v 15a | |
NTE52Contextual Info: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for |
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nte52100ns150ns400ns | |