TO251SL Search Results

Contextual Info: Bulletin PD-21139 05/06 50UQ03GPbF 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 30V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 5.5 A VRRM 30 V IFSM @ tp = 5 s sine 240 A VF @ 5 Apk, TJ = 125°C

50UQ03G

Abstract: 50UQ03GPbF
Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

FMD03N60G

Abstract: 03n60 on semiconductor marking code dpack Diode SMD SJ 28
Contextual Info: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27 -'05 CHECKED Oct .-27 -'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

16JUL07

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

Contextual Info: DATE CHECKED Jan./26/’10 REVISIONS CHECKED Jan./26/’10 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Systems Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

AO4946

Abstract: AOZ1242 AO4407A AOZ1242AI AO7408 AO3460 AO4936 AOZ1212AI AOD484 ao4466
Contextual Info: ALPHA & OMEGA SEMICONDUCTOR Selector Guide Q2/Q3 2008 www.aosmd.com Technology. Innovation. Powering the Future. TABLE OF CONTENTS Corporate Overview Mosfets Power ICs Transient Voltage Suppressors TVS Package Types www.aosmd.com PAGE 2 PAGE 3 - 18 PAGE 19 - 22

10N60e

Abstract: POWER MOSFET P1 smd marking code ms5f6933 mosfet marking code AE on semiconductor marking code dpack Diode SMD SJ 04
Contextual Info: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent,

TO-251SL

Contextual Info: 50UQ03GPbF Vishay High Power Products Schottky Rectifier, 5.5 A FEATURES • 150 °C TJ operation Available • Unique I-PAK outline Base cathode RoHS* • Center tap configuration 4, 2 COMPLIANT • Small foot print • Low forward voltage drop • High frequency operation

10N60e

Abstract: fuji D4701 4010-N gcu 101
Contextual Info: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,

12N50E

Abstract: gcu 101
Contextual Info: Device Name DATE DRAWN Oct.-19-'07 CHECKED Oct.-19-'07 CHECKED Oct.-19-'07 NAME APPROVED : Type Name : DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent,

50UQ03G

Abstract: TO-251SL TO-251 weight PD-21139
Contextual Info: Bulletin PD-21139 05/06 50UQ03GPbF 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 30V Major Ratings and Characteristics Description/ Features Characteristics Values Units IF(AV) Rectangular 5.5 A VRRM 30 V IFSM @ tp = 5 s sine 240 A VF @ 5 Apk, TJ = 125°C

50UQ03G

Contextual Info: Bulletin PD-20681 09/04 50UQ03G 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics 50UQ03G Units The 50UQ03G I-PAK Schottky rectifier has been designed for applications requiring low forward drop and small foot prints

Contextual Info: Bulletin PD-20681 09/04 50UQ03G 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics 50UQ03G Units The 50UQ03G I-PAK Schottky rectifier has been designed for applications requiring low forward drop and small foot prints

50UQ03G

Abstract: TO251SL
Contextual Info: Bulletin PD-20681 09/04 50UQ03G 5.5 Amp SCHOTTKY RECTIFIER IF AV = 5.5Amp VR = 30V Description/ Features Major Ratings and Characteristics Characteristics 50UQ03G Units The 50UQ03G I-PAK Schottky rectifier has been designed for applications requiring low forward drop and small foot prints

fmd04n50g

Abstract: 534 SMD Marking Code smd diode 36A 2 LEADS
Contextual Info: DATE DRAWN Oct.-27-'05 CHECKED Oct.-27-'05 CHECKED Oct.-27-'05 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used

12N60ES

Abstract: 12N60E 12n60 on semiconductor marking code dpack 264MH Sj 07 DIODE SMD dpack marking code 23
Contextual Info: Device Name DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor

06N60E

Abstract: 06N60ES on semiconductor marking code dpack DIODE marking code SJ mosfet smd code tc fmc06n60es 15N 50 mosfet 06N6
Contextual Info: Device Name DATE DRAWN Sep.-30-'08 CHECKED Sep.-30-'08 CHECKED Sep.-30-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor