06n60
Abstract: 7a sf M6G DATASHEET
Contextual Info: 3VD393600YL 3VD393600YL Ø MOSFET 3VD393600YL 600V N MOS Ø Ø Ø Ø TO-220 06N60 Ø AC-DC DC-DC H Ø 4.03mm*3.76mm Ø 300±20 m Ø Al PMW Au Tamb=25°C (TO-220 ) VDS 600 V VGS ±30 V ID 7 A PD 110 W TJ -55 +150 °C Tstg -55 +150 °C (Tamb=25°C) BVDSS VGS=0V
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3vd393600ylo-22006n607a sf+1m6g datasheet
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FMA06N
Abstract: fma06n60e 06N60E
Contextual Info: DATE DRAWN Aug.-31-'07 CHECKED Aug.-31-'07 CHECKED Aug.-31-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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august-31-2007ms5f6907fma06n60eh04-004-05+3h04-004-03fma06n06n60e
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transistor df 331
Abstract: d39 marking
Contextual Info: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • High peak current capability • Ultra low effective capacitances
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spa06n60c3pg-to220-3-31sp00021630106n60c3+2transistor df 331d39 marking
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SMD Transistor g12
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spp06n60c3pg-to220-3-1q67040-s462906n60c3+1smd transistor g12
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06N60C3
Abstract: DF marking code smd transistor TRANSISTOR SMD MARKING CODE G12 smd transistor marking g12 smd marking F62 06N60 D31 SMD MARKING transistor smd marking ds TRANSISTOR SMD MARKING CODE df smd transistor ds
Contextual Info: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spd06n60c3pg-to252q67040-s463006n60c3+11pg-to252-3-1pg-to-252-3-11df marking code smd transistortransistor smd marking code g12smd transistor marking g12smd marking f6206n60d31 smd markingtransistor smd marking dstransistor smd marking code dfsmd transistor ds
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TC1793
Abstract: 6143d BTS500x0-1EGA BTS5264SF KP21x, KP22x piezo injector driver PG-TO220-7 bts500x0 50015-1TAA3 TLE 9221
Contextual Info: PROFET & SPI Power Controller SPOC Duo Smart Power Switches in Automotive Heating Systems Source: [ www.beru.com ] [ www.infineon.com/profet ] [ www.infineon.com/spoc ] Source: [ www.beru.com ] 2 Contents Product Selection 04 Typical Automotive Applications
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tc17936143dbts500x0-1egabts5264sf+6kp21x, kp22xpiezo injector driverpg-to220-7bts500x050015-1taa3tle 9221
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06N60E
Abstract: FMV06N60E ic MARKING QG
Contextual Info: DATE DRAWN Feb.-05-'08 CHECKED Feb.-05-'08 CHECKED Feb.-05-'08 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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fmv06n60ems5f7026h04-004-05h04-004-03+206n60eic marking qg
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06N60C3
Abstract: PG-TO220-3-31 Q67040-S4631 SPA06N60C3
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spa06n60c3p-to220-3-31pg-to220-3-31q67040-s4631+106n60c3
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06N60C3
Abstract: Q67040-S4629 SPP06N60C3 smd transistor marking G12 marking code ff p SMD Transistor 06n60
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spp06n60c3pg-to220-3-1q67040-s462906n60c3+3smd transistor marking g12marking code ff p smd transistor06n60
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06N60C3
Abstract: TRANSISTOR SMD MARKING CODE G12 Q67040-S4630
Contextual Info: 06N60C3 TM CoolMOS Power Transistor Product Summary Features V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spd06n60c3pg-to252q67040-s463006n60c3+3pg-to252-3-1pg-to-252-3-11transistor smd marking code g12
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06N60
Abstract: SPD06N60C3 SMD TRANSISTOR MARKING code DD infineon marking TO-252 06N60C3 Q67040-S4630 TRANSISTOR SMD MARKING CODE G12
Contextual Info: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spd06n60c3pg-to252q67040-s463006n60c3+406n60smd transistor marking code ddinfineon marking to-252transistor smd marking code g12
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06n60e
Abstract: 06N60
Contextual Info: DATE DRAWN Aug.-31-'07 CHECKED Aug.-31-'07 CHECKED Aug.-31-'07 NAME APPROVED DWG.NO. This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way w hats oever for the use of any third party nor
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TC1724
Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784
Contextual Info: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions
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tc1724tle 8760gdi injector drivertda 7368+6tda 7718tc179350010-1taa1dc-dc converter 50kw 100kwtc1782tc1784
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06N60E
Abstract: IRP10 06N60ES ic MARKING QG FMV06N60ES 06N60
Contextual Info: DATE DRAWN Sep.-30-'08 CHECKED Sep.-30-'08 CHECKED Sep.-30-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor
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06N60C3
Abstract: DF marking code smd transistor 06N60 smd transistor marking G12 SMD TRANSISTOR MARKING code DD transistor smd marking ds SMD Diode V6 marking code SMD Transistor g12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spp06n60c3pg-to220-3-1q67040-s462906n60c3+9df marking code smd transistor06n60smd transistor marking g12smd transistor marking code ddtransistor smd marking dssmd diode v6 marking codesmd transistor g12t r transistor smd marking codetransistor smd marking code df
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d39 marking
Abstract: 1620R
Contextual Info: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spp06n60c3pg-to220-3-1q67040-s462906n60c3+2d39 marking1620r
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smd marking F62
Abstract: 06N60 smd transistor marking G12
Contextual Info: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spd06n60c3pg-to252-3-1q67040-s463006n60c3+3smd marking f6206n60smd transistor marking g12
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06N60C3
Abstract: Q67040-S4630 SPD06N60C3 smd transistor marking G12 TRANSISTOR SMD MARKING CODE G12
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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spd06n60c3p-to252-3-1q67040-s463006n60c3+2smd transistor marking g12transistor smd marking code g12
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06n60
Abstract: smd transistor marking G12 06N60C3 06n60c Q67040-S4629 SPP06N60C3 DF marking code smd transistor
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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DF 331 TRANSISTOR
Abstract: 06N60C3 Q67040-S4631 SPA06N60C3
Contextual Info: 06N60C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω I D1) 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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06N60
Abstract: Q67040-S4629 SPP06N60C3 06N60C3 smd transistor marking G12
Contextual Info: 06N60C3 CoolMOS TM Power Transistor Product Summary Features • New revolutionary high voltage technology • Ultra low gate charge V DS @ T j,max 650 V R DS on ,max 0.75 Ω ID 6.2 A • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances
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600V igbt dc to dc buck converter
Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
Contextual Info: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]
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b192-h6780-g11-x-7600sp000008186vdsl6100i-e600v igbt dc to dc buck converter+9transistor smd code package sot89bts 2140 1b data sheettransistor smd code package sot23psb 6970 hl v1.3pef 24628 e v1.2-ginfineon psb 6970pef 4265 t v2.1ht 1200-4slb 9635
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tc1797ED
Abstract: Infineon Tricore TC1797 TC1797 TC1768 ISO26262 Infineon Tricore TC1767 TC1767ED 77GHz Radar siemens nox sensor TC1767
Contextual Info: Highly Integrated and Performance Optimized 32-bit microcontrollers for automotive and industrial applications [ www.infineon.com/TriCore ] 2 2 Contents Family Concept 04 TriCore -based Product Roadmap 07 Powertrain Applications 08 Safety Applications 12
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32-bitb158-h9282-x-x-7600tc1797edinfineon tricore tc1797+8tc1797tc1768iso26262infineon tricore tc1767tc1767ed77ghz radarsiemens nox sensortc1767
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Contextual Info: 3VD393600YL 3VD393600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD393600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced voltage-blocking capability.
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