TO247 PACKAGE Search Results

TO247 PACKAGE Result Highlights (5)

Part	Manufacturer	Description	Download
54ACT825/QKA	Rochester Electronics LLC	54ACT825/QKA - Dual marked (5962-9161101MKA), D-Type Flip-Flop, 5V, 24-CFP	PDF
TPH1R306PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQH	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)	Datasheet
TPHR8504PL	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)	Datasheet
TPH9R00CQ5	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)	Datasheet

TO247 PACKAGE Datasheets (3)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
TO-247 Package	Intersil	2 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE (FOR RECTIFIERS ONLY)	Original	PDF	9.8KB	1
TO-247 Package	Intersil	3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE	Original	PDF	10.71KB	1
TO-247 Package	Intersil	5 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE	Original	PDF	11.14KB	1

TO247 PACKAGE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
6073b Abstract: TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1 Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .	Original	5900pb o218/to247 isowatt220 6296b +146298b 6299b 6300b svb030wt 6073b to220 heatsink datasheet heatsinks heatsinks to247 to218 package sw38-4 6098b 6390b pf723 km150-1	PDF
FCH020WT Abstract: TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231 Contextual Info: HEATSINKS & MOUNTINGS TO218 & TO247 package HEATSINKS continued EAV series SFV041ST Compact, high power dissipation, vertical mounting extruded heatsinks with solderable fixing pins. Designed to accommodate a single TO218/TO247 package. Option of screw or clip mount with a choice of	Original	sfv041st o218/to247 eav025hc eav031hc +16eav038hc eav050hc eav063hc eav025cl eav031cl eav038cl fch020wt to220 heatsink datasheet sfv019wb sfv019na heatsinks to247 package to220 package clip-03 svt030ac tag 231	PDF
6073B Abstract: PF751 6043PB 6390B 6391b TO220 HEATSINK DATASHEET 6296B 6022B 7136D ML26AA Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .	Original	5900pb o218/to247 isowatt220 6296b +146298b 6299b 6300b svt030ac fch020wt 6073b pf751 6043pb 6390b 6391b to220 heatsink datasheet 6022b 7136d ml26aa	PDF
11n80c3 Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 Contextual Info: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type SPW11N80C3 Package P-TO247	Original	spw11n80c3 p-to247 q67040-s4440 11n80c3 +311n80c 80011a 11n80	PDF
6r045a Abstract: IPW60R045CPA 6r045 mosfet 6r045A IPW60R099CPA IPB60R099CPA IPB60R199CPA PG-TO-247-3 PG-TO247 Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ 600 V 0.045 Ω 150 nC Features • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability • Automotive AEC Q101 qualified	Original	ipw60r045cpa pg-to247-3 6r045a pg-to262-3-1 +9pg-to220-3-1 pg-to247-3-41 6r045 mosfet 6r045a ipw60r099cpa ipb60r099cpa ipb60r199cpa pg-to-247-3 pg-to247	PDF
IPW50R045CP Abstract: JESD22 Contextual Info: IPW50R045CP CoolMOSTM Power Transistor Product Summary Features • Worldwide best R DS,on in TO247 • Lowest figure of merit RON x Qg V DS @Tjmax 550 V R DS on ,max 0.045 Ω 150 nC Q g,typ • Ultra low gate charge • Extreme dv/dt rated PG-TO247 • High peak current capability	Original	ipw50r045cp pg-to247 ipp50r045cp 5r045p +1jesd22	PDF
sd 431 transistor Abstract: 6R045A 6r045 ED-44 diode Contextual Info: IPW60R045CPA CoolMOS Power Transistor Product Summary V DS R DS on ,max Q g,typ ed nd me ns om sig ec de tr w e no rn fo Features 600 V 0.045 Ω 150 nC • Worldwide best R ds,on in TO247 • Ultra low gate charge PG-TO247-3 • Extreme dv/dt rated • High peak current capability	Original	ipw60r045cpa 6r045a pg-to247-3 ipw60pg-to263-3-2 +6pg-to262-3-1 pg-to220-3-1 pg-to247-3-41 sd 431 transistor 6r045 ed-44 diode	PDF
TO220 HEATSINK DATASHEET Abstract: to220 mica 7721-7PPS Bush TO3 SILICONE MICA SHEET DATA SHEET 50A227B WARTH TO3P package 50B247A to3 HEATSINK Contextual Info: MOUNTING HARDWARE HEATSINKS & MOUNTINGS WASHERS Economical, commercial grade silicone rubber insulating washers reinforced with glass fibre. Flame retardant to UL94V-0. Supplied specifically for the packages shown below. Colour - Grey. TO220 TO3P/TO247 TO3	Original	ul94v-0 o3p/to247 50b220a 50b247a +1450b003a 50a220a 50a220b 50a103a o5/to39 to220 heatsink datasheet to220 mica 7721-7pps bush to3 silicone mica sheet data sheet 50a227b warth to3p package to3 heatsink	PDF
diode 104 Abstract: click 0819 SML5023BN Contextual Info: SEME SML5023BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC	Original	sml5023bn diode 104 click 0819	PDF
B4015L Abstract: MBR4015LWT Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt r14525 mbr4015lwt/d b4015l	PDF
B4015L Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package Employing the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d b4015l	PDF
BFC45 Contextual Info: SEME BFC45 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc45	PDF
BFC50 Abstract: BY 126 DIODE DYNAMIC RESISTANCE 1428-TR Contextual Info: SEME BFC50 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc50 by 126 diode dynamic resistance 1428-tr	PDF
"VDSS 800V" mosfet Abstract: BFC46 Contextual Info: SEME BFC46 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc46 vdss 800v" mosfet	PDF

Contextual Info: MBR4015LWT SWITCHMODE Schottky Power Rectifier TO247 Power Package . . . employing the Schottky Barrier principle in a large area metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt	PDF
TO247 package Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17 Contextual Info: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise	Original	6273b/pb o218/to247 6273b 6273pb +16100mm 150mm ead063nn ead063th clip-04 ean025bh to247 package to247 package dissipation kd501 to218 package bw38-4 heatsinks to247 to220 heatsink datasheet kl50-1 sw63-2 av17	PDF
SML5020BN Abstract: W112A Contextual Info: SEME SML5020BN LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC	Original	sml5020bn 380ms w112a	PDF
BFC51 Abstract: W64A Contextual Info: SEME BFC51 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc51 w64a	PDF
BFC44 Abstract: W52A Contextual Info: SEME BFC44 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc44 w52a	PDF
MBR4015LWT Abstract: MBR4015LWTG Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d mbr4015lwtg	PDF
BFC42 Contextual Info: SEME BFC42 LAB 4TH GENERATION MOSFET TO247–AD Package Outline. Dimensions in mm inches (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69	Original	bfc42	PDF
Contextual Info: MBR4015LWT SWITCHMODEt Schottky Power Rectifier TO247 Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low	Original	mbr4015lwt mbr4015lwt/d	PDF
Contextual Info: ICE47N60W Product Summary N-Channel Enhancement Mode MOSFET Features: TO247 Package Low rDS on Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance	Original	ice47n60w 250ua 187nc o-247 +60e-06 0e-05 0e-04 0e-03 0e-02 0e-01	PDF
F1S30P06 Abstract: RF1S30P06 RF1S30P06SM RFG30P06 RFP30P06 TB334 Contextual Info: [ /Title RFG30 P06, RFP30P 06, RF1S30 P06, RF1S30 P06SM /Subject (30A, 60V, 0.065 Ohm, PChannel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, PChannel Power MOSFETs, TO247, TO220AB, TO262AA, TO263AB) RFG30P06, RFP30P06, RF1S30P06, RF1S30P06SM	Original	rfg30 rfp30p rf1s30 p06sm +9o220ab o262aa o263ab rfg30p06 rfp30p06 f1s30p06 rf1s30p06 rf1s30p06sm tb334	PDF

TO247 PACKAGE Search Results

TO247 PACKAGE Result Highlights (5)

TO247 PACKAGE Datasheets (3)

TO247 PACKAGE Datasheets Context Search

6073b

FCH020WT

6073B

11n80c3

6r045a

IPW50R045CP

sd 431 transistor

TO220 HEATSINK DATASHEET

diode 104

B4015L

B4015L

BFC45

BFC50

"VDSS 800V" mosfet

TO247 package

SML5020BN

BFC51

BFC44

MBR4015LWT

BFC42

F1S30P06