TO218 Search Results

SCR 100A 800V

Abstract: scr control circuit for welding NTE5538 SCR 800V 50A 1250A2s
Contextual Info: NTE5538 Silicon Controlled Rectifier SCR 800V, 50 Amp, TO218 Isolated Description: The NTE5538 general purpose SCR is suited for power supplies up to 400Hz on resistive or inductive loads. Applications: D Motor Control D Overvoltage Crowbar Protection D Capacitive Discharge Ignition

NPN Transistor 1.5A 700V

Contextual Info: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection

BUV48A

Abstract: TIP35CW failure report IGBT B505 BDW83C BU941ZP TIP142 TIP2955 TIP34C tip35
Contextual Info: PRODUCT/PROCESS CHANGE NOTIFICATION PCN APM-PWR/07/2362 Notification Date 03/19/2007 Package change from TO218 to TO247 for Power Bipolar products PWR - PWR BIP/ IGBT/ RF 1/14 PCN APM-PWR/07/2362 - Notification Date 03/19/2007 Table 1. Change Identification

NTE2311

Abstract: npn 1000V 15A NPN Transistor VCEO 1000V
Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V

NTE390

Abstract: NTE391
Contextual Info: NTE390 NPN & NTE391 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE390 (NPN) and NTE391 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

darlington NPN 600V 8a transistor

Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Contextual Info: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output

NTE2317

Abstract: automotive ignition Designed for automotive ignition applications Electronic car ignition circuit vce 500v NPN Transistor
Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter

heat sink to220

Abstract: NTE402 Aluminum alloy 8053 TO126 TO126 transistor TO127 TO202 TO218 data-sheet to218 plastic NTE403
Contextual Info: NTE402 Hardware Heat Sink for Mounting 2 Plastic Power Types TO3P, TO126, TO127, TO202, TO218, TO220 Description: The NTE402 is a lightweight, channel style heat sink with a wide mounting surface for plastic power semiconductors. This device accomodates one or two devices and is excellent for circuit board

NTE270

Contextual Info: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.

TO247 package

Abstract: TO247 package dissipation KD501 TO218 package BW38-4 Heatsinks TO247 TO220 HEATSINK DATASHEET KL50-1 SW63-2 AV17
Contextual Info: HEATSINKS & MOUNTINGS TO202 package HEATSINKS KM series continued 6273B/PB 19.1 L High power dissipation, extruded heatsinks designed to accommodate one or more TO218/TO247 packages via a clip retaining feature clips available separately . Shaped to minimise

6073b

Abstract: TO220 HEATSINK DATASHEET Heatsinks Heatsinks TO247 TO218 package SW38-4 6098B 6390B PF723 KM150-1
Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS TO218 & TO247 package TO220 package continued 5900PB 30 max. 12.7 Vertical mounting twisted vane heatsink with rugged, solderable tags and a slotted hole to accommodate a single TO218/TO247 package. Black pre-anodised finish bare edges .

FCH020WT

Abstract: TO220 HEATSINK DATASHEET SFV019WB SFV019NA Heatsinks TO247 package TO220 package CLIP-03 SVT030AC tag 231
Contextual Info: HEATSINKS & MOUNTINGS TO218 & TO247 package HEATSINKS continued EAV series SFV041ST Compact, high power dissipation, vertical mounting extruded heatsinks with solderable fixing pins. Designed to accommodate a single TO218/TO247 package. Option of screw or clip mount with a choice of

Heatsinks TO247

Abstract: TO218 package TO247 package dissipation TO247 package EAB025FH SVB030WT TOP3 package EAC038HC EAB038HC EXK200R
Contextual Info: HEATSINKS & MOUNTINGS HEATSINKS SOT32/TO126 package TO218 & TO247 package Also covers DOP3 I , ISOWATT218, SOD93, SOT93, and TOP3(I) SVB030WT 30 max. 12.7 Twisted vane heatsink with integral fixing tags and a slotted hole designed to accommodate a single SOT32/TO126 package.

NTE2305

Contextual Info: NTE2305 NPN & NTE2306 (PNP) Silicon Complementary Transistors High Voltage Power Amplifier Description: The NTE2305 (NPN) and NTE2306 (PNP) are silicon complementary transistors in a TO218 type package designed for use in high power audio amplifier applications and high voltage switching regulator circuits.

NTE394

Contextual Info: NTE394 Silicon NPN Transistor Power Amp, High Voltage Switch Description: The NTE394 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching applications. Absolute Maximum Ratings: Collector–Emitter Voltage VBE = 0 , VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V

Contextual Info: NTE2317 Silicon NPN Transistor High Voltage Fast Switching Power Darlington Description: The NTE2317 is a multiepitaxial bipolar NPN transistor in a monolithic Darlington configuration mounted in a TO218 type package designed for use in automotive ignition applications and inverter

NPN Transistor VCEO 1000V

Abstract: 1000v, NPN NTE2310 transistor VCE 1000V transistor VCEO 1000V TO218 package transistor 1000V 6A high voltage fast switching npn 4A
Contextual Info: NTE2310 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2310 is a silicon multiepitaxial mesa NPN transistor in a TO218 type package designed for use in high voltage, fast switching industrial applications. Absolute Maximum Ratings:

NTE2301

Contextual Info: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction

Contextual Info: -Conduakoi ZPioducti, Line. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MTM15N20 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TO218AC MAXIMUM RATINGS MTH or MTM

P-TO220-5-62

Abstract: P-TO220-3-45 P-TO-220-3-45 E3062 to220 E3045 P-TO220-7-3 P-TO218-3-1 equivalent to220 E3043
Contextual Info: Packages 1 4 7 10 13 16 P-TO220-3-1 TO-220 AB P-TO220-5-3 (TO-220 AB/5) P-TO218-5-1 (TO-218 AB/5) P-TO220-7-230 (TO-220 AB/7 option E3230) P-DSO-20-7/-9 2 5 P-TO220-3-45 (TO-220 AB option E3045) P-TO220-5-43 (TO-220 AB/5 option E3043) P-TO220-7-1 8 11 14

NTE56031

Abstract: NTE56030 triac 600V 100A
Contextual Info: NTE56030 & NTE56031 TRIAC, 40 Amp TO218 Isolated Tab Description: The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Applications: D Phase Control D Static Switching

NTE392

Abstract: NTE393
Contextual Info: NTE392 NPN & NTE393 (PNP) Silicon Complementary Transistors General Purpose Description: The NTE392 (NPN) and NTE393 (PNP) are silicon compelementary transistors in a TO218 type package designed for general purpose power amplifier and switching applications.

NTE56031

Abstract: NTE56030 TRIACS 40A
Contextual Info: NTE56030 & NTE56031 TRIAC, 40 Amp Isolated Tab Description: The NTE56030 and NTE56031 are 40 Amp TRIACs in a TO218 type package with an isolated tab designed to be driven directly with IC and MOS devices. Absolute Maximum Ratings: Peak Repetitive Off–State Voltage Gate Open, TJ = +110°C, Note 1 , VDRM

NTE6090

Abstract: TO218 package TO3P package
Contextual Info: NTE6090 Silicon Dual Power Rectifier 45V, 30 Amp, TO218/TO3P Description: The NTE6090 is a silicon dual power rectifier in a TO3P/TO218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range