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    NTE270 Search Results

    NTE270 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NTE270
    NTE Electronics Silicon Complementary Transistor Darlington Power Amp, Switch Original PDF 24.67KB 2
    NTE2701
    NTE Electronics TRANS PNP 60V 15A TO220 Original PDF 65.27KB 2
    NTE2708
    NTE Electronics Integrated Circuit NMOS, 8K UV EPROM, 450ns Original PDF 30.63KB 4
    SF Impression Pixel

    NTE270 Price and Stock

    NTE Electronics Inc

    NTE Electronics Inc NTE270

    Transistor NPN Silicon Darlington 100V IC=10A TO-3P Case Complement To NTE271
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NTE270 10
    • 1 -
    • 10 $4.84
    • 100 $3.80
    • 1000 $3.38
    • 10000 $3.17
    Buy Now
    Bristol Electronics NTE270 38 1
    • 1 $6.72
    • 10 $4.37
    • 100 $3.36
    • 1000 $3.36
    • 10000 $3.36
    Buy Now
    Quest Components NTE270 30
    • 1 $9.00
    • 10 $4.50
    • 100 $4.50
    • 1000 $4.50
    • 10000 $4.50
    Buy Now

    NTE Electronics Inc NTE2708

    Memory ICs
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian NTE2708 5
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    NTE270 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    NTE2708

    Abstract: 1702 eprom 1702 eprom programmer 74LS
    Contextual Info: NTE2708 Integrated Circuit NMOS, 8K UV EPROM, 450ns Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon–


    Original
    NTE2708 450ns NTE2708 1702 eprom 1702 eprom programmer 74LS PDF

    NTE270

    Contextual Info: NTE270 NPN & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.


    Original
    NTE270 NTE271 NTE270 PDF

    Contextual Info: NTE270 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)125 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1G h(FE) Max. Current gain.


    Original
    NTE270 PDF

    Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q


    OCR Scan
    NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead PDF

    Contextual Info: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan
    NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD PDF

    NPN S2e

    Abstract: Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp
    Contextual Info: N T E E L E C T R O N I C S INC S2E D • b M B l S S 6} D 0 Q 2 b D l SQ5 * N T E T—33—01 Maximum Breakdown Voltage Maximum CoRector Power Dissipation Watts NTE TVpe Number Polarity and Material Description and Application Case Style Diag. No. Maximum


    OCR Scan
    T0220 T0202 T0202 NTE263) 281MCP NPN S2e Darlington pair pnp npn DARLINGTON 10A NTE281 nte275 NTE280 DARLINGTON darlington low power 268 darlington darlington NPN 50 amp PDF

    a5 gnd

    Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
    Contextual Info: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns


    OCR Scan
    NTE2056 16-Lead NTE2102 350ns NTE2104 200ns NTE2107 22-Lead a5 gnd NTE4164 NTE2117 NTE2164 BB 298 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128 PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Contextual Info: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original
    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF