TO175 Search Results

20L30

Abstract: 4OCPQ lm 2309 D-6380 TO-3P BAY40 8700-35 40CPQ40
Contextual Info: PD-2.309 International 4ocpqoso riQR1Rectifier 40CPQ100 SCHOTTKY RECTIFIER 40 Amp Description/Features Major Ratings and Characteristics Characteristics 40CPQ. Units iF AV> Rectangular waveform 40 A 80/100 V lFSM @tp-5pssine 2950 A VF 0.61 V -55 to175 °C

2SC2782

Abstract: NPN 2SC2782 transistor 2sc2782
Contextual Info: 2SC2782 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC2782 is a12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF power amplifer application up to175 MHz band. PACKAGE STYLE .500 6L FLG A C 1 3 2x Ø N FULL R D FEATURES: 2 • 175 MHz 12.5 V

Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • low phase noise • low pulling • low pushing • aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance

ROS-1750W-619

Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • Low Phase Noise • Low Pulling • Low Pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance

ROS-1750W-619

Abstract: 1202-9 72 PL-012 012F4
Contextual Info: Surface Mount Voltage Controlled Oscillator Wide Band ROS-1750W-619+ 950 to1750 MHz Features • Low phase noise • Low pulling • Low pushing • Aqueous washable CASE STYLE: CK605 PRICE: $ 24.95 ea. QTY 5-49 Applications + RoHS compliant in accordance

h2003

Abstract: H2032 l2032 m2008 h2022 H2023 M2005 M2023 H2004 M2001
Contextual Info: FULL SIZE D.I.L. M2001 thru M2007 L2001 thru L2007 M2021 thru M2023 L2021 thru L2023 M2031 thru M2033 L2031 thru L2033 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C M2008 HALF SIZE D.I.L. H2001 thru H2007 H2021 thru H2023 H2031 thru H2033 Thru-Hole / Gull Wing, 5V

ID84

Abstract: 260uH LZP80N06P
Contextual Info: LZP80N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge BVDSS=60V , • Wide Expanded Safe Operating Area RDS ON =0.014Ω, Application ID=84 A • DC Tools

100V 60A Mosfet

Abstract: mosfet 50v 30a LTP60N10
Contextual Info: LTP60N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits • Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application • DC to DC converter • For high-frequency switching

Contextual Info: 10 to15 Amp D ata Sheet SIN G LE PHASE SILICO N BRIDGE Description Mechanical Dimensions K < * o Features • BUILT-IN INTEGRAL HEAT SIN K ■ UP TO 300 AMP SURGE OVERLOAD RATING B ^ UL RECOGNITION AVAILABLE ■ SMALL PACKAGE Electrical Characteristics @25°C.

Contextual Info: SMALL SIGNAL SWITCHING DIODE YIGUANG 1SS133 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 40 IO mA 110 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25

Contextual Info: LZP50N06P N-Channel 60V Power MOSFET Features: • Avalanche Rugged Technology • Rugged Gate Oxide Technology • High di/dt Capability • Improved Gate Charge • Wide Expanded Safe Operating Area BVDSS=60V , Application RDS ON =0.022Ω, • DC-DC Converters

auto cut off schematic diagram 48v battery charge

Abstract: thyristor battery charger 24v 100a LUCENT LINEAGE J85503B-2 J85503C3 L3 J85503C rectifier j85501a-2 mcs controller LUCENT LINEAGE 2000 J85503C3 Battery charger 48 volt forklift
Contextual Info: Lineage 2000 200-Ampere, 60-Hertz Ferroresonant Rectifier J85503B-2 Product Manual Select Code 169-790-128 Comcode 107666356 Issue 8 January 1999 1999 Lucent Technologies Product Manual J85503B-2 Select Code 169-790-128 Comcode 107666356 Issue 8 January 1999

30ETH06

Abstract: 30ETH06-1 30ETH06S
Contextual Info: Preliminary Data Sheet PD-20748 09/00 30ETH06 30ETH06S 30ETH06-1 Hyperfast Rectifier Features • • • • trr = 40ns IF AV = 30Amp VR = 600V Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 175°C Operating Junction Temperature

Mosfet

Abstract: SSPL7508
Contextual Info: SSPL7508 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 6.25mohm(typ.) ID 120A ① TO-220 Features and Benefits   Marking and Pin Schematic Diagram Assignment Advanced Process Technology Special designed for PWM, load switching and

A1567

Abstract: NDB7060L NDP7060L transistor b35 A-1567
Contextual Info: Na t i o n a I Semiconductor'“ June 1996 NDP7060L/ NDB7060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

25CC

Abstract: TLC2801 TLC2801Y TLC2801Z TLC2801ZD TLC2801ZP
Contextual Info: TLC2801Z, TLC2801Y Advanced LinCMOS LOW-NOISE PRECISION OPERATIONAL AMPLIFIERS _ Low Input Noise Voltage: 35 nV/VRFMax at f = 10 Hz 15 nV/VRFMax at f = 1 kHz S L O S 1 1 6 A -J U L Y 1 9 9 2 -R E V IS E D AUG UST 1994 Low Input Bias Current:

Contextual Info: INTERNATIONAL RECTIFIER L5 E D • 4Û5SM52 0017240 PD-2.330 International SRectifier SD241 SCHOTTKY RECTIFIER 60 Amp Major Ratings and Characteristics Description/Features Characteristics SD241 Units lF AV Rectangular 60 A 35/45 V waveform V RRM The SD241 center tap Schottky rectifier has been optimized

Diode Equivalent 1N4148

Contextual Info: SMALL SIGNAL SWITCHING DIODE YIGUANG 1N4148 1.Dimensions of outlines Unit: mm DO-35 2.Maximum Ratings TYPE NUMBER Symbols Reverse Voltage VR Peak Reverse Voltage VRM V 100 IO mA 100 IFSM A 0.5 Average rectified current, Half wave rectification with Resistive load at TA=25

Mosfet

Abstract: SSPL2015
Contextual Info: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits   Advanced Process Technology Special designed for PWM, load switching and

Mosfet

Abstract: SSPL7509
Contextual Info: SSPL7509 75V N-Channel MOSFET Main Product Characteristics VDSS 75V RDS on 7.2mohm(typ.) ID 75A ① TO-220 Schematic Diagram Assignment Features and Benefits   Marking and Pin Advanced Process Technology Special designed for PWM, load switching and

IRLZ44

Abstract: 250M IRLZ30 IRLZ34 IRLZ40 004I1
Contextual Info: N-CHANNEL LOGIC LEVEL MOSFET IRLZ44/40 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

475 50K 608

Abstract: 1N5118 1b2 zener IN4978 1N5126 1N5135 IN4955 in4962 in4989 1N5120
Contextual Info: 0135157 DDQOfln 0 2ÔE D SEM I CO N C O M P O N E N T S INC T-// - 15 ENER GLASS CASE 4,1 N5968, &1N5118 SERIES FEATURES: DESCRIPTION • Voidless Subminiature Glass Package Semicon’sglasszenerseriesfeatures high tempera­ ture metallurgical bonds and a fused glass passiva­

Contextual Info: THS4521-HT SBOS548C – APRIL 2011 – REVISED DECEMBER 2011 www.ti.com VERY LOW POWER, NEGATIVE RAIL INPUT, RAIL-TO-RAIL OUTPUT, FULLY DIFFERENTIAL AMPLIFIER Check for Samples: THS4521-HT FEATURES 1 • • • • • • • • • • • • Fully Differential Architecture

IRFIZ34

Abstract: IRFIZ30 diode ja8 IRFWZ30 IRFWZ34 JE-8 iz34
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ34/30 IRFIZ34/30 FEATURES D’-PAK • L o w e r R ds <on • • • • • • Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area