IZ34 Search Results

Contextual Info: IRFW/IZ34A A d van ced Power MOSFET FEATURES BV DSS = 60 V ♦ Avalanche Rugged Technology 0.04Î2 ♦ Rugged Gate Oxide Technology ^D S o n - ♦ Lower Input Capacitance In = 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ 175°C Operating Temperature

mosfet 30A

Contextual Info: IRFW/IZ34A A dvanced Power MOSFET FEATURES B V DSS — 6 0 V ♦ Avalanche Rugged Technology ^ D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

G-120 C Mosfet

Contextual Info: IRFW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ~ 0.04 Í2 ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ 175* »Operating Temperature

Contextual Info: IRLW/IZ34A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 30 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175» »Operating Temperature ■ Lower Leakage Current : 10 |iA (Max.) @ VDS = 60V

Contextual Info: IRFW/IZ34A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ ■ ^D S on = 0 0 4 Low«' Input Capacitance Improved Gate Charge Extended Safe Operating Area 175T; Operating Temperature

Contextual Info: IRLW/IZ34A Advanced Power MOSFET FEATURES BVDSS = 16 V Avalanche Rugged Technology RDS on = 0.046 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 30 A Improved Gate Charge Extended Safe Operating Area D2-PAK 175¡ É Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 60V

Contextual Info: IRFW/IZ34A A d van ced Power MOSFET FEATURES B V DSS = 60 V ♦ Avalanche Rugged Technology ^ D S o n - ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance In = 0 .0 4 Q 30 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 175°C Operating Temperature

Contextual Info: $GYDQFHG 3RZHU 026 7 IRFW/IZ34A FEATURES BVDSS = 60 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.04Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 30 A ♦ Extended Safe Operating Area ♦ 175°C Operating Temperature

IRFIZ34

Abstract: IRFIZ30 diode ja8 IRFWZ30 IRFWZ34 JE-8 iz34
Contextual Info: N-CHANNEL POWER MOSFETS IRFWZ34/30 IZ34/30 FEATURES D’-PAK • L o w e r R ds <on • • • • • • Improved Inductive Ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area

QECXXX

Contextual Info: PLASTIC SILICON PHOTODARLINGTON OPTOELECTROmCS QSC133 PA C K A G E DIM ENSIONS d e s c r ip t io n L _ 126 3.20 R EFER ENC E SURFACE .106(2.69) The QSC133 is a silicon photodarlington encapsulated in an infrared transparent, black T-1 package. FE A T U R B t