TO126 MOSFET Search Results
TO126 MOSFET Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| ICL7667MJA |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 |
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| ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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| AM9513ADIB |
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AM9513 - Programmable Timer, 5 Timers, MOS, CDIP40 |
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| CA3130AT/B |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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| CA3130T |
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CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output |
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TO126 MOSFET Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 TO-92 SOT-223 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged |
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OT-223 O-220 O-220F O-251 O-251L QW-R502-579 | |
2n60
Abstract: 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC
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O-220 O-220F O-220F1 O-262 O-251 O-252 QW-R502-053 2n60 2N60G-TN3-R 2N60G UTC2N60 2n60 MOSFEt 2N60 TO-251 UTC | |
UTC2N60L
Abstract: utc 2n60l 2A600V
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2N60L O-220 O-220F 2N60L O-220F1 O-220F2 QW-R502-472 UTC2N60L utc 2n60l 2A600V | |
UTC1N60
Abstract: 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V
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OT-223 O-220 O-220F O-251 O-252 QW-R502-052 UTC1N60 1N60L 1N60GA 1N60G 1N60 mosfet to126 mosfet mosfet 12A 600V | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 DESCRIPTION FEATURES 1 1 TO-220 TO-220F 1 1 * RDS ON =12.5Ω@VGS = 10V. * Ultra Low gate charge (typical 5.0nC) * Low reverse transfer capacitance (CRSS = typical 3.0 pF) |
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OT-223 O-220 O-220F QW-R502-579 | |
12A 650V MOSFET
Abstract: mosfet 30V 12A TO 252
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OT-223 O-220 O-220F O-251 O-252 QW-R502-579 12A 650V MOSFET mosfet 30V 12A TO 252 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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O-220F O-220 O-220F1 O-262 O-252 O-251 QW-R502-053 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET TO-220F 1 1 TO-220F1 TO-262 1 1 TO-251 FEATURES * R DS ON = 5.0Ω @ V GS = 10V * Ultra Low gate charge (typical 9.0nC) * Low reverse transfer capacitance (C RSS = typical 5.0 pF) |
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O-220F O-220F1 O-262 O-251 O-220 QW-R502-370 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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QW-R502-052 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N65 Power MOSFET 1.2A, 650V N-CHANNEL POWER MOSFET 1 1 SOT-223 DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche |
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OT-223 QW-R502-579 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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2N60L 2N60L QW-R502-472 | |
2N60E
Abstract: 600V 2A SOT223 MOSFET N-channel
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2N60-E 2N60-E QW-R502-974 2N60E 600V 2A SOT223 MOSFET N-channel | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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QW-R502-053 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 3N65 Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and |
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QW-R502-590 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F2 SOT-223 DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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O-220F2 OT-223 O-220 O-220F QW-R502-052 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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2N60L 2N60L QW-R502-472 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance |
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QW-R502-053 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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QW-R502-370 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high |
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QW-R502-053 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60-E Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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2N60-E 2N60-E QW-R502-974 | |
1n60Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 1N60 Power MOSFET 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
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QW-R502-052 1n60 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60L Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60L is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche |
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2N60L 2N60L QW-R502-472 | |
2n65 MOSFEt
Abstract: mosfet 2n65 2N65
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QW-R502-370 2n65 MOSFEt mosfet 2n65 2N65 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N60 Power MOSFET 2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged |
Original |
QW-R502-053 | |