TO-39 TRANSISTORS Search Results

92PU51A

Abstract: 2N671 ksd113 0410 2N4355 transistor 2N4033 2N4031 2N4033 2N4037 2N4356
Contextual Info: This PNP Transistors 2N4030 TO-39 60 VCEO VEBO V (V) Min Min 60 5 •ces * ICBO@VcB (nA) (V) Max 50 50 By Its 2N4031 TO-39 TO-39 2N4Û36 TO-39 60 80 90 80 60 80 85 TO-39 60 40 2N4314 TO-39 90 65 5 5 7 7 50 50 50 20 60 50 60 60 10 25 40 30 40 70 100 75 25

BUY82

Abstract: 2N3419 N342 2N3418 2N4036 2N4037 BFX34 BSV60 2N3420 BUX34
Contextual Info: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

2N40361

Abstract: BUX34 N4001 2N3418 2N4036 2N4037 BFX34 BSV60 BSV64 BUY80
Contextual Info: PLANAR SWITCHING PLAN AR SW ITC H IN G T R A N S IS T O R S E LE C T O R C H A R T Devices listed are NPN except where marked with* which signifies PNP. Package TO-39 V ceo 1A 40 2N4037* 60 2N4036* 80 2N4000 100 2 N4001 Volts TO-39 TO-39 TO-39 TO-39 TO-39

BUY80

Abstract: 2N3418 2N3420 2N4036 2N4037 BFX34 BSV60 BSV64 BUX34 BUY90
Contextual Info: PLANAR SWITCHING P LA N A R SW ITCHING T R A N SISTO R S ELECTO R C H A R T Devices listed are N P N except where marked w ith * w hich signifies PN P. Package !c V ceo J O -3 9 TO-39 TO-39 TO-39 TO-39 TO-39 1A 2A 3A 5A 7.5A 10A V olts 40 B S V 60 2N4037*

2N697 equivalent

Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10

transistor bc 138

Abstract: bc 301 transistor transistor Bc 287 bc 303 transistor transistor BC 341 transistor BC 388 TRANSISTOR BC 345 transistor bc 144 transistor BC 310 transistor BC 185
Contextual Info: 6 0 9 1 7 8 8 M I C R O E L E C T R O N I C S criiy» as D E Ït.D 'ilT flfl DODDbSS 82 D 0 0 6 5 5 7 Medium Power Amplifiers and Switches POLARITY M AXIM UM RATINGS CASE BC119 BC 138 BC 139 BC 140 BC 141 N N P N N TO-39 TO-39 TO-39 TO-39 TO-39 800 800 700

BFY52

Abstract: BFY51 BFY50 BFY50-BFY51 BFY50I
Contextual Info: BFY50-BFY51 BFY52 MEDIUM-POWER AMPLIFIERS DESCRIPTION The BFY50, BFY51 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are intended for general purpose linear and switching applications. TO-39 INTERNAL SCHEMATIC DIAGRAM

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

2N5680

Abstract: 2N5679 2N5681 2N5682
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS.

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

VP0808

Abstract: vp0808M
Contextual Info: Brsfconj* VP0808 SERIES P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY BOTTOM VIEW TO-39 TO-205AD PART NUMBER V (BR)DSS r DS(ON) •d (V) (ii) (A) PACKAGE VP0808B -80 5 -0.88 TO-39 VP0808L -80 5 -0.28 TO-92 VP0808M -80 5 -0.31 TO-237 1 SOURCE

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
Contextual Info: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:

BSX62

Abstract: BSX62-10 BSX62-16 BSX63-16 BSX62-6 BSX63 BSX63-10 BSX63-6 bsx6210
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR BSX62, BSX63 TO-39 Metal Can Package NPN SILICON PLANAR TRANSISTORS IN TO-39 PACKAGE. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

VP1008M

Abstract: VP1008
Contextual Info: am sA VP1008 s e rie s P-Channel Enhancement-Mode MOS Transistors PRODUCT SUMMARY PART NUMBER V BR DSS VP1008B -100 VP1008L VP1008M T TO-39 (TO-205AD) BOTTOM VIEW •d (A) PACKAGE 5 -0.79 TO-39 -100 5 -0.28 TO-92 -100 5 -0.31 TO-237 1 SOURCE 2 GATE 3 & CASE-DRAIN

BFW45

Abstract: MPSD52 MPSD02 bfw44 2n5401 2N3114 BFX98 BFS89 BFS90 BFS91 BFT47
Contextual Info: TYPE NO. P O L A R IT Y High Voltage Transistors CASE M A X IM U M R A T IN G S h fe 'c Cob V C E S A T V CE0 Pd (mW) 'c m • Im A I TO-39 TO-39 TO-39 580 800 800 100 100 100 300 140 80 25 30 40 V CER • (V ) min max 'c Im A ) VCE (V ) 50 10 10 max fT

VP0300M

Abstract: VP0300L VP0300B-2 VP0300B VP0300
Contextual Info: VP0300 SERIES P-Channel Enhancement-Mode MOS Transistors HHSüSSÜS PRODUCT SUMMARY PART NUMBER V BR DSS (V) VP0300B -3 0 VP0300L VP0300M BOTTOM VIEW TO-39 (TO-205AD) •d "W (A) PACKAGE 2.5 -1 .2 5 TO -39 -3 0 2.5 -0 .3 2 TO -92 -3 0 2.5 - 0 .5 TO -237 1 SOURCE

2N2222

Abstract: 2N2904 2N2218 2N2219 transistor 2N2475 2N2219 2N2220 2N2221 2N2905 2N2906
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

g371

Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
Contextual Info: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International

2N2477

Abstract: 2N2219 transistor 2N2475 ZT184 2N2218 2N2219 2N2220 2N2221 2N2222 2N2904
Contextual Info: NPN SWITCHING Type V ceo V Max Ir 't, mA Continued Max VcE sat at hFE Switching Times (Max) at fjM in at at Package V !c mA lc Ib Min. Max. !c mA MHz mA mA — TO-39 150 250 20 25* 175* 150 TO-39 2N2904 150 250 20 25* 200* 150 TO-39 2N2905 60 150 250 20 20* 213*

uhf amplifier design BFR90

Abstract: 2N3866 MOTOROLA 2n5160 MRF306 MRF531 2n5583 MOTOROLA 2N5179 MRF905 2n5179 BFR91
Contextual Info: f Device Type ^ Pout Output Power Watts g PE Power Gain dB Min. Vcc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO -39 TO-39 144B-04 145A-07 145A-07 211-10 A 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 207A-01 TO-39 305-01 305A-01

Contextual Info: HE D I 4AS5452 □ Ga'mEM S | Data Sheet No. PD-9.360E INTERNATIONAL RECTIFIER !I “ R I _ INTERNATIONAL RECTIFIER T-39-19 HEXFET TRANSISTORS P-CHANNEL POWER MOSFETs TO-39 PACKAGE -1 0 0 Volt, 0.30 Ohm HEXFET T h e H EXFET® technology is the key to International Rectifier's

BD320C

Abstract: BCX21 BD323 TlPl22 2N6383 BD320 BD321 BD322 BDX33 BDX33A
Contextual Info: DARLINGTONS POWER DARLINGTON SELECTOR CHART T0-220 10A BDX TO-39 2A TO-39 A Package •c o w ÜÔ >> NPN TO-3 10A PNP 40 - - - - 2N6383 45 BCX21 - BDX33 BDX34 - 60 BD320 BD321 BDX33A BDX34A BD322 BD323 TIP120 TIP125 - BDX33B BDX34B TIP121 TIP126 BDX33C BDX34C

2N344Q

Contextual Info: N AMER PHIL IPS/DISCRETE Small Signal Devices 25E D • •>FE m in ^53=131 OOlblTH H ■ ‘f - X l - O l HIGH VOLTAGE TRANSISTORS TYPE PKG BVCEQ • ft »c 1 : v C E sa t @ m ax j . ' • *r . @ | . (M H z> . v i m fiv tc m (m A) TO -39 TO -39 TO -92