TO-253 SILICONIX Search Results

MAR 618 transistor

Contextual Info: Tape and Reel Information Siliconix H B F ØJ E AA QL G A C K ØK D AA SECTION A-A T QUANTITY PER REEL M DPAK ØN L V ØP 2000 D2PAK 800 PLCC-20 SO-8 SO-14 SO-16 SO-24 WB TO-236 (SOT-23) TO-253 (SOT-143) 1000 2500 2500 2500 1500 2500 W TAPE AND REEL OPTIONS FOR SOICĆ8, SOICĆ14, AND SOICĆ16

MAR 618 transistor

Abstract: PLCC-20
Contextual Info: Tape and Reel Information Siliconix H B F ØJ E AA QL G A C K ØK D AA SECTION A-A T QUANTITY PER REEL M DPAK ØN L V ØP 2000 D2PAK 800 PLCC-20 SO-8 SO-14 SO-16 SO-24 WB TO-236 (SOT-23) TO-253 (SOT-143) 1000 2500 2500 2500 1500 2500 W TAPE AND REEL OPTIONS FOR SOICĆ8, SOICĆ14, AND SOICĆ16

IRF252

Abstract: IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 VN5001A
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

Contextual Info: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •    

TO-253 SILICONIX

Contextual Info: SÌ6955DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET Vos (V) ^O S(O M } ( f i) lD (A) 0.085 @ V q S = -1 0 V -30 0.19 @ Vos = "4-5 V 2 Si s o Q TSSOP-8 3i O G2 i} It Top View Ô o, Ô d2 P-Channel MOSFET P-Channel MOSFET SYMBOL LIM IT Drain-Source Voltage

VN66AF equivalent

Abstract: VN67AF equivalent mospower cross vn66af VN66AF 2N6658 IRF540 irf540 equivalent irf540 TTL VN67AF VN88AD
Contextual Info: Siliconix 1-1? f l Pin© MOSPOWER Selector Guide Continued N-Channc4 MOSPOWER (Continued) jopeies aaMOdSOW Device T0-220AB /o V T0-202AA C— IIlt~\1 /// 11 TO-39 1-6 Breakdown Voltage (Volts) rDS(on} (Ohms) Continuous (Amps) 200 200 200 200 200 200 170

3SK121Y

Abstract: 3sk121gr BSV81 3N126 SD2150E 40468a mosfet 2N3796 3N125 mosfet 2N3797 MOTOROLA MPF213
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS M IDSS Max (A) PD Max (W) rDS (on) (Ohms) 9FS Min (S) VGS(th) Clsa t, Max (V) Max (F) Max t8) tf Max TOper (8) (OC) Max Package Style N-Channel Dual-Gate Tetrode, (Cont'd) 5 10 3N211 3N212 3N212 MPF211 MPF212

B1115

Abstract: dg507acj
Contextual Info: Siliconix DG506A/507A A Member of the TEMIC Group Single 16-Channel/Differential 8-Channel CMOS Analog Multiplexers Features Benefits Applications • • • • • • • • • • • • • • • Low On-Resistanee: 240 £2 TTL and CMOS Logic Compatible

DG507AAZ

Contextual Info: Siliconix DG506A/507A A Member of theTEMIC Group Single 16-Channel/Differential 8-Channel CMOS Analog Multiplexers Features Benefits Applications • Low On-Resistance: 240 Q • TTL and CMOS Logic Compatible • Easily Interfaced • Communication Systems

Contextual Info: SiHG70N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg

Contextual Info: Tem ic SÌ6954DQ Se mi c o nd uc t or s Dual N-Channel Enhancement-Mode MOSFET Product Summary V d s V 30 r DS(on) (Œ) I d (A) 0.065 @ VGS= 10 V ±3.9 0.095 @ VGS = 4.5 V ±3.1 d2 q TSSOP-8 3i O l! >| G2 Top View N-Channel M OSFET N-Channel M OSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: Tem ic SÌ9407DY Semiconductors P-Channel Enhancement-Mode MOSFET Product Summary VDs V n>S(on) (£2) 0.150 @ VGS = -10 V 0.240 @ Vos = -4.5 V -60 I d (A) ±3.0 ±2.4 sss in SO-8 'n T mi XI X ID S IX S IX s IX H G [T Top View D DD D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

HA20

Contextual Info: Tem ic siiicoim_ SÌ9936DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (ß ) 30 I d (A) 0.050 @ Vos = 10 V ±5.0 0.080 @ Vos = 4.5 V ±3.9 u D| SO-8 u D, D2 D2 «j i O Si Ô S2 N -C h an n el M O S F E T N -C h an n el M O S F E T

Contextual Info: Tem ic SÌ6552DQ S e m i c o n d u c t o r s Dual N- and P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V ) N-Channel P-Channel I d (A ) rDS(on) (Q ) 20 0.08 @ VGs = 4.5 V ± 2.8 0.11 @ VGs = 2.5 V ± 2.1 0.1 @ VGS = -4 .5 V ± 2.5 0.18 @ V GS = - 2.5 V

DG202BDJ

Abstract: DG201 DG201B DG201BDJ DG202B DG202BDK 202B
Contextual Info: S i fie ó n ix DG201B/202B A M ember of the TEMIC Group Improved Quad CMOS Analog Switches Features Benefits Applications • • • • • • • • • • • • • ± 22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-Resistance—ros oii : 45 Q

Ericsson Installation guide for RBS 6000

Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

594D226X06R3B2T

Abstract: 4700B
Contextual Info: TYPE 594D Solid Tantalum Chip Capacitors TANTAMOUNT , Conformal Terminals, Maximum C/V, Low ESR FEATURES • New extended range offerings. • Conformal construction available in four case codes. B, C and D case codes footprint compatible with EIA molded standard. R case code largest surface mount

IBJT

Abstract: SCR Handbook, General electric AN9319 Rudy Severns 5 hp DC motor speed control using scr d50026 "General Electric SCR Manual" 6th AN918 MOTOROLA 14v 10A mosfet TA84-5
Contextual Info: Harris Semiconductor No. AN9319 Harris Power September 1993 Parallel Operation Of Insulated Gate Transistors Author: Sebald R. Korn, Consulting Applications Engineer that the only part of the bipolar in parallel to the MOSFET and modulation resistance is the base-collector junction, but

Contextual Info: TYPE 591D Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Terminals Maximum C/V, Low ESR FEATURES • Low ESR for low profile power applications. • Low profile .047" [1.2mm] height nominal . • Compatible with 293D molded chip mounting pad layout.

Contextual Info: TYPE 592D Solid Tantalum Chip Capacitors TANTAMOUNT , Low Profile, Conformal Terminals, Maximum C/V FEATURES • New extended range offerings. • New A case size offering. • Low profile .047" [1.2mm] height nominal . • Compatible with 293D molded chip mounting pad layout.

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

IBJT

Abstract: General Electric SCR Manual 6th edition AN9319 TA84-5 "General Electric SCR Manual" 6th Rudy Severns d50026 AN918 MOTOROLA Pelly 7402N
Contextual Info: Parallel Operation Of Insulated Gate Transistors In the November issue of Powertechnics, the general considerations of paralleling semiconIn Application Note C + VBE IMOS RMOD g ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS

transistor bt 808

Abstract: "General Electric SCR Manual" 6th BT thyristor 808 General Electric SCR Manual 6th edition IBJT General Electric SCR components Data Manual TA84-5 AN918 MOTOROLA Severns 7402N
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note bt raleran Of ued te antors utho eyrds ter- C IMOS rpoon, minctor, ache ergy ted, itch wer pes, wer itch - RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS

IBJT

Abstract: "General Electric SCR Manual" 6th 7512 low drop ic General Electric Semiconductor General Electric SCR Manual 6th edition Rudy Severns gto 5A 500V TA84-5 AN918 Paralleling Power MOSFETs in Switching Applications D50026
Contextual Info: Parallel Operation Of Insulated Gate Transistors Application Note C IMOS RMOD g + VBE ITOT + VCE - - + VDS IBJT ITOT = IMOS + IBJT IBJT = βBJTIMOS VBE + IMOSRMOD = VDS e FIGURE 1. N-CHANNEL IGT TRANSISTOR STEADY STATE EQUIVALENT CIRCUIT To understand the unusual behavior of its temperature coefficient, negative at low current, almost zero at normal current,