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    SIHA21N60EF Search Results

    SIHA21N60EF Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SIHA21N60EF-E3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO-220 FP Original PDF 163.15KB
    SIHA21N60EF-GE3
    		Vishay Siliconix N-CHANNEL 600V Original PDF 161.93KB 8
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    SIHA21N60EF Price and Stock

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    Vishay Siliconix SIHA21N60EF-GE3

    N-CHANNEL 600V
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    DigiKey SIHA21N60EF-GE3 Tube 1,953 1
    • 1 $4.76
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    Bristol Electronics SIHA21N60EF-GE3 1,450 2
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    Quest Components () SIHA21N60EF-GE3 1,160
    • 1 $4.20
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    • 1000 $1.82
    • 10000 $1.68
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    SIHA21N60EF-GE3 1,160
    • 1 $4.56
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    • 100 $4.56
    • 1000 $2.28
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    Vishay Siliconix SIHA21N60EF-E3

    MOSFET N-CH 600V 21A TO220
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    DigiKey SIHA21N60EF-E3 Tube 1,000
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    Vishay Intertechnologies SIHA21N60EF-GE3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHA21N60EF-GE3)
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    Avnet Americas SIHA21N60EF-GE3 Reel 22 Weeks 1,000
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    Mouser Electronics SIHA21N60EF-GE3 1,000
    • 1 $4.68
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    TTI SIHA21N60EF-GE3 Reel 1,000
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    Vishay Intertechnologies SIHA21N60EF-E3

    N-CHANNEL 600V - Tape and Reel (Alt: SIHA21N60EF-E3)
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    Avnet Americas SIHA21N60EF-E3 Reel 22 Weeks 1,000
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    Mouser Electronics SIHA21N60EF-E3
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    TTI SIHA21N60EF-E3 Reel 1,000
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    EBV Elektronik SIHA21N60EF-E3 23 Weeks 50
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    Vishay Intertechnologies SIHA21N60EF-GE3 (EF)

    Mosfet, N-Ch, 600V, 21A, 150Deg C, 35W; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.153Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SIHA21N60EF-GE3
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    Newark SIHA21N60EF-GE3 (EF) Bulk 1
    • 1 $5.73
    • 10 $4.41
    • 100 $3.47
    • 1000 $3.07
    • 10000 $3.03
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    SIHA21N60EF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SiHA21N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Fast body diode MOSFET using E series technology • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM): Ron x Qg


    Original     		SiHA21N60EF O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Product Group: Vishay Siliconix, MOSFETs / May 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: philip.zuk@vishay.com New Fast Body Diode N-Channel MOSFETs Improve Reliability, Save Energy in Soft Switching Topologies Product Benefits: •    


    Original     		O-220, O-263, O-220F, O247AD, O-247AC SiHP21N60EF SiHB21N60EF SiHA21N60EF SiHG21N60EF SiHG47N60EF PDF