TO-252 MOSFET Search Results

TB304

Abstract: came
Contextual Info: Harris Semiconductor No. TB304 Harris Power February 1994 Advanced Power Package Construction Method Raises TO-252 Reliability To New Heights This technical backgrounder is intended to show how Harris redesigned the TO-252 surface-mount power package into

SSD15N10

Abstract: MosFET 15N10
Contextual Info: SSD15N10 15A, 100V, RDS ON 110mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION The SSD15N10 provide the designer with the best combination of fast switching. The TO-252 package is

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

Contextual Info: SSD3030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 25 @VGS = -10V G 45 @VGS = -5V -30A -30V S 55 @VGS = -4.5V D FEATURES Super high density cell design for low RDS(ON) . Rugged and reliable. G TO-252 package.

ssd103

Abstract: TO-252 MOSFET p channel
Contextual Info: SSD1030P P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TO-252 RDS(ON) (mΩ) Max D 65 @VGS = - 10V -30V G 115 @VGS = - 5V -15A S D 130 @VGS = - 4.5V FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package.

SSD5030N

Abstract: AIDM-110 South Sea Semiconductor
Contextual Info: SSD5030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 50A TO-252 RDS(ON) (mΩ) Max D 9.5 @VGS = 10V G 19.5 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G TO-252 package. Pb free. S o

CEP50N06

Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223

Linear Regulator sot-89-5

Abstract: APL5902 DIODE CBP Schottky Diode SOT-89 27BSC APL5901 STD-020C
Contextual Info: APL5901/2 Low IQ, Low Dropout 900mA Fixed Voltage Regulator Features Built in Current Limit Protection Controlled Short Circuit Current : 200mA Fast Transient Response Short Setting Time SOT-89, SOT-89-5, SOT-223, SO-8 ,TO-252 and TO-252-5 Packages Lead Free Available RoHS Compliant

Contextual Info: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)

photomos AQV212 smd

Abstract: photomos AQV212 AQV217 AQV210 AQV212 AQV212A AQV214 AQV214H AQV215 AQV215A
Contextual Info: GU PhotoMOS AQV21P, AQV214H (Standard type) VDE TESTING (Reinforced type) GU PhotoMOS (AQV21P, AQV214H) Controls low-level input signals. Controls load voltage 60V to 600V. FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3

AQV214

Abstract: AQV212 smd AQV212A
Contextual Info: Standard type Controls low-level input signals. Controls load voltage 60V to 600V. VDE TESTING (Reinforced type) GU PhotoMOS (AQV21❍, AQV214H) FEATURES 6.4 .252 8.8 .346 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 2 5 3 4 1. Controls low-level analog signals

NAIS 210

Abstract: AQW212A NAIS AQW214 AQW21 AQW212 AQW212A AQW212AX AQW212AZ AQW215 AQW215A
Contextual Info: GU PhotoMOS AQW21❍ Compact DIP (2 Form A) 8-pin type. Controls load voltage 60V to 600V. FEATURES 6.4 .252 3.9 .154 9.78 .385 6.4 .252 3.6 .142 9.78 .385 mm inch 1 8 2 7 3 6 4 5 RoHS Directive compatibility information http://www.nais-e.com/ 1. Compact 8-pin DIP size

Contextual Info: Low on-resistance. Controls load voltage 40V to 400V. DC load type is available. HF PhotoMOS AQV10❍, 20❍ FEATURES 8.8 .346 6.4 .252 3.9 .154 6.4 .252 8.8 .346 3.6 .142 mm inch 1 6 1 6 2 5 2 5 3 4 3 4 (AQV10 series) (AQV20 series) 1. Controls low-level analog signals

Contextual Info: Compact DIP 2 Form A 8-pin type. Controls load voltage 60V to 600V. GU PhotoMOS (AQW21❍) FEATURES 6.4 .252 3.9 .154 9.78 .385 1. Compact 8-pin DIP size The device comes in a compact (W) 6.4 x (L) 9.78 ×(H) 3.9 mm (W) .252×(L) .385×(H) .154 inch, 8-pin DIP size

mosfet 300V 10A

Abstract: M01N60 mosfet 10V 10A n channel mosfet mosfet 10a 600v 2a 400v mosfet to-251 FAST RECOVERY DIODE 10A 400V
Contextual Info: N Channel MOSFET M01N60 1.0A PIN CONFIGURATION TO-251 FEATURE TO-252 Robust High Voltage Temination. Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits

PJ1N60

Contextual Info: PJ1N60 Power Field Effect Transistor T he PJ1N60 Series is a high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage- TO-252 TO-251 blocking capability without degrading performance over time.In addition, this advanced MOSFET is designed to withstand high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET 1 TO-251  FEATURES * RDS ON < 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified  1 TO-252 SYMBOL

CHM3055LAPAGP

Contextual Info: CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CHM3055LAPAGP CURRENT 12 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. D-PAK TO-252 FEATURE

168B

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT50N03 Power MOSFET 45A, 25V N-CHANNEL POWER MOSFET „ 1 FEATURES TO-252 * RDS ON = 14mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified „ 1 SYMBOL TO-251 2.Drain

Contextual Info: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz

Contextual Info: Preliminary Technical Information IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 1000V 1.6A 10Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings 1000

Contextual Info: VND5N07-E OMNIFET II fully autoprotected Power MOSFET Datasheet - production data Description 3 DPAK TO-252 The VND5N07-E is a monolithic device designed using STMicroelectronics VIPower® M0 technology, intended for replacement of standard Power MOSFETs from DC to 50 KHz

IXTP1R6N100D2

Abstract: IXTY1R6N100D2
Contextual Info: IXTY1R6N100D2 IXTA1R6N100D2 IXTP1R6N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 1.6A 10Ω Ω N-Channel TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX Maximum Ratings TO-263 AA (IXTA) 1000 V Continuous ±20

32P05T

Abstract: IXTP32P05T
Contextual Info: IXTY32P05T IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 = = ≤ RDS on P-Channel Enhancement Mode Avalanche Rated - 50V - 32A Ω 39mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50