CJU02N60 Search Results
CJU02N60 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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CJU02N60
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JCET Group | N-channel power MOSFET in TO-252-2L package with 600V drain-source voltage, 2A continuous drain current, 4.4 ohm on-state resistance at 10V gate-source voltage, and high switching speed for power switching and DC/DC converter applications. | Original | ||||
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CJU02N60M1
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JCET Group | N-Channel Power MOSFET CJU02N60M1 in TO-252-2L package with 600V drain-source voltage, 2A continuous drain current, 2.7 ohm on-resistance at 10V gate-source voltage, suitable for high voltage switching applications. | Original |
CJU02N60 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate MOSFETS CJU02N60 N-Channel Power MOSFET TO-252 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading |
Original |
O-252 CJU02N60 O-252 |