TO-251 FOOTPRINT Search Results

07n60c3

Abstract: 07N60
Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge

07n60c2

Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
Contextual Info: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)

Q67040-S4186

Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS Power Semiconductors • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated

infineon 07n60s5

Abstract: 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated

SPU07N60S5

Abstract: Q67040-S4186 07n60s5 infineon 07n60s5
Contextual Info: SPU07N60S5 SPD07N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS(on) 0.6

Contextual Info: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp TO-252 (DPAK) 35 mΩ 12 A 3 2 1 1 TO-251 (IPAK) 40 V 3 1 • Linear current limitation ■

07N60C2

Abstract: 07N60 P-TO252 SDP06S60 SPD07N60C2 SPU07N60C2 Q67040-S4311 smd transistor code 622
Contextual Info: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated

07N60C2

Abstract: Q67040-S4311 A2206
Contextual Info: SPD07N60C2 SPU07N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO-251 and TO-252 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω • Periodic avalanche rated

07N60S5

Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity

AR4100

Abstract: Q67040-S4423
Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated

Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated

07n60c3

Abstract: 07n60c AR4100
Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge RDS(on) 0.6 Ω • Periodic avalanche rated

Contextual Info: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp TO-252 (DPAK) 35 mΩ 12 A 3 1 1 2 TO-251 (IPAK) 40 V 3 1 • Linear current limitation

Contextual Info: SPD07N60C3 SPU07N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary •=Worldwide best RDS on in TO-251 and TO-252 VDS @ Tjmax 650 V • Ultra low gate charge R DS(on) 0.6 Ω •=Periodic avalanche rated

07n60s5

Abstract: SPD07N60S5 SPU07N60S5 Q67040-S4186
Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251

07n60s5

Abstract: TO-251 footprint TO252-3 rthjc SPD07N60S5 SPU07N60S5
Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251

Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252. • Ultra low gate charge • Periodic avalanche rated PG-TO251.

07N60S5

Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated PG-TO251

Contextual Info: SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO-251 and TO-252 VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO252. • Ultra low gate charge • Periodic avalanche rated P-TO251.

TO252

Abstract: VNB14NV04 TO-251 footprint VND14NV04-1 VND14NV04 omnifet ii 7393 D2Pak Package dimensions pulse load calculation formula for single pulse TO-252 MOSFET
Contextual Info: VNB14NV04, VND14NV04 VND14NV04-1, VNS14NV04 "OMNIFET II" fully autoprotected Power MOSFET Features TYPE RDS on VNB14NV04 VND14NV04 VND14NV04-1 VNS14NV04 Ilim 3 Vclamp 1 TO-252 (DPAK) 35 mΩ 12 A 3 2 1 TO-251 (IPAK) 40 V 3 1 SO-8 • Linear current limitation

g4iac5

Abstract: IEEE-472 ac drive schematic
Contextual Info: I/O MODULES G4 DIGITAL AC INPUT DATA SHEET Form 251-010411 Description Opto 22’s G4 AC input modules are used to detect on/off AC voltage levels. Each module provides up to 4,000 Vrms of optical-isolation between field inputs and the logic output of the circuit.

Contextual Info: MK—253—031 —335—220S METAL AirBorn M L -251 -0 3 1 —335—220S (PLASTIC) Board (Narrow Footprint) to Cable .050" 9 thru 100 Contacts Rugged Board Mount MK, ML MM—223—031—21 3-41 00 (METAL) Rugged Cable MN—221 -0 3 1 -2 1 3 - 4 1 0 0 (PLASTIC)

Contextual Info: SIEMENS SPU07N60S5 SPD07N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • W orldw ide best Ros on in TO-251 and TO -252 • Ultra low gate charge • Periodic avalanche proved • Extrem e d v/d t rated • O ptim ized capacitances

Q67040-S4423

Abstract: 07N60 07N60C3 380v SPD07N60C3 SPD07N60 P-TO251-3-1 SDP06S60 SPU07N60C3
Contextual Info: SPD07N60C3 SPU07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 P-TO251-3-1 • Ultra low gate charge P-TO252-3-1