"P-Channel JFETs"
Abstract: 2N5116
Contextual Info: This JFET Transistors Material f P-Channel JFETs National Semiconductor Copyrighted A m Switches BV qss Type No. Case Style By Its 2N5018 TO-18 2N5019 TO-18 2N5114 TO-18 2N5115 TO-18 2N5116 TO-18 Respective J174 J175 J176 J177 P1086 P1087 TO-92 TO-92 TO-92
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tSD113D
T-39-01
"P-Channel JFETs"
2N5116
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BF117
Abstract: BF294 BF178 BF299 BC236 BF174 BF298 BC312 BF120 BF137
Contextual Info: High Voltage Transistors TYPE NO. POLA RITY CASE MAXIMUM RATINGS HFE Pd VCEO IC ICM* VCER* min mai mW (mA) (V) VCE(sat) IC (mA) VCE max (V) (V) IC (mA) fT min (MHz) Cob Cre* max (MHz) BC236 BC285 BC312 BC393 BC394 N N N P N TO-106 TO-18 TO-39 TO-18 TO-18
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BC236
O-106
BC285
BC312
BC393
BC394
BC450
O-92F
BC530
O-92A
BF117
BF294
BF178
BF299
BF174
BF298
BF120
BF137
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n3860
Abstract: 2N2713 2N292 2N2925 2N2711 2N2712 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
n3860
2N292
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2n2712 data sheet
Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Contextual Info: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0
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2N2712
2N2714
2N2923
2N2924
2N2925
2N4289
2N4400
2n2712 data sheet
2N3711 equivalent
2N3904
2n4058
2N2926
2N3393
2N3859A equivalent to PNP
2N2712
2N2714
2N2923
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2N2925
Abstract: 2N3405 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C K A G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3405
n3860
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2N2924
Abstract: 2N3856 2N3404 2N2712 2N2714 2N3856A 2n2923 2N3405 n3860 2N2711
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390 2N3391 NPN NPN NPN NPN NPN 2N3391A 2N3392 2N3393 2N3394
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3856
2N3404
2N3856A
2N3405
n3860
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SUB60N06-18
Abstract: SUP60N06-18
Contextual Info: SUP/SUB60N06-18 N-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) rDS(on) (W) ID (A) 60 0.018 60 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB60N06-18 Top View N-Channel MOSFET SUP60N06-18 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
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SUP/SUB60N06-18
O-220AB
O-263
SUB60N06-18
SUP60N06-18
O-220AB
O-263)
O-263
S-47970--Rev.
08-Jul-96
SUB60N06-18
SUP60N06-18
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u13t1
Abstract: UNITRODE U-66 U13T2 unijunction application note
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEA TU RES DESCRIPTION • • • • • • The Unitrode hermetically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These
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U13T1-U13T2
150nA
u13t1
UNITRODE U-66
U13T2
unijunction application note
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UNITRODE U-66
Abstract: U13T1-U13T2 unijunction application note U13T1 U13T2 U131
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEATURES DESCR IPTIO N • • • • • • The Unitrode herm etically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These
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U13T1-U13T2
150nA
UNITRODE U-66
U13T1-U13T2
unijunction application note
U13T1
U13T2
U131
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P50N06
Abstract: SMP60N06-18 TRANSISTOR p50n06 SMP60N06 C0530 SMP60 siliconix SMP60N06-18
Contextual Info: Tem ic SMP60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ ros on 175 °C Maximum Junction Temperature3 Product Summary V DS (V ) •'DS(on) ( Q ) ID (A ) 60 0.018 60 See lower-cost version: SU P50N06-18 TO-22QAB o ■Jt D R A IN co n n ected to TAB
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SMP60N06-18
18-mQ
P50N06-18
O-22QAB
P-36737--Rev.
P50N06
SMP60N06-18
TRANSISTOR p50n06
SMP60N06
C0530
SMP60
siliconix SMP60N06-18
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ad8657
Abstract: A2N transistor AD8500 AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1
Contextual Info: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 μV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA
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AD8657
CP-8-11
D08804-0-3/11
ad8657
A2N transistor
AD8500
AD8502
AD8505
AD8506
AD8541
AD8542
AD8603
ADA4505-1
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2N3397
Abstract: 2N2925 n3860 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2926
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3397
n3860
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2N2926
Abstract: 2N3859A 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type b v CEO @ 10m A V hFE V M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN NPN NPN
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3859A
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BSY95A
Abstract: BSY95
Contextual Info: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol
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BSY95A
100mA
100mA
BSY95A
BSY95
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2N9860
Abstract: 2N3869 2N3880 2N3856 n3860 transistor 2N3 2N2711 2N2712 2N3858 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N9860
2N3869
2N3880
2N3856
n3860
transistor 2N3
2N3858
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2N3877
Abstract: 2n3877a GES6220 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3877
2n3877a
GES6220
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TRANSISTOR 2n3901
Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
TRANSISTOR 2n3901
2N390 pnp
2N3901
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2n3901 equivalent
Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2n3901 equivalent
2N3900 pnp
2N3900 pnp transistor
2n3900
2N3392 equivalent
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PDF
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2N3643
Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3643
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PDF
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2N3402
Abstract: 2n3404 2N3405 2N3403 2N3638 N3404 2N2711 2N2712 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (SAT) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N3402
2n3404
2N3405
2N3403
2N3638
N3404
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PDF
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2N2712 advanced
Abstract: 2N2926 equivalent 2N3405 2N2924 equivalent 2N2925 equivalent 2N3404 2N3416 equivalent n3860 2N2713 2N2714
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V M in.-M ax. @ I c , V c e (V) (V) Max. @ 2N2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
2N2712 advanced
2N2926 equivalent
2N3405
2N2924 equivalent
2N2925 equivalent
2N3404
2N3416 equivalent
n3860
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PDF
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T4 3570
Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390
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OCR Scan
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2N2711
2N2712
2N2713
2N2714
2N2923
2N2924
2N2925
2N2926
2N3390
2N3391
T4 3570
transistor t4 3570
transistor 2n2712
2N3900
2N2646
2N3405
n3860
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PDF
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2N2222A
Abstract: J 2N2222A Transistor 2N2222A 2N2222A npn transistor 2N2221A 2N2221A-2N2222A BR 2N2222A NPN 2N222 2n2222a transistor Metal 2n2222a
Contextual Info: 2N2221A, 2N2222A NPN Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching mox.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings
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OCR Scan
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2N2221A,
2N2222A
2N2222A
2N2221A
J 2N2222A
Transistor 2N2222A
2N2222A npn transistor
2N2221A-2N2222A
BR 2N2222A NPN
2N222
2n2222a transistor
Metal 2n2222a
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2sc 9015
Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
Contextual Info: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K
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OCR Scan
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BC107
O-106
O-92B
-26UNF-2A
O-48D
2sc 9015
2SC644
CS9015
9014n
BC 945
transistor BC 945
2N4248
BC267
2SC828
2sc828a
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