TO-18 TRANSISTOR Search Results

u13t1

Abstract: UNITRODE U-66 U13T2 unijunction application note
Contextual Info: U13T1-U13T2 PUTs Planar, TO-18 Hermetic FEA TU RES DESCRIPTION • • • • • • The Unitrode hermetically sealed TO-18 metal can series of programmable unijunction transistors feature blocking voltages to 100V, the highest available to designers. These

ad8657

Abstract: A2N transistor AD8500 AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1
Contextual Info: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 μV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA

BSY95A

Abstract: BSY95
Contextual Info: BSY95A NPN Silicon Epitaxial Planar Transistor for general purpose switching applications max.0.50 Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings Symbol

TRANSISTOR 2n3901

Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390

2n3901 equivalent

Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN

2N3643

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

T4 3570

Abstract: transistor t4 3570 2N2712 transistor 2n2712 2N2711 2N2713 2N3900 2N2646 2N3405 n3860
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390

2N2222 circuit

Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
Contextual Info: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

2N2907A

Abstract: 2N2906A
Contextual Info: 2N2906A, 2N2907A PNP Silicon Epitaxial Planar Transistors with high cutoff frequency, for high speed switching Metal case JEDEC TO-18 18 A 3 according to DIN 41 876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

BC260

Contextual Info: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case

2N3662

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

TO-18 amps pnp transistor

Abstract: BC107 BC108
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-18 PACKAGE DEVICE TYPE V ceo sus VOLTS (max) AMPS TO-18 T0206AA 2N2906 2N2906AA 2N2907 2N2907AA 2N3250AA 2N3251AA 2N3496 2N3497 2N3798 2N3799 2N3962 2N3963 2N3964 2N3965 2N4026 2N4027 2N4028 2N4029

BC394

Contextual Info: BC394 EPITAXIAL PLANAR NPN • HIGH VOLTAGE AMPLIFIER DESCRIPTION The BC394 is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case, designed for general purpose high-voltage and video amplifier applications. TO-18 INTERNAL SCHEMATIC DIAGRAM

2n3901 equivalent

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (S A T ) hFE M in .-M a x . @ I c , V c e (V) 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390

Contextual Info: Photo transistors KODENSHI ST-1MLA・ST-1MLB DIMENSIONS Unit : mm The ST-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 Type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type

2N697 equivalent

Abstract: 2N1711 equivalent 2N2219A BSX45 2N1711 MOTOROLA 2N3914 2N1711 DH3467CD N2904A BFY39 BFY50 equivalent
Contextual Info: Discrete Devices Transistors Cont. European “Pro Electron” Types (Cont.) Near Equivalent Near Equivalent Polarity Pkg. Type BFX30 BFX37 BFX65 BFX84 BFX85 2 N2904A 2N2605* 2N2605* 2N1711 2N171-1 PNP PNP PNP NPN NPN TO-39 T O -18 T O -18 TO-39 TO-39 BSX45-10

CY7C1370DV25-167BZI

Contextual Info: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

CY7C1370DV25-167BZI

Contextual Info: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Functional Description Features • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: 5 V 18-Bit nanoDAC in a SOT-23 AD5680 FEATURES FUNCTIONAL BLOCK DIAGRAM VREF Single 18-bit nanoDAC 18-bit monotonic 12-bit accuracy guaranteed Tiny 8-lead SOT-23 package Power-on reset to zero scale/midscale 4.5 V to 5.5 V power supply Serial interface Rail-to-rail operation

SMP60N06-18 power mosfet

Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
Contextual Info: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View

CY7C1382DV33-200BZI

Contextual Info: CY7C1380DV33 CY7C1382DV33 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM Features Functional Description • Supports bus operation up to 200 MHz ■ Available speed grades is 200 MHz ■ Registered inputs and outputs for pipelined operation

AD8500

Abstract: AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1 ADA4505-2 TO-18 amps pnp transistor
Contextual Info: Micropower, RRIO, CMOS, 18 V Operational Amplifier AD8546 PIN CONFIGURATION Micropower at high voltage 18 V : 22 µA max Low input bias current: 20 pA max Gain bandwidth product: 200 kHz Slew rate: 70 V/ms Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V