TO-18 TRANSISTOR Search Results

ad8657

Abstract: A2N transistor AD8500 AD8502 AD8505 AD8506 AD8541 AD8542 AD8603 ADA4505-1
Contextual Info: 18 V, Precision, Micropower CMOS RRIO Operational Amplifier AD8657 PIN CONFIGURATION Micropower at high voltage 18 V : 18 A typical Low offset voltage: 350 μV maximum Single-supply operation: 2.7 V to 18 V Dual-supply operation: ±1.35 V to ±9 V Low input bias current: 20 pA

TRANSISTOR 2n3901

Abstract: 2N390 pnp 2N3901 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PA C KA G E b v CEO Device Type @ 10mA V V C E (S A T ) hFE Min.-Max. @ I c , V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N2924 2N2925 2N2926 2N3390

2n3901 equivalent

Abstract: 2N3900 pnp 2N3900 pnp transistor 2n3900 2N3392 equivalent 2N2711 2N2712 2N2713 2N2714 2N2923
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V CE (SAT) hFE M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391 NPN

2N3643

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10mA V V CE (S A T ) hFE Min.-Max. @ I c ,V c e (V) (V) Max. @ 2N2711 2N2712 2N2713 2N2714 2N2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 30-90 75-225 30-90 75-225 90-180 ‘

2N2222 circuit

Abstract: 2N2222 npn 2N2222 2n2222 test circuit 2N2222 base capacitance
Contextual Info: 2N2222 NPN Silicon Epitaxial Planar Transistor with high cutoff frequency, for high speed switching mox.0.5^ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case Weight approximately 0.35 g Dimensions in mm Absolute Maximum Ratings

BC260

Contextual Info: BC260 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications The transistor is subdivided into three groups A, B and C according to its DC current gain. m ax .0.5 $ Metal case JEDEC TO-18 18 A 3 according to DIN 41876 Collector connected to case

2N3662

Abstract: 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924 2N2925 2N2926 2N3390
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE b v CEO Device Type @ 10m A V V C E (SA T ) hF E M in.-M ax. @ I c , V 2N 2711 2N 2712 2N 2713 2N 2714 2N 2923 NPN NPN NPN NPN NPN 18“ 18 18 18 25 2N 2924 2N 2925 2N 2926 2N 3390 2N3391

Contextual Info: Photo transistors KODENSHI ST-1MLA・ST-1MLB DIMENSIONS Unit : mm The ST-1MLA and 1MLB are high-sensitivity NPN silicon phototransistors mounted in TO-18 Type header with clear epoxy encapsulation. The phototransistors have a wide angular response and relatively low-cost compared to TO-18 can type

CY7C1370DV25-167BZI

Contextual Info: CY7C1370DV25 CY7C1372DV25 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Functional Description Features • Pin-compatible and functionally equivalent to ZBT™

Contextual Info: CY7C1370D, CY7C1372D 18-Mbit 512 K x 36/1 M × 18 Pipelined SRAM with NoBL Architecture 18-Mbit (512 K × 36/1 M × 18) Pipelined SRAM with NoBL™ Architecture Features Functional Description • Pin-compatible and functionally equivalent to ZBT™

SMP60N06-18 power mosfet

Abstract: SMP60N06-18 sup50n06-18 SUP50N06 D 1437 transistor
Contextual Info: Tem ic SMP60N06-18 S em i co n d u c t or s N-Channel Enhancement-Mode Transistor, 18-mQ ros on Product Summary VDS (V) 60 VIS Id (A) r DS(on) ( ^ ) 0.018 60 See lower-cost version: SUP50N06-18 D Q T0-220AB o cJi DRAIN connected to TAB Ö s GD S Top View

FC940L

Abstract: FC940LVB MPC940L
Contextual Info: Revised January 1999 FC940L Low Voltage 1 to 18 Clock Distribution Device with Selectable PECL or LVTTL Input General Description Features The FC940L is a 1 to 18 low voltage clock fanout buffer. The device allows for the selection of either differential PECL or LVTTL/CMOS input levels. The 18 outputs are

3N163

Abstract: 3N164
Contextual Info: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18

2n706 transistor

Abstract: transistor 2n706 2n2222 2N2222AA 2N706 2n2222 jan 03150 transistor transistor 2N2222 2N708 2N718
Contextual Info: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 sus VOLTS Ic (max) AMPS 2N706 15 0.05 2N708 15 - 2N718 40h 0.5 2N718AA 50 2N720A VcEO PACKAGE TO-18 T0206AA DEVICE TYPE @ It/ ^ CE min/max @ mA/V 1*FE c<je fx p (MHz) 20@10/1 0.6@10/1 6 200 30-120@10/l

2SK118

Abstract: SK118
Contextual Info: TO SH IB A 2SK1 18 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 1 18 GENERAL PURPOSE AND IMPEDANCE CONVERTER AND CONDENSER MICROPHONE APPLICATIONS Unit in mm 4.2 MAX. • High Breakdown Voltage VGDS = - 5 0 V • High Input Impedance

MRA - MFE823

Abstract: MFE823
Contextual Info: SILICONIX INC lflE D Ô5S473S O G m O H T MFE823 7 • CX'Sificonix incorporated 'T -Z l-X 'B P-Channel Enhancem ent-M ode M OS Transistor PRODUCT SUMMARY PART NUMBER V BR DSS (V) (m S) ■d (mA) PACKAGE -2 5 1 -3 0 TO-18 9(3 BOTTOM VIEW TO-18 MFE823 Performance Curves: MRA (See Section 7)

bcw 94 b

Abstract: BF-139 F 540 NS BSY54 BCW95B BSY55
Contextual Info: CB 76 (CB 6} (CB 7) Silicon NPN transistors, general purpose (continued) Tamb= 25 °C Transistors N P N silicium , usage générai (suite) (mW) VCEO (V) h21 E VCER* h21E V c E X a min max F 139 Bc F 139 B<> F 139 B TO 18 TO 18 540 540 540 330 330 40 60 60

2n706 transistor

Abstract: transistor 2n706 2n2222 jan 2N706 2N706 JAN
Contextual Info: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL NPN TRANSISTOR TO-18 ^C E O PACKAGE DEVICE TYPE sus VOLTS Ic (max) AMPS @ IC/ ^ C E min/max @ mA/V hpE VcE(jat) @ It/Iß v@ mA/mA TO-18 T0206AA < i\ C<p P (MHz) ÌT 20@ 10/1 0.6@10/1 6 200 30-120@10/l 0.4@10/1 6 300

SMW60N06-18

Abstract: smw60n06
Contextual Info: Tem ic SMW60N06-18 Siliconix N-Channel Enhancement-Mode Transistor, 18-mQ rDS on Product Summary V(BR)DSS (V ) r DS(on) ( Q ) ID (A) 60 0.018 60 TO-247AD Ô s N-Channel M OSFET Absolute Maximum Ratings (Tc = 25°C Unless Otherwise Noted) Symbol Limit Drain-Source Voltage

Contextual Info: AVANTEK INC M4E f AVA D AVANTEK PPA-18232 Surface Mount Cascadable Amplifier 2 to 18 GHz APPLICATIONS FEATURES V* JL_ • Space Program — Wideband Receiver • Portable or Compact Radar Systems • ECM Systems Amplifier ' • Frequency Rangé; 2 to 18 GHz

18-A

Abstract: PTV05020 PTV05020W PTV05020WAH SR-332 TMS320 Murata EVC
Contextual Info: PTV05020W www.ti.com SLTS232C – JANUARY 2005 – REVISED DECEMBER 2007 18-A, 5-V INPUT NONISOLATED WIDE-OUTPUT ADJUST SIP MODULE FEATURES APPLICATIONS • Up to 18-A Output Current • 5-V Input Bus • Wide-Output Voltage Adjust 0.8 V to 3.6 V • Efficiencies up to 96%

Contextual Info: CY29940 2.5 V or 3.3 V, 200-MHz, 1:18 Clock Distribution Buffer 2.5 V or 3.3 V, 200-MHz, 1:18 Clock Distribution Buffer Features Description • 200-MHz clock support ■ LVPECL or LVCMOS/LVTTL clock input ■ LVCMOS/LVTTL compatible inputs ■ 18 clock outputs: drive up to 36 clock lines

Contextual Info: A art. no. 17,8 22 K/W 1 20 B 45 7 9,8 9 18 Ø 3,6 Heatsinks for transistors in plastic case TO 220 FK 227 SA L 1 4,3 art. no. C 1 Ø 3,7 36,6 9,5 45 18 12 K/W 20 TO 220 FK 238 SA L 1 material: aluminium surface: black anodised 12,2 10,2 4 19,3 art. no. D