TO 220 GATE DRAIN Search Results

TO-220

Abstract: TO247 FULLPAK TO-247 TO220
Contextual Info: TO-220 FullPak and TO-247 Leadform Options TO-220 FullPak Leadform Options Lead Assignments 1 - Gate 2 - Drain 3 - Source Internet: http://www.irf.com All dimensions in millimetres inches 3 TO-220 FullPak and TO-247 Leadform Options TO-220 FullPak Leadform Options cont’d

LEADFORM

Abstract: 9840 0642 8801 221-837
Contextual Info: TO-220 FullPak and TO-247 Leadform Options TO-247 Leadform Options Lead Assignments 1 - Gate 2 - Drain 3 - Source Internet: http://www.irf.com All dimensions in millimetres inches 5 TO-220 FullPak and TO-247 Leadform Options TO-247 Leadform Options Lead Assignments

Contextual Info: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.)

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF730 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF840 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF640 MOSFET N-Channel FEATURES z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement TO-220 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF630 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate MOSFETS IRF730 MOSFET N-Channel FEATURES TO-220 z Dynamic dv/dt Rating z Repetitive Avalanche Rated z Fast Switching z Ease of Paralleling z Simple Drive Requirement 1. GATE 2. DRAIN

Contextual Info: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 1 2 3 TO-220

P40NF10

Abstract: STP40NF10 d1 marking code dpak transistor p40nf S2180
Contextual Info: STP40NF10 N-channel 100 V, 0.025 Ω, 50 A TO-220 low gate charge STripFET II Power MOSFET Features Order code VDSS RDS on max. ID STP40NF10 100 V < 0.028 Ω 50 A • Exceptional dv/dt capability ■ Low gate charge ■ 100% avalanche tested 3 1 2 TO-220

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors CJP75N80 N-Channel Power MOSFET TO-220 General Description The CJ75N80 uses advanced trench technology and design to Provide excellent RDS on with low gate charge. Good stability and

DIODE B12

Abstract: B12 DIODE MOSFET 800V 3A MOSFET 800V 15A DIODE B12 41 MOSFET 50V 100A TO-220 DIODE B12 48 diode 800v DIODE B12 45 N-channel Power MOSFET
Contextual Info: TSM3N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 800 4.2 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N80 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This

TSM4N60CH

Abstract: power mosfet 600v 18BSC ITO-220
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

DIODE F10

Abstract: TSM4N60CZ TO-252 N-channel MOSFET
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

A12 diode

Abstract: MOSFET 900V TO-220 MOSFET 50V 100A TO-220 power mosfet 900v
Contextual Info: TSM3N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 900 5.1 @ VGS =10V 1.5 General Description TO-251 (IPAK) The TSM3N90 TO-252 (DPAK) N-Channel Power MOSFET is produced by new advance planar process. This

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

ITO-220

Abstract: TSM4N60CH
Contextual Info: TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been

Contextual Info: Outline drawings Dimensions in mm and inches 1 mm = 0.0394" 1 TO-251 AA TO-252 AA (D PAK) TO-220 AB TO-220 AC Vf". J J ] r •» r ^ T f ' ' | j1 -■ 1 - IV ■ ' " 1. 2. 3. 4. Gate Dram Source Drain Sack heatsink Millimeter din. Max. 2.19 0.89 2.38 1.14

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

TSM4NB60CP

Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This

mosfet "marking code 44"

Abstract: TSM2NB60CP
Contextual Info: TSM2NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 4.4 @ VGS =10V 1 General Description TO-251 (IPAK) The TSM2NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This