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    TSM4NB60CP Search Results

    TSM4NB60CP Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TSM4NB60CP
    		Taiwan Semiconductor 600V, 4A, SINGLE N-CHANNEL POWER Original PDF 898.36KB 11
    TSM4NB60CP ROG
    		Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 600V 4A TO252 Original PDF 842.73KB
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    TSM4NB60CP Price and Stock

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    Taiwan Semiconductor TSM4NB60CP-ROG

    MOSFET N-CHANNEL 600V 4A TO252
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    DigiKey () TSM4NB60CP-ROG Digi-Reel 4,998 1
    • 1 $1.03
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    TSM4NB60CP-ROG Cut Tape 4,998 1
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    TSM4NB60CP-ROG Reel 2,500 2,500
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    Taiwan Semiconductor TSM4NB60CP

    600V, 4A, SINGLE N-CHANNEL POWER
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    DigiKey TSM4NB60CP Reel 5,000
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    Taiwan Semiconductor TSM4NB60CP ROG

    - Tape and Reel (Alt: TSM4NB60CP ROG)
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    Avnet Americas TSM4NB60CP ROG Reel 20 Weeks 5,000
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    Mouser Electronics TSM4NB60CP ROG 3,226
    • 1 $1.01
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    Verical () TSM4NB60CP ROG 30,000 2,500
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    TSM4NB60CP ROG 15,000 5,000
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    TME TSM4NB60CP ROG 1
    • 1 $0.94
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    Avnet Asia TSM4NB60CP ROG 20 Weeks 5,000
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    IBS Electronics TSM4NB60CP ROG 5,000
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    TSC Electronics Ltd TSM4NB60CPROG

    N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    ComSIT USA TSM4NB60CPROG 5,000
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    TSM4NB60CP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 PDF

    Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252 PDF

    TSM4NB60CP

    Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252 TSM4NB60CP PDF

    DIODE D12

    Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 DIODE D12 PDF

    mosfet Marking Code b3

    Abstract: diode c12 marking c12
    Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		TSM4NB60 O-220 ITO-220 O-251 O-252 TSM4NB60 TSM4NB60CH TSM4NB60CP TSM4NB60CZ O-251 mosfet Marking Code b3 diode c12 marking c12 PDF

    Contextual Info: TSM4NB60 600V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 4 General Description TO-251 (IPAK) The TSM4NB60 N-Channel Power MOSFET is TO-252 (DPAK) produced by new advance planar process. This


    Original     		TSM4NB60 O-220 ITO-220 O-251 TSM4NB60 O-252 PDF

    TSM4NB60CP

    Abstract: 600v 4A mosfet
    Contextual Info: Preliminary TSM4NB60 600V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 600 2.5 @ VGS =10V 2 General Description The TSM4NB60 N-Channel Power MOSFET is produced by new advance planar process. This advanced


    Original     		TSM4NB60 O-251 O-252 TSM4NB60CH 75pcs TSM4NB60CP 600v 4A mosfet PDF