FULLPAK Search Results

Contextual Info: Package Reliability www.vishay.com Vishay Siliconix ENVIRONMENTAL AND PACKAGE TESTING DATA FOR TO-220 FullPAK STRESS SAMPLE SIZE DEVICE HR./CYC CONDITION TOTAL FAILS 85/85 625 504 668 85 °C, 85 % RH FAIL PERCENTAGE 0.00 HAST 1090 109 000 130 C, 85 % RH

IR E78996

Abstract: I2147 2s2002 16TTS 16TTS08FP 16TTS12FP 16TTS16FP SCR TO-220 16TTS08
Contextual Info: Preliminary Data Sheet I2147 rev. C 03/99 SAFEIR Series 16TTS.FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 16TTS.FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology

Contextual Info: Bulletin I2195 Rev A. 05/06 SAFEIR Series 10ETS.FPPbF INPUT RECTIFIER DIODE TO-220 FULLPAK VF < 1.1V @ 10A Lead-Free "PbF" suffix IFSM = 200A VRRM = 800 -1200V Description/ Features The 10ETS12FPPbF rectifier SAFEIR series has been optimized for very low forward

Contextual Info: Bulletin I2200 rev. A 09/05 SAFEIR Series 25TTS12FPPbF PHASE CONTROL SCR TO-220 FULLPAK VT Lead-Free "PbF" suffix < 1.25V @ 16A ITSM = 200A VRRM = 1200V Description/ Features The 25TTS12FPPbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium

i2142

Contextual Info: Preliminary Data Sheet I2142 rev. A 03/99 SAFEIR Series 10ETS.FP INPUT RECTIFIER DIODE TO-220 FULLPAK VF < 1.1V @ 10A IFSM = 200A VRRM 800 to 1600V The 10ETS.FP rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass

IRFIB7N50A

Abstract: SiHFIB7N50A IRFB11N50A SiHFB11N50A SiHFIB7N50A-E3 transistor irfib7n50a
Contextual Info: IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single Available RoHS* COMPLIANT APPLICATIONS D TO-220 FULLPAK • Low Gate Charge Qg Results in Simple Drive

IRFI9634G

Abstract: SiHFI9634G SiHFI9634G-E3
Contextual Info: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK DESCRIPTION Third generation Power MOSFETs from Vishay provide the

Contextual Info: IRFI530G Power MOSFET TO-220 FULLPAK D FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS t = 60 s; f = 60 Hz • Sink to Lead Creepage Distance = 4.8 mm • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance

IR E78996

Abstract: E78996 scr 25TTS 25TTS08FP 25TTS12FP 25TTS16FP
Contextual Info: Bulletin I2135 rev. D 03/99 SAFEIR Series 25TTS.FP PHASE CONTROL SCR TO-220 FULLPAK Description/Features The 25TTS.FP SAFE IR series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology

6r125p

Abstract: transistor 6R125P DF 331 TRANSISTOR transistor df 331 IPA60R125CP CA82 JESD22 PG-TO220-3-31 SP000095275 6R125
Contextual Info: IPA60R125CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R DS,on in TO220 Fullpak 650 0.125 Ω R DS on ,max • Ultra low gate charge V Q g,typ 53 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications

IR E78996

Abstract: E78996 10ETS 10ETS12FP
Contextual Info: Bulletin I2195 Rev A. 05/06 SAFEIR Series 10ETS.FPPbF INPUT RECTIFIER DIODE TO-220 FULLPAK VF < 1.1V @ 10A Lead-Free "PbF" suffix IFSM = 200A VRRM = 800 -1200V Description/ Features The 10ETS12FPPbF rectifier SAFEIR series has been optimized for very low forward

IR E78996

Abstract: E78996 20ETS 20ETS08FP 20ETS12FP 20ETS16FP rectifier bridge 800V
Contextual Info: Bulletin I2134 rev. C 03/99 SAFEIR Series 20ETS.FP INPUT RECTIFIER DIODE TO-220 FULLPAK VF < 1V @ 10A IFSM = 300A VRRM 800 to 1600V Description/Features The 20ETS.FP rectifier SAFE IR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

D15E65D2

Abstract: IDV15E65D2
Contextual Info: Diode RapidSwitchingEmitterControlledDiode IDV15E65D2 FullPAKwithEmitterControlledDiode Datasheet IndustrialPowerControl IDV15E65D2 EmitterControlledDiode RapidSwitchingEmitterControlledDiode  Features: A •

Contextual Info: IRFI840GLC, SiHFI840GLC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.85 Qg (Max.) (nC) 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single D TO-220 FULLPAK Ultra Low Gate Charge Reduced Gate Drive Requirement

Contextual Info: Bulletin I2200 12/04 SAFEIR Series 25TTS12FPPbF PHASE CONTROL SCR TO-220 FULLPAK VT Lead-Free "PbF" suffix < 1.25V @ 16A ITSM = 300A VRRM = 1200V Description/ Features The 25TTS12FPPbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium

221C

Contextual Info: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO–220 FULLPAK CASE 221C–02 ISSUE D DATE 01/02/2000 SCALE 1:1 –T– –B– F SEATING PLANE C S P N E DIM A B C D E F G H J K L N P Q R S Z A Q H 1 2 3 –Y– K Z J L R G D 3 PL 0.25 0.010 STYLE 1: PIN 1. BASE

TO220 package infineon

Abstract: IDV03S60C IDV06S60C idv02s60c
Contextual Info: Product Brief SiC Schottky Diodes thinQ! Second Generation now available in TO-220 FullPAK High efficiency and thermal performance combine in a full isolated solution The new FullPAK solution combines the high electrical performance standards of Infineon second generation SiC Schottky diodes and the advantages of a full

Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D TO-220 FULLPAK

E78996

Abstract: IR E78996 irf e78996 E78996 datasheet bridge 10ETS12FP 10ETS marking code r07
Contextual Info: Bulletin I2195 12/04 SAFEIR Series 10ETS12FPPbF INPUT RECTIFIER DIODE TO-220 FULLPAK VF < 1.1V @ 10A Lead-Free "PbF" suffix IFSM = 200A VRRM = 1200V Description/ Features The 10ETS12FPPbF rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The

IRFI530

Abstract: IRFI840 IRFIP450 TO-247 FULLPAK Package IRFIP244
Contextual Info: HEXFET International ül ]Rectifier Power MOSFETs FullPak N-Channel New Product FullPak Fully-isolated HEXFETs International Rectifier is proud to introduce its FullPak line of fullyisolated power MOSFETs. Available in popular-sized package outlines, these devices are designed to provide ease of use, lower costs of

irfib7n50a

Abstract: 4.5v to 100v input regulator SiHFIB7N50A
Contextual Info: IRFIB7N50A, SiHFIB7N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 500 RDS(on) (Ω) VGS = 10 V 0.52 Qg (Max.) (nC) 52 Qgs (nC) 13 Qgd (nC) 18 Configuration Single Available RoHS* COMPLIANT APPLICATIONS D TO-220 FULLPAK • Low Gate Charge Qg Results in Simple Drive

20ETS

Abstract: 20ETS08FP 20ETS12FP 20ETS16FP 442 rectifier
Contextual Info: Bulletin I2134 rev. B 11/97 SAFEIR Series 20ETS.FP INPUT RECTIFIER DIODE TO-220 FULLPAK VF < 1V @ 10A IFSM = 300A Description/Features VRRM 800 to 1600V The 20ETS.FP rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

IRFI9634G

Abstract: SiHFI9634G SiHFI9634G-E3
Contextual Info: IRFI9634G, SiHFI9634G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • - 250 RDS(on) (Ω) VGS = - 10 V 1.0 Qg (Max.) (nC) 38 Qgs (nC) 8.0 Qgd (nC) 18 Configuration Single S TO-220 FULLPAK Advanced Process Technology

25TTS12FP

Abstract: scr c 106 m 25tts12fppbf
Contextual Info: Bulletin I2200 rev. A 09/05 SAFEIR Series 25TTS12FPPbF PHASE CONTROL SCR TO-220 FULLPAK VT Lead-Free "PbF" suffix < 1.25V @ 16A ITSM = 200A VRRM = 1200V Description/ Features The 25TTS12FPPbF SAFEIR series of silicon controlled rectifiers are specifically designed for medium