SIHF30N60E Search Results
SIHF30N60E Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIHF30N60E-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220 | Original | 8 | |||
| SIHF30N60E-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 29A TO220 | Original | 8 | 
SIHF30N60E Price and Stock
Vishay Siliconix SIHF30N60E-GE3MOSFET N-CH 600V 29A TO220 | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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SIHF30N60E-GE3 | Tube | 2,575 | 1 | 
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SIHF30N60E-GE3 | 350 | 2 | 
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SIHF30N60E-GE3 | 280 | 
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Vishay Intertechnologies SIHF30N60E-E3- Tape and Reel (Alt: SIHF30N60E-E3) | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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SIHF30N60E-E3 | Reel | 12 Weeks | 1,000 | 
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SIHF30N60E-E3 | 
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SIHF30N60E-E3 | 13 Weeks | 50 | 
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Vishay Intertechnologies SIHF30N60E-GE3- Tape and Reel (Alt: SIHF30N60E-GE3) | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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SIHF30N60E-GE3 | Reel | 12 Weeks | 1,000 | 
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Buy Now | |||||
 
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SIHF30N60E-GE3 | 1,007 | 
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Buy Now | |||||||
 
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SIHF30N60E-GE3 | Tube | 10,000 | 50 | 
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Buy Now | |||||
 
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SIHF30N60E-GE3 | 1 | 
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Get Quote | |||||||
 
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SIHF30N60E-GE3 | 13 Weeks | 50 | 
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Buy Now | ||||||
 
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SIHF30N60E-GE3 | 1,000 | 
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Buy Now | |||||||
Vishay Intertechnologies SIHF30N60EE3POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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SIHF30N60EE3 | 1,900 | 
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Get Quote | |||||||
Vishay Intertechnologies SIHF30N60EGE3POWER MOSFET Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
 
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SIHF30N60EGE3 | 1,000 | 
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Get Quote | |||||||
SIHF30N60E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low figure-of-merit (FOM) Ron x Qg  | 
 Original  | 
SiHF30N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg  | 
 Original  | 
SiHF30N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single COMPLIANT •  | 
 Original  | 
SiHF30N60E 2002/95/EC O-220 11-Mar-11 | |
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) 0.125 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single D TO-220 FULLPAK  | 
 Original  | 
SiHF30N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg  | 
 Original  | 
SiHF30N60E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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 Contextual Info: SiHF30N60E_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter  | 
 Original  | 
SiHF30N60E AN609, 0977m 5445m 6306m 8691m 10-Feb-15 | |
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Generation Two  | 
 Original  | 
SiHF30N60E 2002/95/EC O-220 11-Mar-11 | |
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 Contextual Info: SiHF30N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • 650 RDS(on) max. at 25 °C () VGS = 10 V 0.125 Qg max. (nC) 130 Qgs (nC) 15 Qgd (nC) 39 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg  | 
 Original  | 
SiHF30N60E O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
TO-247 FULLPAK Package
Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E 
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enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 
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 Original  | 
Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |