TSM10N80CI Search Results
TSM10N80CI Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TSM10N80CI C0G |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 9.5A ITO220 | Original | 527.9KB |
TSM10N80CI Price and Stock
Taiwan Semiconductor TSM10N80CI-C0GMOSFET N-CH 800V 9.5A ITO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM10N80CI-C0G | Tube | 4,000 |
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Taiwan Semiconductor TSM10N80CI C0G- Rail/Tube (Alt: TSM10N80CI C0G) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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TSM10N80CI C0G | Tube | 4,000 |
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TSM10N80CI C0G | 1 |
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TSM10N80CI Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit VDS 800 V RDS on (max) 1.05 Ω Qg 53 nC Features Block Diagram ● Low RDS(ON) 1.05Ω (Max.) ● Low gate charge typical @ 53nC (Typ.) |
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TSM10N80 O-220 ITO-220 50pcs TSM10N80CZ TSM10N80CI 900ppm | |
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Contextual Info: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS |
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TSM10N80 O-220 ITO-220 TSM10N80 | |
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Contextual Info: TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 1.05 @ VGS =10V ID (A) 9.5 General Description The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS |
Original |
TSM10N80 O-220 ITO-220 TSM10N80 |