TN47 Search Results

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: 1N4728A thru 1N4764A PLASTIC M icro sem i Corp. ' T u e dioap expels SC O T T S D A L E , A Z / For more information call: / ( 602 941-6300 SILICON 1 WATT ZEN ER DIO DES FEATURES • 3 .3 THRU 100 VOLT VOLTAGE RANGE • HIGH SURGE CURRENT RATING • HIGHER VOLTAGES AVAILABLE. SEE 1EZ SERIES

RC32300

Abstract: tiB-61 IDT RC32334 Users Manual PIO-12 MIPS32 RC32 RC32332 RC32364 TN-47
Contextual Info: Technical Note TN-47 Compatibility Between RC32334/ RC32332 and RC32364/RC32134 Based Solutions 1RWHV By Ian Ferguson ,QWU ,QWURGXFWLRQ Integrated Device Technology has developed a series of RISC processors to target embedded communications applications. All implement the MIPS Instruction Set Architecture ISA . One of these devices, the

XC9572XL-TQ100

Abstract: plx vhdl code transistor smd bc rn 100LVEL14 PCI9054-AA50PI vhdl code digital cross connector cPCI 2mm PAD60CIR36D xc9572xl pin configuration SMD TN12
Contextual Info: PM5372 PRELIMINARY REFERENCE DESIGN PMC-1991247 ISSUE 1 TSE REFERENCE DESIGN PM5372 TSE TRANSMISSION SWITCHING ELEMENT CORE CARD REFERENCE DESIGN PRELIMINARY ISSUE 1: MARCH 2000 PROPRIETARY AND CONFIDENTIAL TO PMC-SIERRA, INC., AND FOR ITS CUSTOMERS’ INTERNAL USE

micron DDR2 pcb layout

Abstract: Micron TN-47-01 TN-47-01 ps1010 DDR2 layout guidelines DDR2 DIMM DDR2-533 ddr2 controller tdv and tdqsq signal path designer
Contextual Info: TN-47-01 DDR2 DESIGN GUIDE FOR TWO-DIMM SYSTEMS Overview Technical Note DDR2-533 Memory Design Guide for Two-DIMM Unbuffered Systems Overview DDR2 memory busses vary depending on the intended market for the finished product. Some products must support four or more registered DIMMs, while some are point-topoint topologies. This document focuses on solutions requiring two unbuffered DIMMs

micron memory model for ddr3

Abstract: ADP3182 DDR2-667 DDR3-1333 HIP6311 micron resistor tn4722
Contextual Info: TN-47-22: Designing for LV FBDIMMs Introduction Technical Note Designing for 1.5V, Low-Power FBDIMMs Introduction Today’s memory power usage may have an adverse effect on the overall system level power and server cooling requirements. This document discusses memory power

TN-47-14

Contextual Info: TN-47-14: DDR2 tCKE Power-Down Introduction Technical Note DDR2 tCKE Power-Down Requirement Introduction In DDR2 SDRAM devices, power-down occurs when CKE is registered LOW with a DESELECT or NOP command. However, unlike DDR SDRAM, power-down entry and exit in

jesd79f

Abstract: UG388 MT41J256M8xx-187E 8 XC6SLX9 MT41J256M8xx-187E ddr3 ram slot pin detail MT41J64M16xx-187E micron DDR3 pcb layout MT41K128M8 Spartan-6 LX45
Contextual Info: Spartan-6 FPGA Memory Controller User Guide UG388 v2.3 August 9, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

KTT-381127-5-1A

Abstract: electronic component identification X0640 X12106 101-T1K-10 hw101 NC-254097-10-9 M2541 1318p m5330
Contextual Info: Label ID Products THERMAL TRANSFER LABELS WP White Polyester . . . . . . . . . . . . . . . . .80 CP Clear Polyester . . . . . . . . . . . . . . . . . .82 HW HighTack White Polyester . . . . . .84 HM High Tack Metalized Polyester . .86 MP Metalized Polyester . . . . . . . . . . . . .88

MO-45

Abstract: S6 77A Mo45
Contextual Info: CLD-1020 00 o o i— CO w in o V T ^ à à ò _J _J _J o o o 33 O w conco co rtco co co co co co co co n w w ^T j'T f^^^^L O co 'j'^ifi^^io

cp clare reed relay

Abstract: ECG transistor replacement guide book free sip 1A05 12V 40W Fluorescent Lamp Driver circuit Diagram CP Clare Prme 15002 cp clare u prma 2a05 REED RELAY 15005 LSR2C05 CLARE REED RELAY PRMA 1a24 clare prme 15005
Contextual Info: SECTIONS CP Clare Company Overview 1 Product Selection Guide 2 Advanced Magnetic Products 3 Circuit Products 4 Reed Relay Products 5 Switch and Sensor Products 6 Surge Protection Products 7 Glossary 8 Index by Part Number 9 www.cpclare.com iii TABLE OF CONTENTS

Xilinx spartan xc3s400_ft256

Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
Contextual Info: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,

Micron Technology

Contextual Info: Micron DRAM Products Overview August 2013 John Quigley – Micron FAE 2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and

MIL-M-87958

Abstract: X0640 BMS-13-47 lms9000 T612M-DS MV203 snap on tools for electronic BMS13-47 RT-1805 CR-107
Contextual Info: C O N T E N T S WIRE AND HARNESS ID P R O D U C T S 2 Heat Shrink/Cable Markers Performance Labels Self-Laminating Labels Pre-Printed Wire & Cable Markers LABEL ID PRODUCTS 64 Product Code Cross Reference Thermal Transfer Labels Dot Matrix Labels Laser Labels

TN4702

Abstract: DDR2-400 DDR2-533 DDR2-667 DDR2-800 ACT B5 TN-47-02
Contextual Info: TN-47-02 DDR2 Offers New Features/Functionality Introduction Technical Note DDR2 Offers New Features and Functionality Introduction DDR2 SDRAM introduces features and functions that go beyond the DDR SDRAM specification and enable DDR2 to operate at data rates of 800MHz and above. The advancements of DDR2 are largely the result of changes in DRAM architecture and signaling, as

Cyclic Redundancy Check simulation

Abstract: Micron FBDIMM Channel Utilization DDR2-667 PC2-5300 AMB 633
Contextual Info: TN-47-21: FBDIMM – Channel Utilization Bandwidth and Power Introduction Technical Note FBDIMM – Channel Utilization (Bandwidth and Power) Introduction Memory architectures are shifting from stub bus technology to high-speed linking. The traditional stub bus works well for slower devices, but has several limitations when

DDR2 routing Tree

Abstract: SODIMM ddr2 micron resistor raw card DDR2 SODIMM raw card b RCD Components PC2-3200 PC2-6400 RCD module
Contextual Info: TN-47-17: DDR2 SODIMM Optimized Address/Command Nets Introduction Technical Note DDR2 SODIMM Optimized Address/Command Nets Introduction DDR2 small-outline dual in-line memory modules SODIMMs have several basic module configurations and a number of complex topologies. Operating speeds range from

IN939

Abstract: 1n4771 1N4770 1N4770A 1N4771A 1N4772 1N4772A 1N4773 1N4773A 1N943
Contextual Info: a> ro OUICK REFERENCE GUIDE MICROSEMI VOLTAGE REFERENCE TC DIODES Test Current l7T mA 62 62 75 ?5 DO-7/DO-35 DO-7/DO-35 6 3 75 DO-7 Operating Temperature Range, °C - 55 to * 100 - 5 5 to - 100 0.002%/°C 0.005% °C 0.01%/ C Case Type Type Number A VZ MV

PE148A

Abstract: SFJ450B PE155S SFU450C SFU470B HT150S Uniden scanner HT30FR BN148A HT164A
Contextual Info: Sigflex Phone & Radio Antennas Portable Radio Antennas How often have you seen bent or broken antennas on phones or radios? W ere these instruments still working? Cushcraft has solved the problem by developing the Sigflex portable antenna. W hether you're making cellular calls from your home or trekking through the brush,

MT41K128M

Abstract: MT41K256 MT41J256M8xx-187E MT41K128 jesd79f MT41J64M16xx-187E MT41J256M8xx-187E 8 MT46V32M16xx-5B-IT mcb DATASHEET UG416
Contextual Info: Spartan-6 FPGA Memory Controller User Guide UG388 v2.1 March 4, 2010 Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development of designs to operate with Xilinx hardware devices. You may not reproduce, distribute, republish, download, display, post, or transmit the

TF-450

Abstract: TF-459 TF-474 TF-435 TF-438 TF-492 tN494 TF480 TF-429 tf423
Contextual Info: NARROWBAND SP4T SWITCH REFLECTIVE AND ABSORPTIVE 0.02-18 GHz SERIES TF-4/TN-4-A GENERAL INFORMATION: Series TF-4 and TN-4-A narrowband switches are medium power devices that operate over commonly used frequency ranges. Carefully selected diodes placed in either series, serles-shunt, or shunt configurations pro­

Contextual Info: 340 Gbps STS-1 Time Slot Interchange Switch Features • Monitors cross-connect program memory integrity • 136 x 136 time slot interchange TSI switch with non-blocking, 6528 × 6528, Synchronous Transport Signal level 1 (STS-1) switch matrix yields 340 Gigabits

DDR3 pcb layout

Abstract: DDR2 sdram pcb layout guidelines DDR2 pcb layout DDR3 pcb layout guide DDR3 jedec DDR3 sodimm pcb layout dimm pcb layout JESD8-15A DDR3 DIMM 240 pin names DDR3 layout
Contextual Info: Section II. Board Layout Guidelines 101 Innovation Drive San Jose, CA 95134 www.altera.com EMI_PLAN_BOARD-2.0 Document Version: Document Date: 2.0 July 2010 Copyright 2010 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other

TL 434

Abstract: ITT 434 Cannon connectors TB-417-ASD RD1100 cannon 25 pin connector ITT Cannon ITT DIODE TB-412-HASD TB-415-HARD
Contextual Info: NARROWBAND SP4T DIODE SWITCH SERIES TN/TB/TL-400 REFLECTIVE AND ABSORPTIVE 0.1–18 GHz GENERAL SPECIFICATIONS Frequency Coverage: RF Impedance: RF Power: DC Requirements: Temperature Information: Switching Speed: Connectors: 0.1 to 18.0 GHz. 50 OHMS. +20 dBm operational.