TN431 Search Results

TN4037

Abstract: TN4036 TN4234 TN4235 TN4236 TN4314 TN636 TN638
Contextual Info: Electrical C h aracte ristics Ta=25°C, U n le ss O therw ise Specified M axim um R a tin g s Type No. TN4036 TN4037 TN4234 TN4235 TN4236 TN4314 Min Min Min Pd (W) eïc=25°c 90 65 7 0.75 ^œo ^CEO ^EBO (V) (V) (V) 60 40 60 • 80 90 40 40 60 80 7 7 7 7

Contextual Info: TO-237 PLASTIC PACKAGE TRANSISTORS NPN M a x im u m R a tin g s Type No. TN4036 TN4037 TN4234 TN4235 TN4236 TN4314 E le c tric a l C h a ra c te r is tic s (Ta=25°C, U n le s s O th e rw ise S p ecified ) V CBO ^CEO ^EBO 'c m 'cBO ^CB (V) Min (V) Min PD

T1P42C

Contextual Info: TO-220 PIN CONFIGURATION 1. BASE 2 . COLLECTOR 3. EMITTER 4. COLLECTOR c DIM E ,01 0 -I A B C D E F G H J K L M N 3 G MIN MAX 14,42 9,63 3,56 16.51 10,67 4,83 0,90 1,40 3,88 2,79 3,43 0,56 14,73 6,35 2,92 - 1,15 3,75 2,29 2,54 12,70 - 2,03 - 7 31,24 DEG TO-220 Power Package Transistors NPN

b0416

Abstract: TO-202AC
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 ~~~;:~ 2SB1044M 2SB1044M 2SB731 2SB734 2SBll15 2SBl115 BFX38 2N3779 ~~~~gA BOT30A BOT30A TIP30A 2N4899 2N3775 2SA547 TN4235 2N4235 2N3740A BFS92 BSP31 TN4030 2SB954 B0240A BCP52 BCX52 ~g~~~A

ksd113

Abstract: NSDU57 NSD6181 2N4355 2N4354 2N6726 2N6727 MPSA92 151a100 MPSW92
Contextual Info: PNP Transistors V cbo V Min v CEO (V) Min Vebo (V) Min 2N4030 TO-39 60 60 5 2N4031 TO-39 80 60 80 60 5 5 50 50 50 50 60 50 TO-39 80 80 5 50 60 also Avail. JA N /T X /V Versions 2N4036 TO-39 90 85 TO-39 60 40 2N4314 TO-39 90 65 7 20 60 10 25 40 30 40 70 100

G25CW

Abstract: CIL10
Contextual Info: cm tq^ pljwsic cr*oc Maxinlum Rfitings Type No. Electrical Characteristics Ta=25”C, Unless Otherwise Specified wCE(SAT) vv BE|S«T) a 'c c* 'c (V) S (V) 0 (mA) (pF) (MHz) (mA) Max Min Max Typ Max Min Typ Max KoH) (ns) Max COIl Case Style 'c ^ceo V EBO

2N6706

Abstract: 2n6730 tn2905 CSC1573 MPSW13 2N6705 2N6707 2N6711 cil916 2N6713
Contextual Info: TO-237 DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 1,14 12,70 5.DEG MAX 5,33 5,20 4,19 0,55 0,50 0,55 1,40 2,54 - A L L DIM EN SIO N S A R E IN M.M. L L PIN CONFIGURATION AVAILABLE IN TO-237 CDIL Code Style 3 TO-237 PIN 1 PIN 2 PIN 3 Emitter Base

NSDU51

Abstract: D43C8 NSD6181 0410 2N4234 2N6726 2N6727 92PU51 92PU51A D41D1
Contextual Info: NATL SEMICOND DISCRETE S5E D • bSG113Q 0G377fl7 5 ■ T '21-0t PNP Medium Power Transistors by Ascending Vceo Part No. Vceo \»l Max (mA/V) V « (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237

TN431

Abstract: TN-457 tn464 TN-490-HA TN414 TN-421 TN-451 tn461 TN-473 TN415
Contextual Info: NARROWBAND SP 4 T S W IT C H S E R IE S TN-4/TN-4HA HIGH ISOLATION-REFLECTIVE AND ABSORPTIVE 0.02-18 GHz, GENERAL INFORMATION: Series TN-4 and TN-4-HA switches are medium power devices that oper­ ate over commonly used frequency ranges. Carefully selected diodes

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

D43C8

Abstract: nsd6181 NSDU51
Contextual Info: NATL SEflICOND DISCRETE E2E D • bS D113Q 0037767 5 ■ T-27-0/ PNP Medium Power Transistors by Ascending Vce0 Part No. Max (m A /V) Vce (sat) (V) Max 150 300 10/1 100/1 100/2 100/2 1A/1 500/1 0.5 0.5 0.5 0.5 0.7 0.7 1000 1A 500 500 1000 1000 TO-237 TO-237

92PU51A

Abstract: 2N671 ksd113 0410 2N4355 transistor 2N4033 2N4031 2N4033 2N4037 2N4356
Contextual Info: This PNP Transistors 2N4030 TO-39 60 VCEO VEBO V (V) Min Min 60 5 •ces * ICBO@VcB (nA) (V) Max 50 50 By Its 2N4031 TO-39 TO-39 2N4Û36 TO-39 60 80 90 80 60 80 85 TO-39 60 40 2N4314 TO-39 90 65 5 5 7 7 50 50 50 20 60 50 60 60 10 25 40 30 40 70 100 75 25