TN2524 Search Results

25SI

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling

TN2524

Contextual Info: TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TC8220

Abstract: sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215
Contextual Info: Selector Guide Ultrasound MOSFETs Ultrasound MOSFETs, Arrays and Drivers Device BVDSS V RDS(ON) (Ω) CISS (typ pF) VGS(TH) (max V) Package Options TN2425 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3)

tn2520

Abstract: p-channel 200V TN2524 P024 TN2520ND TN2524N8 TN2524ND
Contextual Info: TN2520/TN2524 TN2520 TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* DICE 200V 6Ω 2.0V 1.0A — TN2520ND 240V 6Ω 2.0V 1.0A TN2524N8

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: T N 25C Lji Supertex inc. L ow T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) BVtcs (max) (max) TO-243AA* DICE 200V 60 2.0V 1.0A — TN2520ND 240V 60 2.0V 1.0A TN2524N8 TN2524ND

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 240V 6.0Q. 2.0V 1.0A T N 2524N 8 T N 2524N D * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels,

tn5cw

Abstract: TN2524 TN5C fet sot-89 marking code mos die TN2524N8-G TN2524ND
Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

tn5cw

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

tn5c

Abstract: TN2524 TN2524N8 TN2524ND marking Tn5C
Contextual Info: TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† 240V 6.0Ω 2.0V 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TN2524N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

TN2524

Contextual Info: Supertex inc. TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

tn5cw

Abstract: tn5c FET SOT-89 FET SOT-89 N-Channel fet sot-89 marking code fet sot-89 product marking TN2524 TN2524N8-G TN2524ND MARKING CODE BV sot-89
Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

MOSFET P-channel SOT-23

Abstract: P-Channel MOSFET 12V SOT 23 sot-23 P-Channel MOSFET ultrasound an-H53 MOSFET P channel SOT-23 p-channel mosfet complementary MOSFET sot89 K6 12V TN2524
Contextual Info: Selector Guide Ultrasound MOSFETs, Arrays and Drivers Ultrasound MOSFETs CISS VGS TH (Ω) typ (pF) 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3) BVDSS RDS(ON) (V) TN2425 Device Package Options max

tn5c

Abstract: marking Tn5C TN5C SOT89 TN2524 TN2524N8 TN2524ND TN25
Contextual Info: TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† 240V 6.0Ω 2.0V 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

TN2524

Abstract: TN2524N8 TN2524ND
Contextual Info: TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information * Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† 240V 6.0Ω 2.0V 1.0A TN2524N8 TN2524ND Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: _ S j/ / r ZJ r* r f ^ Ir !r , — — — a— m m m m tß iwitfuwi | T N 2520 T N 25 24 » N -C han nel E n h an c em e n t-M o d e V ertical D M O S FETs Ordering Information bv dss/ Order Number / Package ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min)

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

TN0604N3

Abstract: HV5808 VQ1000 VP2210 HV50530 HV5708 TP0606N3 VP0635N5 VQ1001 replacement 2N6659 supertex
Contextual Info: Supertex Inc. OBSOLETE PRODUCT LIST Updated 12/13/02 Obsolete Part # Pkg Suggested Replacement Same pkg Suggested Replacement - Sim. Elec. (If same pkg alt is not close) Drop-In Alt Status 2N6659 VN2210N2 TN0104N3 obs 2N7007 TN5325N3 - obs AN0332 CG -

power supply 220v 12v diagram

Abstract: zero voltage switching adjustable ramp BAS21 HV441 HV441PJ TN2524N8 TP2522N8 OPamp 60V high power pulse generator with mosfet 220V ac to 12V dc circuit diagram
Contextual Info: HV441 Demo Kit Available High-Voltage Ring Generator Ordering Information Operating Voltage Package Options VPP1 - VNN1 44-Pin PLCC 220V HV441PJ Features General Description ❏ 220V maximum operating voltage The Supertex HV441 is a monolithic integrated circuit capable of