TN25 Search Results

Contextual Info: TN2510 Su pertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVuss / BVoas Rds on (max) V oS(lh) (max) *D(ON) (min) 100V 1.5ft 2.0V 3.0A Order Number / Package TO-243AA* Diet TN2510N8 TN2510ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

25SI

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Contextual Info: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8

TN25L

Contextual Info: ^ Supertex me. T N 25 L Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information B Vdss / ^DS O N ^G S fth ) • d (ON) b v dgs (max) (max) (min) 20V 1.0Q 1.6V 4.0 A 40V 1.0CÌ 1.6V 4.0A Order Number / Package TO-243AA* — TN2504N8

Contextual Info: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*

Contextual Info: ^ TN2502 Supertex ine. TN2504 Low T hresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss/ ^D S O N ^ G S (th | I d (ON) b v dgs (max) (max) (min) TO-243AA* DICEt 20V 1.0Q 1.6V 4.0A — TN2502ND 40V 1.0Q

TN2504

Contextual Info: TN2504 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2504 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TN2535

Contextual Info: TN2535 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2535 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

SCR 25A 600V

Abstract: TN25 SCR TN 22 1500
Contextual Info: TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 to 1000 V G K A A IGT 40 mA K A G K DESCRIPTION D2PAK (TN25-G) The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN25 and TYNx25 Series 25A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT RMS 25 A VDRM/VRRM 600 to 1000 V G K A A IGT 40 mA K A G K DESCRIPTION D2PAK (TN25-G) The TYN / TN25 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a

Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device

RCM4000

Contextual Info: TN255 Rabbit 4000 Advanced 16-bit Mode Auxiliary I/O Bug A bug has recently been identified in the Rabbit 4000 that can result in inadvertently executing a data byte as if it were an instruction under certain circumstances. This will only occur when the advanced 16-bit

fet sot-89 marking code

Abstract: FET SOT-89 N-Channel tn5l fet sot-89 product marking MARKING CODE BV sot-89 TN2504
Contextual Info: TN2504 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TN2535

Abstract: TN2535N8
Contextual Info: TN2535 TN2535 Low Threshold New Product N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) Order Number / Package 350V 10Ω 2.0V 1.0A TN2535N8 * Same as SOT-89. TO-243AA* Product supplied on 2000 piece carrier tape reels.

p-channel DMOS

Abstract: P024 TN2502ND TN2504 TN2504ND TP2502N8
Contextual Info: TN2502/TN2504 TN2502 TN2504 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON VGS(th) ID(ON) BVDGS (max) (max) (min) TO-243AA* DICE† 20V 1.0Ω 1.6V 4.0A — TN2502ND 40V 1.0Ω 1.6V 4.0A

TL25/15/10 3E6

Abstract: PHILIPS toroidal core 3f3 PHILIPS toroidal core 3c90 PHILIPS toroidal core TN25/15/10- 3e25 TL25/15/10 toroid core Toroid 3F3 philips 3E25 philips 3f3 ferrite ring ferrite core
Contextual Info: Philips Components Product specification Ferrite ring cores toroids TN25/15/10 RING CORES (TOROIDS) Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.23 mm−1 Ve effective volume 2944 mm3 Ie effective length 60.2 mm Ae effective area

Contextual Info: TN254 Rabbit RIO Clocked Serial Bug A bug has been identified in the original lot of Rabbit RIO chips that makes it difficult for the SPI and three-wire serial interfaces to recover from noise on the clock line. This bug does not affect the Rabbit RIO Chip when it is operating in either the Parallel or the RabbitNet modes.

TN2540-800G

Abstract: 7478 j k
Contextual Info: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

TN2529

Contextual Info: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TN2524

Contextual Info: TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si