TN254 Search Results

Contextual Info: T N 25D Lji Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering information BVDSS/ Order Number / Package f*DS ON ^ G S (th ) ' d (ON) (max) (max) (min) TO-243AA* DICE+ 350V 120 1.8V 1.0A — TN2535ND 400V 12£i 1.8V 1.0A TN2540N8

Contextual Info: TN254 Rabbit RIO Clocked Serial Bug A bug has been identified in the original lot of Rabbit RIO chips that makes it difficult for the SPI and three-wire serial interfaces to recover from noise on the clock line. This bug does not affect the Rabbit RIO Chip when it is operating in either the Parallel or the RabbitNet modes.

TN2540-800G

Abstract: 7478 j k
Contextual Info: TN2540, TXN625 TYN625, TYN825 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 800 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

TN2540

Contextual Info: TN2540 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2540 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: TN2535 TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d ss/ ^DS ON ^GS(th) ^D(ON) b v dgs (max) (max) (min) TO-243AA* DICE+ 350V 12Q 1.8V 1.0A — TN2535ND 400V 12Q 1.8V 1.0A TN2540N8 TN2540ND

Contextual Info: Supertex inc. N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► TN2540 General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance

TN2540

Contextual Info: Supertex inc. TN2540 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2540 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

8A SOT-89

Abstract: P024 TN2535 TN2535ND TN2540 TN2540N8 TN2540ND
Contextual Info: TN2535/TN2540 TN2535 TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* DICE† 350V 12Ω 1.8V 1.0A — TN2535ND 400V 12Ω 1.8V 1.0A

Contextual Info: TN2540 Low Threshold Su pertex inc. N-Channel Enhancement-Mode Vertical DMOS FETs b v dss / R DS ON ^GS(th) B V uqs (max) (max) If Ordering Information 400V 12£1 2.0V 1.0A Order Number / Package TO-92 TO-243AA* Diet TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage

TN2540ND

Abstract: fet sot-89 marking code 125OC TN2540 TN2540N3-G TN2540N8-G
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► The Supertex TN2540 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

marking code tn5d

Abstract: tn5d TO-243AA TN2540 TN2540N3 TN2540N8 TN2540ND marking tn5d
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 400V 12Ω 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. †

TN2540

Abstract: TN2540N3 TN2540N8 TN2540ND
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 400V 12Ω 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. †

Contextual Info: TN2540N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)570m @Temp (øC)150õ IDM Max (@25øC Amb)1.8 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

TYN825

Abstract: TYN825RG TO-220AB footprint TYN1225 TXN625 TN2540-800G tyn1225rg TYN625RG TYN625 scr tyn825
Contextual Info: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

Contextual Info: TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

TYN1225

Abstract: scr tyn825 txn625 tyn825 Tyn625
Contextual Info: TN2540, TXN625 TYN625, TYN825, TYN1225 Standard 25 A SCRs Features A • On-state rms current, IT RMS 25 A ■ Repetitive peak off-state voltage, VDRM/VRRM 600 to 1200 V G K ■ Triggering gate current, IGT 40 mA ■ Insulated package TO-220AB ins – Insulating voltage 2500 V rms

Contextual Info: TN2540 Supertex inc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-92 TO-243AA* Diet 400V 12£2 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND

SCR 106 B

Abstract: 800G TN2540 TN2540-G TN2540-600G
Contextual Info: TN2540-G SCR FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY A DESCRIPTION A The TN2540 series of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This SCR is designed for power supplies up to

TN2540

Abstract: TN2540N3-G TN2540N8-G TN2540ND tn5d MARKING CODE BV sot-89
Contextual Info: TN2540 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

tn5d

Abstract: TN2540 TN2540N3 TN2540N8 TN2540ND
Contextual Info: TN2540 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-92 TO-243AA* Die† 400V 12Ω 2.0V 1.0A TN2540N3 TN2540N8 TN2540ND * Same as SOT-89. †

VP1304N2

Abstract: TP2540ND VN1304N3 VP3203N3 LND150N8 VN3205N5 VN1310N3 TN2510N8 TN0102N2 VP1306N2
Contextual Info: _ _ fflpSupertex inc. Device Page # Device Page # Device A lp h a n u m e ric Index Page # Device Page# 2N7002 BSS123 DN2535N2 DN2535N3 DN2535N5 20 24 28 28 28 TN2106K1 TN2106N3 TN2124K1 TN2501N8 TN2501ND 57 57 61 63 63 TP2504ND TP2506ND TP2510N8 TP2510ND

Backlight Drivers

Abstract: P271 tp0610 TN2105 HV9123 Ring generator HV9112 LCD shutter
Contextual Info: Market Solutions Listing Telecom/Networking Solutions Hotswap/lnrush Current Limiter/Circuit Breaker ICs HV300/HV310 HV301/HV311 HV302/HV312 HV100/HV101 Off-Line Bias Supplies, High Voltage Linear Regulators LR6 LR7 SR036 SR037 LR8 HV9904 AC/DC, DC/DC Converters PWM ICs

Contextual Info: TN2535 I Ljà Supertex. inc. I l L J U U 254° W Lr Low Thresh old N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ ^DS ON ^GS(th) l[)(ON) b v dgs (max) (max) (min) 350V 12a 1.8V 400V 12Q 1.8 V Order Number / Package TO-243AA*