TN2529 Search Results
TN2529 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
---|---|---|---|---|---|---|---|
TN2529 | Supertex | Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET | Original | 511.42KB | 4 | ||
TN2529K6-G | Supertex | Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET | Original | 511.43KB | 4 |
TN2529 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device |
Original |
TN2529 TN2529 125pF DSFP-TN2529 A091608 | |
TN2529Contextual Info: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si |
Original |
TN2529 TN2529 A020309 | |
125OC
Abstract: TN2529 TN2529K6-G
|
Original |
TN2529 TN2529 125pF DSFP-TN2529 NR061107 125OC TN2529K6-G | |
Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate |
Original |
TN2529 125pF DSFP-TN2529 A111407 | |
125OC
Abstract: TN2529 TN2529K6-G
|
Original |
TN2529 TN2529 125pF DSFP-TN2529 A091608 125OC TN2529K6-G | |
TN2529Contextual Info: Supertex inc. TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description |
Original |
TN2529 TN2529 A031610 | |
TO243AA
Abstract: TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB
|
Original |
2N7000-G 2N7002-G DN1509N8-G DN2470K4-G DN2530N3-G DN2530N8-G DN2535N3-G DN2535N5-G DN2540N3-G DN2540N5-G TO243AA TO-243AA tn0604n TO-236AB oc sot-89 TC2320TG TN2130K1-G LND150N8-G VN0104N3-G TO-236-AB | |
TN2524
Abstract: SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110
|
Original |
2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 VN2406 TN2524 SOT-89 N2 2N6660 2N6661 2N7000 2N7002 2N7008 TN0104 TN0106 TN0110 | |
N2 SOT-23
Abstract: wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K
|
Original |
2N6660 2N6661 2N7000 2N7002 OT-23 2N7008 TN0104 TN0106 TN0110 TN0604 N2 SOT-23 wg 252 2N6660 SOT-89 N2 TO-92 TN0604 equivalent TN2524 to-39 supertex VN0808 VN10K | |
HV9961
Abstract: 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509
|
Original |
product25 HV9961 2N7002 MARKING 1702 HV9963 HV9910 hv9910b SR087 str 6655 STR 6656 DN2450 HV509 | |
STR 6656
Abstract: HV509 str 6655 pj 899 diode HV9910 K 3264 fet transistor tray qfn 7x7 diode PJ 966 relay 4098 cell phone detector
|
Original |
||
ic str wg 252
Abstract: HV9961 hv9931 HV9910B HV9910 str 6655 HV9919 pj 899 diode BIBRED STR 6656
|
Original |