TN252 Search Results

25SI

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Orderina Informâtion RdS ON (max) VûS(th) (max) 240V 6.0ft 2.0V Order Numb e r / Package If BVoss / BVcxss TO-243AA* Diet 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels,

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling

Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device

TN2529

Contextual Info: TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

TN2524

Contextual Info: TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Bond Wire Bond Wire Size Drain Al/Cu/Si

Contextual Info: T N 25C Ljì Supertex me. L o w T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BV0SS / * Order Number / Package ^DS ON V gS(«i ) blONI (max) (max) (min) TO-243AA* DICE 200V 6£i 2.0V 1.0A — TN2520ND 240V 60 2.0 V 1.0A

TC8220

Abstract: sot-23 P-Channel MOSFET ultrasound MOSFET SOT-89 SOT-89 TN2524 TN2425 TC1550 TC2320 TC6215
Contextual Info: Selector Guide Ultrasound MOSFETs Ultrasound MOSFETs, Arrays and Drivers Device BVDSS V RDS(ON) (Ω) CISS (typ pF) VGS(TH) (max V) Package Options TN2425 250 3.5 105 0.8 (min) TN2524 240 6.0 65 2.0 3-Lead SOT-89 (N8) TN2640 400 5.0 180 2.0 3-Lead TO-92 (N3)

125OC

Abstract: TN2529 TN2529K6-G
Contextual Info: TN2529 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

tn2520

Abstract: p-channel 200V TN2524 P024 TN2520ND TN2524N8 TN2524ND
Contextual Info: TN2520/TN2524 TN2520 TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* DICE 200V 6Ω 2.0V 1.0A — TN2520ND 240V 6Ω 2.0V 1.0A TN2524N8

Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

Contextual Info: T N 25C Lji Supertex inc. L ow T h r e s h o ld N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package R d S ON V GS(th) BVtcs (max) (max) TO-243AA* DICE 200V 60 2.0V 1.0A — TN2520ND 240V 60 2.0V 1.0A TN2524N8 TN2524ND

Contextual Info: TN2524 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ R d S ON ^ G S (th ) I d (ON) b v dgs (max) (max) (min) TO-243AA* Diet 240V 6.0Q. 2.0V 1.0A T N 2524N 8 T N 2524N D * Sam e as SO T-89. P roduct supplied on 2000 piece ca rrie r tape reels,

tn5cw

Abstract: TN2524 TN5C fet sot-89 marking code mos die TN2524N8-G TN2524ND
Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

tn5cw

Contextual Info: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This

125OC

Abstract: TN2529 TN2529K6-G
Contextual Info: TN2529 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description The Supertex TN2529 is a low threshold enhancementmode transistor that utilizes an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate

kingston sd SPI

Abstract: RCM4300 sandisk 1Gb sd sd card kingston 1gb kingston sd sd card sandisk 1GB SD CARD Kingston SanDisk sandisk SD
Contextual Info: TN252 Use of miniSD Cards with Rabbit-Based Devices The following miniSD™ Cards were evaluated by Rabbit Semiconductor for use with RCM4300 RabbitCore modules and future Rabbit-based devices that support miniSD™ Cards, and were found to interface correctly with these devices. While other miniSD™ Cards may work correctly with a PC, some cards have

tn5c

Abstract: TN2524 TN2524N8 TN2524ND marking Tn5C
Contextual Info: TN2524 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) ID(ON) (min) TO-243AA* Die† 240V 6.0Ω 2.0V 1.0A TN2524N8 TN2524ND * Same as SOT-89. Product supplied on 2000 piece carrier tape reels.

Contextual Info: TN2524N8 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)240 V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D)200m @Temp (øC)150õ IDM Max (@25øC Amb)2.0 @Pulse Width (s) (Condition)300u Absolute Max. Power Diss. (W)1.6# Minimum Operating Temp (øC)-55

Contextual Info: Supertex inc. TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description Low threshold 2.0V max. High input impedance Low input capacitance (125pF max.) Fast switching speeds Low on-resistance

TN2529

Contextual Info: Supertex inc. TN2529 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2529 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description

TN2524

Contextual Info: Supertex inc. TN2524 Die Specification Pad Layout 1 0,0 2 Backside: Drain Die Specifications Die Dimensions Device Length Width Thickness mils Back Side Metal 45 45 11 ± 1.5 Au 1 (mils) TN2524 1 (mils) Back Side Bonding Pad Material Drain Al/Cu/Si Bonding Pad Description