TL 424 TRANSISTOR Search Results

TL 424 TRANSISTOR

Abstract: A1049 C1996 LM60 LM60B LM60BIM3 LM60BIM3X LM60C LM60CIM3 LM60CIM3X
Contextual Info: LM60B LM60C 2 7V SOT-23 Temperature Sensor Y General Description Y The LM60 is a precision integrated-circuit temperature sensor that can sense a b40 C to a 125 C temperature range while operating from a single a 2 7V supply The LM60’s output voltage is linearly proportional to Celsius Centigrade temperature ( a 6 25 mV C) and has a DC offset of

TL 417

Abstract: TlP30C P30C
Contextual Info: 3 8 7 5 0 8 1 _ G ~ ’E S O L ID S TA TE 3 3 7 5 0 6 1 D O 3 l ^ a 3? ^ f f > TIP 30 Series PNP POWER TRANSISTORS -40 — 100 VOLTS -1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP29 SERIES t h e TIP 30 Series power transistors are designed for use in general purpose amplifier and switching applications.

transistor c 6073

Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
Contextual Info: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005

lm7211

Abstract: TL 424 TRANSISTOR 100-C LM60 LM60BIM3 LM60BIM3X LM60CIM3 LM60CIM3X MA03B t6c marking sot23
Contextual Info: b 5011B 4 0 1 0 1 5 0 0 7 T & " _ Semiconductor LM60B/LM60C 2.7V, SOT-23 Temperature Sensor General Description The LM60 is a precision integrated-circuit temperature sen­ sor that can sense a -4 0 ° C to + 125“C temperature range while operating from a single + 2.7V supply. The LM60's

CD860

Contextual Info: TELEDYNE SûE COMPONENTS H D • êW bÜ S GOQbSSB Q ■ T -¿ 7 fiesSOi ULTRA LOW NOISE CD860 DUAL MATCHED N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 424 IU > M HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS T -JtOMAX. • 1.4 nv /Hz1/2 en @ 1 kHz • Min. Operating Gm 25,000 /imho

D44E1

Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
Contextual Info: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS

2N6550

Abstract: CD860 teledyne transistor teledyne crystalonics
Contextual Info: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level

2N6550

Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
Contextual Info: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K

buz31

Abstract: 06G3 BUZ31 H
Contextual Info: S XLXCONIX INC lflE D • 62547 35 0 0 14b 01 3 ■' BUZ31 N-Channel Enhancement Mode Transistor T - 3 TO-22QAB ct - U TOP VIEW PRODUCT SUMMARY V BR|DSS ,D§ r 200 0.20 ■d (A 12.5 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS

MOD200C

Abstract: mod200A
Contextual Info: MOD200A/200B/200C C T * S ilic o n ix in c o r p o r a te d 4 N-Channel Enhancement Mode Transistors HERMETIC MODULE TOP VIEW PRODUCT SUMMARY PART NUMBER V BR DSS (V) rDS(ON) (A) •d (A) LEADFORM OPTION MOD2ÛOA 200 0.11 21 Straight MOD200B 200 0.11 21 Bent Down

2SD1952

Contextual Info: SILICON TRANSISTOR 2SD1952 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1952 is designed fo r audio frequency power amplifier and switching application, especially in Hybrid integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package

424 motorola

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G I N E R E E MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N -C H AN N EL EN H AN CEM EN T-M O D E TM OS M O SFET Part of the GreenLine Portfolio of devices with energyconserving traits.

H11AV2

Abstract: H11AV1A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

H11AV1

Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
Contextual Info: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum

Contextual Info: EXAR 3422618 CORP EXAR CORP D e | 342Eblfi " 91D XR-H100 Master-Chip Chip Size: 95 x 80 mils NPN Transistors Total Components: 424 Small Signal: 73 Bonding Pads: 18 Medium: 2 Max. Operating Voltage: 20V PNP Transistors Lateral: 22 Pinch Resistors 60kfi: 8

XR-H100

Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Contextual Info: EXAR & CORP D e | 342Eblfi □004?b3 i I 3 4 2 2 6 18 EXAR 91D CORP XR-H100 Master-Chip Chip Size: 95 x 80 mils Total Components: 424 Bonding Pads: 18 Max. Operating Voltage: 20V NPN Transistors Small Signal: 73 Medium: 2 PNP Transistors Lateral: 22 T Pinch Resistors

TL 424 TRANSISTOR

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VOE UL CSA SETI BS ® SEMKO OEMKO BAST NEMKO 6-Pin DIP Optoisolators Transistor Output H11A1 thru H11A5 STYLE 1 PLASTIC The H11A1 thru H11A5 devices consist of a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon phototransistor detector.

0903010

Abstract: 2SC3816 E090101 NE0900-07
Contextual Info: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR *£*¡2 , NEM090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N E M 0900-07 series of NPN silicon epitaxial UH F power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.

14n50

Abstract: TL 424 TRANSISTOR sth14n50
Contextual Info: SGS-THOMSON «^ miOTrifMOOi STH14N50 STH14N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH14N50 STH14N50FI . . . . . V dss RDS(on Id 500 V 500 V 0.45 Q 0.45 £2 14.1 A 8 .8 A AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED

arco mica trimmer

Abstract: ARF464A ARF464B VK200-4B
Contextual Info: ARF464A ARF464B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

Contextual Info: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with

2N73A

Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
Contextual Info: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for

BUZ72A

Abstract: TA17401 TB334
Contextual Info: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching

transistor k 4110

Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
Contextual Info: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­