QQ14B Search Results
QQ14B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
BUZ21Contextual Info: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE |
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ss4735buz21o-220abqq14bqq | |
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Contextual Info: SILICONIX INC lflE D • A5 S4 7 3 5 D014bl3S Q ■ BUZ32 N-Channel Enhancement Mode Transistor TO-220AB TOP VIEW O PRODUCT SUMMARY Id . A V(BRJDSS 200 0.40 9.5 i 1 GATE 2 DRAIN (Connected to TAB) 3 SO U R C E 23 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) |
OCR Scan |
d014bl3sbuz32o-220ab | |
4001B
Abstract: CI 4001B 4001b cmos ic 4025BG B4001B 4025B 4002B CMOS HCC 4001B hcf4001b
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OCR Scan |
4000b4001b4002b4025b+8 | |
32F81
Abstract: 32F8144 32f8144a 32F814
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32f814432f8132f8144a32f814 | |
CMOS HCC 4001B
Abstract: 4001B 4025B 4002B PLH-1060 HCF Family CMOS 4000B series device 4002 4000B minimum VOH of the standard 4000B Series CMOS
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OCR Scan |
q014st4000b4001b4002b+7 | |
buz31
Abstract: 06G3 BUZ31 H
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buz31o-22qabqq14b06g3+1 | |
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Contextual Info: PowerMOS transistor_ N AUER PHILIPS/DISCRETE QbE D • BIJZ35_ [^53=131 O O l M b n 5 ■ T - 3 V l J July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a metal envelope. This device is intended for use in |
OCR Scan |
bijz35_buz35bbs3t31t-39-11+3 | |
2SA2042
Abstract: 2SA20 2SK2042
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OCR Scan |
2sk20422sa20420014b31vdds150v+2 | |
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Contextual Info: M PIC16C7X ic r o c h ip 8-Bit CMOS Microcontrollers with A/D Converter Devices included in this data sheet: • Low-power, high-speed CMOS EPROM technology PIC16C70 • Fully static design PIC16C71 • Wide operating voltage range: 3.0V to 6.0V PIC16C71A |
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pic16c7xpic16c70pic16c71pic16c71a+5 | |
32H6810B-CGT
Abstract: 32H6810B
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OCR Scan |
32h681oa/681ob32h681oa/68148lead+4 |