TKP* SUPPLY Search Results

Contextual Info: Topstek Current Transducer TKP3A . TKP30A TKP 3A~30A Applications Features iHighly reliable Hall Effect device iCompact and light weight iFast response time iExcellent linearity of the output voltage over a wide input range iExcellent frequency response > 50 kHz

P8800I

Abstract: H8800 auto ac line P-8800I SP9926 90-264V P8800
Contextual Info: SP9926 8.6 Watts Series Switching Power Supply FEATURES ●Low Cost ●90-264Vac Universal Input ●CISPR’B’& CNS‘B’Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery

P8800I

Abstract: 12VMIN
Contextual Info: ＜ SP9926 8.6 Watts Series Switching Power Supply FEATURES ●Low Cost ●90-264Vac Universal Input ●CISPR’B’ & CNS‘B’ Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery

sp9908

Abstract: bothhand sp9908 90-264VAC P8800I
Contextual Info: ＜ SP9908 Series 39 Watts Switching Power Supply FEATURES ●Hub Standard 3”x6” Size. ●90-264Vac Universal Input ●CISPR’B’ Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery

0714

Abstract: P8800 P8800I
Contextual Info: ＜ SP9801 15 Watts Series Switching Power Supply FEATURES ●Low Cost ●90-264Vac Universal Input ●CISPR’B’ & CNS‘B’ Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery

mps2002

Abstract: SVH-21TP EN60601-1 IEC60601-1 5566-2 EN5501 DHT 11 tkp DHT
Contextual Info: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved

EN60601-1

Abstract: IEC60601-1 dht 22
Contextual Info: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ Änderungen vorbehalten / subject to change without notice

CXK77B3610GB

Abstract: CXK77B3610GB-6 CXK77B3610GB-7
Contextual Info: CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input

tkp dh2

Abstract: EN60601-1 IEC60601-1 rf transistor mps
Contextual Info: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved

capacitors TKP

Abstract: 200w Transistor h jst 10 connector tkp 24 EN60601-1 IEC60601-1
Contextual Info: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved

Burst CellularRAM Memory

Contextual Info: TN-45-04: Multiplexed Async/Burst CellularRAM Technical Note CellularRAM Multiplexed Async/Burst Operation Introduction Micron CellularRAM™ products are high-speed CMOS PSRAM devices developed for low-power, portable applications. The popularity of the CellularRAM interface and a

UL1007

Abstract: AWG18 AWG20 AWG 24 UL1007 H6657P UL1007 20 awg UL-1007 UL1007 AWG18 tkp 24
Contextual Info: SWITCHING POWER SUPPLY D AWG AWG D #16 <1.8 #18 <1.8 #20 <1.5 #22 <1.2 DOC No Date 線 材 規 格 圖 WIRING HARNESS #24 <1.0 #26 <1.0 TWISTED TWISTED & HALF TIN DIPPED TWISTED & FULL TIN DIPPED FB-OT-S54 2002.12.26 REV A1 UNIT mm 料號 Tolerance MODEL CUSTOMER

DQ100

Abstract: transistor d514
Contextual Info: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed

Contextual Info: 1 2 3 4 PIN No NAME DESCRIPTION 1 2 CD/DAT3 CMD CARD DETECTION COMMAND/ANSWER 3 4 Vss1 Vdd GND POWER SUPPLY 5 6 7 CLK Vss2 CLOCK GND Connector data line 0 DAT0 DAT1 DAT2 8 9 Connector data line 1 Connector data line 2 5 TECHNICAL CHARACTERISTICS A MATERIAL

Contextual Info: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

UtRAM Density

Abstract: D513
Contextual Info: Preliminary UtRAM2 K1C6416B8E 64Mb 4M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

EMC326SP16AK

Contextual Info: Preliminary EMC326SP16AK 2Mx16 CellularRAM AD-MUX Document Title 2Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 18,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717

EMC646SP16K

Abstract: Burst CellularRAM Memory
Contextual Info: Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Document Title 4Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 13,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea

K1C1616B8B

Contextual Info: K1C1616B8B UtRAM2 16Mb 1M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN

Contextual Info: MPO-200S Series Single Output, 200W Miniature, Open Frame AC/DC Power Supplies Electrical Specifications Key Features: • 200W Output Power • PFC to EN 61000-3-2,3 “D” • Universal 90-264 AC Input • EN 60950 Approved UL • Miniature 3 x 5 In Package

104M

Abstract: N64T1618CBA
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N64T1618CBA Advance Information 64Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N64T1618CBA is an integrated memory

EMC326SP16AJ

Contextual Info: Preliminary EMC326SP16AJ 2Mx16 CellularRAM Document Title 2Mx16 bit CellularRAM Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 05,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717

BCR150

Abstract: 104M N32T1618CBB
Contextual Info: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N32T1618CBB Advance Information 32Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N32T1618CBB is an integrated memory

transistor d514

Contextual Info: Preliminary UtRAM2 K1C6416B2E 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,