TJM 10 Search Results

P1007LS12

Contextual Info: Fast Turn Off Thyristors - Capsule Type Type Part No. Old Part No. VDRM ITAV VRRM TK=55°C V A I2t 10ms ½ sine ITSM VR 60% VRRM A A2s tq @ 200V/µs Typ. Reverse Recovery Charge TJM, 50% Chord Qr @ITM @-di/dt VT0 rT TJM @TJM RthJK d.c. 180° sine µs µC A

p0273sc

Abstract: P202PH12 P0128SJ12E
Contextual Info: Fast Turn Off Thyristors - Stud Types Type VDRM ITAV VRRM TC=55°C I2t 10ms ½ sine ITSM VR 60% VRRM tq Typ. Reverse Recovery Charge @ TJM, 50% Chord 200V/µs Qr 2 @ ITM @-di/dt VT0 rT TJM RthJC @ TJM 180° sine Fig. No. Westcode "P" series of fast switching thyristors have regenrative gate structure to ensure low switching losses and high di/dt perofrmance. "P" Series devices are particularly attractive to; Inverter, DC chopper drives, UPS and Pulse

N195PH16

Abstract: N170PH12 N086PH12 N105PH12 N105PH16 N0335SC160 N0180SH120 N0290SG120 N195PH12 N0131SH120
Contextual Info: Type VDRM ITAV VRRM TC=55°C ITSM I2t 10ms ½ sine VT0 rT @TJM VR ≤60% VRRM Part No. Old Part No. V A A N0131SH120 N0131SH160 New> N0131SJ120 New> N0131SJ160 N0180SH120 N0180SH160 New> N0180SJ120 New> N0180SJ160 N0290SC120 N0290SC160 New> N0290SG120 New> N0290SG160

AX1209

Abstract: LF40100M LF40100
Contextual Info: A fa tjm m an A M P com pany RF MOSFET Power Transistor, 100W, 40V 500 -1000 MHz Features r.i Gold Metallized • Com m on Source Configuration Input Matched • Push-Pull Resfet Structure • Applications Broadband Linear O peration Lower Capacitances for

MBR40100PT

Abstract: Sirectifier Semiconductors 40HF P460
Contextual Info: MBR40100PT High Tjm +175oC Schottky Barrier Diodes A C A Dimensions TO-247AD A C A C(TAB) A=Anode, C=Cathode, TAB=Cathode MBR40100PT VRRM V 100 Symbol VDC V 100 Characteristics Maximum DC Reverse Current At Rated DC Blocking Voltage 0.780 0.819 0.800 0.845

MBRB2515L

Contextual Info: MBRB2515L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-263 D2PAK C(TAB) A C A C A=Anode, C=Cathode, TAB=Cathode MBRB2515L VRRM V 15 VRMS V 10.5 Symbol 1. 2. 3. 4. VDC V 15 Characteristics Gate Collector Emitter Collector Botton Side

MBR30150PT

Abstract: MBR30200 MBR30200PT MBR30100PT
Contextual Info: MBR30100PT thru MBR30200PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR30100PT MBR30150PT MBR30200PT VRRM V 100 150 200 VRMS V 70 105 140 Symbol VDC V 100 150 200

MBR20100CT

Abstract: MBR2070CT MBR2080CT MBR2090CT
Contextual Info: MBR2070CT thru MBR20100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR2070CT MBR2080CT MBR2090CT MBR20100CT VRRM V 70 80 90 100 VRMS V

MBR10100CT

Abstract: MBR1070CT MBR1080CT MBR1090CT
Contextual Info: MBR1070CT thru MBR10100CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR1070CT MBR1080CT MBR1090CT MBR10100CT VRRM V 70 80 90 100 VRMS V

MBR10200

Abstract: MBR10150
Contextual Info: MBR10150 thru MBR10200 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR10150 MBR10200 VRRM V 150 200 VRMS V 105 140 Symbol VDC V 150 200 Test Conditions o Dim. A B C D E

10N100

Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q
Contextual Info: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM

MBR4030PT

Abstract: MBR4035PT MBR4040PT MBR4045PT
Contextual Info: MBR4030PT thru MBR4045PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR4030PT MBR4035PT MBR4040PT MBR4045PT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC V 30

MBR3050PT

Abstract: MBR3060PT
Contextual Info: MBR3050PT thru MBR3060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR3050PT MBR3060PT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics Maximum DC Reverse Current

1N100

Contextual Info: Advance Technical Information High Voltage MOSFET IXTH 1N100 IXTT 1N100 Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 1.5 A IDM TC = 25°C, pulse width limited by TJM

MBR10100

Abstract: MBR1070 MBR1080 MBR1090
Contextual Info: MBR1070 thru MBR10100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR1070 MBR1080 MBR1090 MBR10100 VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol

MBR8100

Abstract: MBR870 MBR880 MBR890
Contextual Info: MBR870 thru MBR8100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR870 MBR880 MBR890 MBR8100 VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol VDC

MBR8100L

Abstract: MBR870L MBR880L MBR890L
Contextual Info: MBR870L thru MBR8100L Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR870L MBR880L MBR890L MBR8100L VRRM V 70 80 90 100 VRMS V 49 56 63 70 Symbol

MBR6030PT

Abstract: MBR6035PT MBR6040PT MBR6045PT
Contextual Info: MBR6030PT thru MBR6045PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR6030PT MBR6035PT MBR6040PT MBR6045PT VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 Symbol VDC V 30

MBR4050PT

Abstract: MBR4060PT
Contextual Info: MBR4050PT thru MBR4060PT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode MBR4050PT MBR4060PT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics Maximum DC Reverse Current

Contextual Info: Advance Technical Information PolarTM P & N-Channel Power MOSFETs Common Drain Topology P CH. N CH. - 150V 150V - 22A 36A RDS on 110mΩ Ω 40mΩ Ω trr(typ) 228ns 150ns FMP36-015P VDSS 43 ID25 T1 5 34 T2 11 22 Symbol Test Conditions Maximum Ratings TJ TJM

MBR10200CT

Abstract: MBR10150CT
Contextual Info: MBR10150CT thru MBR10200CT Wide Temperature Range and High Tjm Schottky Barrier Rectifiers A C A Dimensions TO-220AB A C A C TAB A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR10150CT MBR10200CT VRRM V 150 200 VRMS V 105 140 Symbol VDC V 150

MBR5100

Abstract: MBR580
Contextual Info: MBR580 thru MBR5100 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR580 MBR5100 VRRM V 80 100 VRMS V 56 70 Symbol VDC V 80 100 Characteristics

MBR5200

Abstract: MBR5150
Contextual Info: MBR5150 thru MBR5200 Wide Temperature Range and High Tjm Schottky Barrier Rectifiers Dimensions TO-220AC A C A B C D E F G H J K L M N Q A C C TAB A=Anode, C=Cathode, TAB=Cathode MBR5150 MBR5200 VRRM V 150 200 VRMS V 105 140 Symbol VDC V 150 200 Characteristics

Contextual Info: Advance Technical Information PolarHVTM HiPerFET N-Channel Power MOSFET Phase leg Topology VDSS ID25 FMM22-06PF 3 3 T1 55 RDS on trr(max) = = ≤ ≤ 600V 12A Ω 350mΩ 200ns 4 4 T2 1 1 22 Symbol Test Conditions TJ TJM Tstg ISOPLUS i4-PakTM Maximum Ratings