TB377 Search Results

Thermal Resistance vs. Mounting Pad Area

Abstract: TB377
Contextual Info: Thermal Resistance vs. Mounting Pad Area Technical Brief October 1999 TB377 Author: J. Wojslawowicz T JM – T A P DM = -Z θJA 300 RθJA = 103.2 - 24.3 250 Rθβ, RθJA (oC/W) The maximum rated junction temperature, TJM, and the

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet December 2001 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76113T3ST Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

n13 sot 23

Abstract: 44E10 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST TM Data Sheet June 2000 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4388.3 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

smps 5kw

Abstract: controller for PWM with IGBT ICL7660 pspice model 48V SMPS computer SMPS Circuit full bridge mosfet smps 5kw smps full bridge S.M.P.S dc-ac inverter Controller PWM igbt power 5kw pspice high frequency mosfet
Contextual Info: 891.1 WC-001 Power Topology 5/16/00 12:45 PM Page 2 POWER SUPPLY TOPOLOGIES Buck Step Down TYPE OF CONVERTER Boost (Step Up) Buck - Boost (Step Down/Up) SEPIC (Step Down/Up) CUK (Step Up/Down) Forward Flyback Push-Pull Two-Switch Forward Half Bridge Full Bridge

76105dk8

Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76113

Abstract: AN7254 AN7260 AN9321 AN9322 HUF76113T3ST TB334
Contextual Info: HUF76113T3ST Data Sheet June 2003 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUFA75309T3ST TM Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

309T

Abstract: TL 4941 Pspice AN9321 HUFA75309T3ST TB334
Contextual Info: HUFA75309T3ST Data Sheet Title UFA 309T T bject A, V, 70 m, annel raFE November 2000 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

Contextual Info: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF75309T3ST Data Sheet June 1999 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,

TA7611

Abstract: TB334 AN7254 AN7260 AN9321 AN9322 HUF76113T3ST
Contextual Info: HUF76113T3ST Data Sheet December 2001 4.7A, 30V, 0.031 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

Contextual Info: HUF76131SK8 Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: HUF75309T3ST in t e r r ii Data Sheet June 1999 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET a 4377.3 Features • 3A, 55V T h is N -C hannel pow e r M O S F E T is m File N um ber • U ltra Low O n-Ftesistance, rc s jO N = 0 .0 7 0 0 m anu facture d using the innovative

AN9321

Abstract: AN9322 HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 Data Sheet January 2003 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the

76105DK8

Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

76105DK8

Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334
Contextual Info: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

intersil 76131SK8

Abstract: AN9321 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 TM Data Sheet June 2000 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET File Number 4396.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

AN7254

Abstract: AN9321 AN9322 HUF75309T3ST TB334
Contextual Info: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in

AN9321

Abstract: HUF76113DK8 HUF76113DK8T MS-012AA TB334
Contextual Info: HUF76113DK8 TM Data Sheet June 2000 6A, 30V, 0.032 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4387.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced

TA7613

Abstract: AN9321 AN9322 HUF76131SK8 HUF76131SK8T MS-012AA TB334
Contextual Info: HUF76131SK8 Data Sheet December 2001 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the