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HUF76105DK8T Datasheets (2)

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Fairchild Semiconductor

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HUF76105DK8T		Fairchild Semiconductor	5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET	Original	PDF	192.92KB	13
HUF76105DK8T		Fairchild Semiconductor	5A, 30V, 0.050 Ohm, Dueal N-Channel, Logic Level UltraFET Power MOSFET	Original	PDF	243.79KB	12

HUF76105DK8T Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HUF76105DK8 Semiconductor Data Sheet October 1998 Features 5A, 30 V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the	OCR Scan	HUF76105DK8 1-800-4-HARRIS	PDF
76105DK8 Contextual Info: HUF76105DK8 S e m ic o n d u c to r October 1998 Data Sheet • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	OCR Scan	HUF76105DK8 1-800-4-HARRIS 76105DK8	PDF
Contextual Info: HUF76105DK8 Data Sheet October 1999 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET File Number 4380.5 Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced	Original	HUF76105DK8	PDF
76105dk8 Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334 Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HUF76105DK8 76105dk8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334	PDF
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HUF76105DK8 HUF76105DK8 HUF76105DK8T136 HUF76105DK8T	PDF
Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 6105D K8 /Subject (5A, 30V, 0.050 Ohm, Dual NChannel, Logic Level UltraF ET Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Dual NChannel,	Original	HUF76105DK8 6105D	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
76105DK8 Abstract: AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334 Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HUF76105DK8 76105DK8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334	PDF
76105DK8 Abstract: AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334 Contextual Info: HUF76105DK8 TM Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HUF76105DK8 Fil15mm) MS-012AA 330mm EIA-481 76105DK8 AN9321 HUF76105DK8 HUF76105DK8T MS-012AA TB334	PDF
I-16V Contextual Info: HUF76105DK8 interrii Data Sheet O c to b e r 1999 SA, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5A, 30V • Ultra Low On-Resistance, ros ON = 0.050Q • Temperature Compensating PSPICE Model • Temperature Compensating SABER® Model	OCR Scan	HUF76105DK8 I-16V	PDF
76105DK8 Abstract: Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334 Contextual Info: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in	Original	HUF76105DK8 76105DK8 Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334	PDF