TIP 29 A TRANSISTOR Search Results

tip 220

Abstract: SGS TIP 32 BD NPN transistors 177 tip 31 mje370 transistor bd 126 To 126 TIP31 NPN Transistor diagram mje520 2n 4918 9 218
Contextual Info: ¿t 7 SGS'THOMSON GMO SIMSi[LI(S?[MM(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR TO 39 SOT 194 SOT 93 TOP 31 ISOWATT 218 TO 220 TO 3 ISOWATT 220 EPITAXIAL BASE TRANSISTORS Epitaxial base - Ic m : 1 -*• 3 A, Vc e o : 22 — 100 V Internal schem atic diagram s

TIP 34 pnp

Abstract: TIP NPN TIP 29 transistor TIP 31 Transistor tip 40 BD PNP TO-3P tip 30 Transistors tip 29 tip 30c
Contextual Info: SlU ZIU M -K O M PLEM ENTARE-LEISTU N G STR ANSISTO REN Allgemeine und NF-Anwendungen SILICON COM PLEM ENTARY POW ER TRANSISTORS (General and Low-frequency Applications) 3-4 Ptot <a) T c = 25 °C (100 oc) W (a) |C Typ type NPN PNP BD BD BD BD 239 239 A 239 B

transistor tip 109

Abstract: j1n transistor bd 109 transistor TIP30 transistor riP30 bd 125 equivalent TEXAS INSTRUMENTS TIP29 Texas Instruments TIP30C Transistor tip29 TIP308
Contextual Info: TYPES TIP30. TIP30A, TIP30B. TIP30C P-N P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P PLIC A TIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH T IP 29, T IP 2 9 A , T IP 29B , TIP29C

ksd 250v 10a

Abstract: ksd 202 ksd 180 13003 bd ksd 250v ksd 75 bow 94c bdx 44b ksd 250V 5A d5072
Contextual Info: TRANSISTORS FUNCTION GUIDE 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package SOT-23 TO-92 TO-92L TO-126 TO-220 Application FM RM AMP KSC2223 Mix Conv KSC2223 Local Ose KSC2223 IF AM Diff. Amp KSC2715 RF KSC1623 Conv Ose KSC2715 IF KSC2715

c2688 L

Abstract: TIP 29 transistor texas instruments tip29 npn tip equivalent transistor c 243 TIP 34 pnp BD NPN transistors TLP298 1N914 TIP29A
Contextual Info: TYPES TIP29, TIP29A, TIP29B, TIP29C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH TIP30, TIP30A, TIP30B, TIP30C • 30 W at 25°C Case Temperature • 1 A Rated Collector Current

Bow94c

Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Contextual Info: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80

2n3055

Abstract: bd 3055
Contextual Info: POWER CASES TRANSISTORS ; _ P - 2 2 _ TQ- ?_ TQ- 220 T Y P E NPN PNP SDT 9302 SDT 9303 SDT 9304 SDT 9305 SDT 9306 SDT 9307 SDT 9308 SDT 9309 $ TIP 29 $ TIP 30 $ TIP 29A $ TIP 30A $ TIP 29B $ TIP 30B

2SA1301F

Abstract: 2SB817F 2SC3280F 2SD1047F 2SD1426F BU426AF BU426F BU508AF 2sd1047
Contextual Info: T0-3P Fully isolated Plastic Package Transistors TO BE MOUNTED WITH SILICONE GREASE ON THE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximum Ratings Type No. Pola­ rity Electrical Characteristics Ta = 25CC, Unless Otherwise Specified " cbo ^CEO ^EBO PD

BU426AF

Abstract: T03P BU908F 2SA1301F 2SB817F 2SC3280F 2SD1047F 2SD1426F BU426F BU508AF
Contextual Info: T0-3P Fully isolated Plastic Package Transistors TO BE MOUNTED WITH SILICONE GREASE ON THE BACK SIDE, ENSURING BACK SIDE HOLES FILLED. Maximum Ratings Type No. Pola­ rity Electrical Characteristics Ta = 25CC, Unless Otherwise Specified " cbo ^CEO ^EBO PD

bd 125 equivalent

Abstract: TIP 41 transistor texas instruments tip35 TIP 29 transistor transistor equivalent of tip 50 TIP 34 c TIP35 TIP 41 EQUIVALENT TIP 29 A transistor TIP 34 pnp
Contextual Info: TYPES TIP35, TIP35A, TIP35B, TIP35C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FO R P O W E R -A M P L IF IE R A N D H IG H -S P E E D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH TIP36, TIP36A , TIP36B, TIP36C

TIP34

Abstract: TIP34C equivalent TIP33C TIP34A texas instruments tip34 TIP33 TIP33A TIP33B TIP34B TIP34C
Contextual Info: TYPES TIP34, TIP34A, TIP34B, TIP34C P-N-IP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR P O W E R -A M P LIF IE R A N D H IG H -SP EE D -SW IT C H IN G A P P L IC A T IO N S D E S IG N E D FOR C O M P L E M E N T A R Y U SE W ITH TIP33, TIP33A, TIP33B, TIP33C

lN914

Abstract: TIP29 TIP29A TIP29B TIP29C TIP30
Contextual Info: TIP 29 Series NPN POWER TRANSISTORS 40-100 VOLTS 1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP30 SERIES The T IP 29 Series pow er transistors are designed for use in general purpose am plifier and switching applications. Features: • Designed for complementary use with TIP 30 series

TL 417

Abstract: TlP30C P30C
Contextual Info: 3 8 7 5 0 8 1 _ G ~ ’E S O L ID S TA TE 3 3 7 5 0 6 1 D O 3 l ^ a 3? ^ f f > TIP 30 Series PNP POWER TRANSISTORS -40 — 100 VOLTS -1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP29 SERIES t h e TIP 30 Series power transistors are designed for use in general purpose amplifier and switching applications.

tip29 equivalent

Contextual Info: Power Transistors TIP29, TIP29A, TIP29B, TIP29C H A RR IS S E M I C O N D S E CT OR 27E D 990 4 3 0 2 27 1 0 G 2 0 5 3 2 b • HAS File Number B Epitaxial-Base, Silicon N-P-N VERSAWATT Transistors For P o w e r-A m p lifie r an d H ig h -S p e e d -S w itc h in g A p p licatio n s

tip 420 transistor

Abstract: BD245C TEXAS INSTRUMENTS transistor tip 420 transistor BD245 BD245 transistor BD 246 BD245C transistor tip 3055 tip 420 transistor bd 202
Contextual Info: BD245, BD245A, BD245B, BD245C FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD246A-C 80 W at 25 ° C Case Temperature 10 A Rated Collector Current M in fT of 3 M H z at 10 V , 50 0 mA

3055 5C pnp transistor

Abstract: TIP 35 transistor BD243 transistor BD 246 transistor bd 242 8D243C transistor tip 3055 BD 245 TIP 29 transistor BD243A
Contextual Info: BD243, BD243A, BD243B, BD243C FOR POWEFI-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE WITH BD244A-C 65 W at 25 °C Case Temperature 6 A Rated Collector Current Min f j of 3 MHz at 10 V , 500 mA mechanical data TO-66P All dimensions are in mm

transistor BD245

Abstract: TIP 48 transistor TIP 32 transistor transistor TIP 32 npn transistor bd243c TIP 34 pnp BD242 BD242A BD242B TO-3P
Contextual Info: B0242, BD242A, BD242B, B0242C FOB P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD241A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current M in f t o f 3 M H z at 10 V , 500 mA

transistor tip 3055

Abstract: Tip 3054 BD243A..C transistor BD 240 BD 139 transistor TIP 50 transistor BD249 TIP 3055 transistor transistor bd 139 BD 245
Contextual Info: BD244, BD244A, BD244B, BD244C FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD243A-C 65 W at 2 5 ° C Case Temperature 6 A Rated Collector Current M in f T of 3 M H z at 10 V , 5 0 0 mA

B0241A

Abstract: TIP 32 transistor transistor TIP 32 TIP 35 transistor BDX 241 transistor BD 246 80241A Tip 32 BD241 BD241B
Contextual Info: BD241, BD241A, BD241B, BD241C FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS DESIGNED FOR COMPLEMENTARY USE W ITH BD242A-C 40 W at 25 °C Case Temperature 3 A Rated Collector Current Min fT of 3 MHz at 10 V , 500 mA mechanical data absolute maximum ratings at 25 °C case temperature unless otherwise noted

BD249 TEXAS INSTRUMENTS

Abstract: BD149 BD249C TEXAS INSTRUMENTS B0249C bd249 B0249A 3055 5C pnp transistor B0249 BD149A BD249A
Contextual Info: BD249, BD249A, BD249B, BD249C FOR POW ER-AM PLIFIER AND HIGH-SPEED-SWITCHING APPLICATIO N S DESIGN ED FOR CO M PLEM EN TARY USE WITH BD250A-C 125 W at 25 ° C Case Temperature 25 A Rated Collector Current Min fT of 3 MHz at 10 V, 1 A mechanical data TO-3P

Contextual Info: TIP30, TIP30A, TIP30B, TIP30C File N um ber 988 Epitaxial-Base, Silicon P-N-P VERSAWATT Transistors For Power-Amplifier and High-Speed-Switching Applications Features: • ■ ■ ■ 30 W at 25° C case tem perature 3 A ra ted c o lle c to r c u rre n t Min. h o f 3 MHz a t -1 0 V, -2 0 0 mA

TIP 29 transistor

Abstract: BD250C transistor BD 240 transistor tip 3055 transistor tip 62 bd250 B0250A BD250C TEXAS INSTRUMENTS BD 139 transistor mj 3055 npn
Contextual Info: BD250, BD250A, BD250B, BD250C FOR P O W E R -A M P L IFIE R A N D H IG H -S P EE D -S W ITC H IN G A P P L IC A TIO N S D E S IG N E D FOR C O M P L E M E N T A R Y USE W IT H BD249A-C 125 W at 25 °C Case Temperature 15 A rated Collector Current Min f T of 3 M H z at 10 V , 1 A

Repeater rf

Abstract: Rogers 4350 datasheet schematic diagram 800 watt power amplifier XD010-42S-D4F GSM 900 mhz repeater circuit
Contextual Info: XD010-42S-D4F Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit

GSM repeater circuit

Abstract: Rogers 4350 datasheet base station power amp GSM repeater GSM repeater power amplifier module RF MODULE XD010-42S-D4F er35
Contextual Info: Product Description Sirenza Microdevices’ XD010-42S-D4F 8W power module is a robust 2stage Class A amplifier module for use in the driver stages of linear RF power amplifiers of cellular base stations. The power transistors are fabricated using Sirenza's latest, high performance LDMOS process. This unit