TIC 225 DATASHEET Search Results

Contextual Info: KSC5024 NPN SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILTY • HIGH SPEED SW ITC HING • W ID E SO A ABSOLUTE MAXIMUM RATINGS R a tin g U n it C ollector-Base Voltage C h a ra c te ris tic V cB O S ym bol 800 V C ollector-E m itter Voltage VcEQ 500 V

9W40

Contextual Info: PM2112 PACIFIC MONOLITHICS DATASHEET Single Supply RFIC Power Amplifier ^ — 1880 to 1990 MHz Operation —— Features • • • • • 3 to 5 V olt Operation 28 dBm O utput Power @ 3V 45% Efficiency Class A Bias Low IM D / ACP Applications • • •

P217V

Abstract: 58A9 T7052
Contextual Info: •ft««:»» £ mu IDT7052S/L HIG H-SPEED 2K X 8 FourPort STATIC RAM 1*£8:8» 01 : mm;- j Features TTL-compatible; single 5V ±10% power supply Available in 120 pin and 132 pin Thin Quad Flatpacks and 108 pin PGA Military product compliant to MIL-PRF-38535 QML

Contextual Info: PRELIMINARY IDT7054S/L HIGH-SPEED 4K x 8 FourPort STATIC RAM * Available in 128 pin Thin Quad Flatpack and 108 pin PGA packages * Industrial temperature range -40°C to +85°C is available for selected speeds Features * High-speed access - Military:25/35ns (max.)

K366E

Abstract: N8223N ael 322 ATF1502AE ATF1504AE ATF1508AE ATF1516AE ATF1532AE ATF1504AE-4AC100 306T
Contextual Info: Features • 2nd Generation EE Complex Programmable Logic Devices • • • • • • • • • • – 3.0V to 3.6V Operating Range with 5V Tolerant I/Os – 32 - 512 Macrocells with Enhanced Features – Pin-compatible with Industry-standard Devices

Contextual Info: f*3 HARRIS CDP1823 823 S E M I C O N D U C T O R 128-Word x 8-Bit LSI Static RAM March 1992 Features Description • Fast Access Time - Vdo = 5 V .450ns . Vdo = 1 0 V .250ns

Contextual Info: CY7C346 CY7C346B CYPRESS 128-Macrocell M AX EPLD Features Functional Description • 128 macrocells in 8 LABs • 20 dedicated inputs, 64 bidirectional I/O pins • Programmable interconnect array • 0.8-micron double-metal CMOS EPROM technology CY7C346

9953 smd

Abstract: HTM1505 SMD DC 6015 Humirel Thermistor NTC-10 28627 hs 8178 HPC035 HPP805D033 ic um 3481
Contextual Info: TECHNICAL DATA Advance Information HTM1735 Compliant with RoHS recommendations ANALOG VOLTAGE RELATIVE HUMIDITY AND TEMPERATURE MODULE Based on the rugged H S 110 ILF humidity sensor, HTM1735 is a dedicated humidity and temperature transducer designed for OEM applications where a reliable and accurate measurement is needed. Direct

T7035

Contextual Info: HIGH-SPEED 8 K x 18 DUAL-PORT STATIC RAM PRELIMINARY IDT7035S/L Features * * True Dual-Ported memory cells which allow simultaneous using the Master/Slave select when cascading more than reads of the same memory location one d e v ic e _ ♦ M/S = H for BUSY output flag on Master

Contextual Info: ykiyixiyk! 1 9 -4 4 5 4 ; R e v 1; 10 /9 4 Quad, H igh-Side P o w er S w itch _ F e a tu re s The MAX625 is a quad, high-side power switch that switches 1A steady-state loads with 4A peak currents. The switch resistances are typically 0.20, and internal

Contextual Info: LM A1009/2009 12 x 12-bit M ultiplier-Accum ulator DEVICES INCORPORATED 1 FEATURES | DESCRIPTION □ 20 ns Multiply-Accumulate Time □ DECC SMD No. 5962-90996 The LMA1009 and LMA2009 are high­ speed, low power 12-bit multiplieraccumulators. They are pin-for-pin

MIL-PRF-38538

Contextual Info: IDT HIGH-SPEED 8K x 8 DUAL-PORT STATIC RAM F e a tu re s * * * * True Dual-Ported memory cells which allow simultaneous reads of the same memory location High-speed access - Military: 20/25/35/55/70ns max. - Industrial: 35/55ns (max.) - Commercial: 15/17/2Q/25/35/55ns (max.)

Contextual Info: HIGH-SPEED 4 K x 16 DUAL-PORT STATIC RAM Features ♦ True Dual-Ported memory cells which allow simultaneous reads of the same memory location ♦ High-speed access - Military:20125135155170ns max. - Industrial: 55ns (max.) - Commercial: 15/17120125135155ns (max.)

bp 70927

Contextual Info: -x*fo«Kyffr’| . . . J ii:r mjjk | | m m Lm m £ !! • 1 1 I I 'W W I f t # 1 h ig h -s p e e d 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM p r e lim in a r y IDT70927S/L F e a tu re s * * * * * * * Full synchronous operation on both ports

Contextual Info: VDP 31xxB PRELIMINARY DATASHEET Contents Page Section Title 5 1. Introduction 6 1.1. VDP Applications 7 2. Functional Description 7 2.1. Analog Front-End 7 2.1.1. Input Selector 7 2.1.2. Clamping 7 2.1.3. Automatic Gain Control 7 2.1.4. Analog-to-Digital Converters

Contextual Info: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L Features: * * a cce ss of the sam e memory location Full synchronous operation on both ports High-speed clock to data acce ss - - * additional logic True Dual-Ported memory cells which allow simultaneous

7006L

Abstract: 7006S
Contextual Info: HIGH-SPEED 16K x 8 DUAL-PORT STATIC RAM Features True Dual-Ported memory cells which allow simultaneous reads of the same memory location * High-speed access * * - Military:20125135155170ns max. - Industrial: 55ns (max.) - Commercial: 15/17120125135155ns (max.)

ATF1502SE

Abstract: ATF1504SE ATF1508SE ATF1516SE ATMEL CPLD
Contextual Info: Features • 2nd Generation EE PROM-based Complex Programmable Logic Devices • • • • • • • • • • – 4.5V to 5.5V Operating Range with I/Os 3.3 or 5V Compliant – 32 - 256 Macrocells with Enhanced Features – Pin-compatible with Industry Standard Devices

tc183

Abstract: E17G tc183G TC163G TC180G single port RAM TC183e Toshiba TC8570
Contextual Info: TOSHIBA TC183G/ECMOS ASIC Family 3.0V/3.3V and 5.0V, 0.5nm1 TheTC183G/E eases the transition from 5V to 3V based systems. Benefits • Mixed 3.0/3,3V and 5V I/O 0.5 micron CMOS process with fast 230ps gate delay performance with the power savings of a 3V core

Contextual Info: PRELIMINARY IDT709279S/L HIGH-SPEED 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM F e a tu re s * True D ual-Ported m em ory c e lls w hich allow sim u lta n e o u s Full sy n c h r o n o u s operation on both p orts a c c e s s of the sa m e m em ory location

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

A12L

Abstract: CY7C09349 CY7C09359
Contextual Info: fax id: 521 9 CYPRESS CY7C09349 CY7C09359 PRELIMINARY 4K/8K x 18 Synchronous Dual-Port Static RAM • H ig h-speed clo ck to d ata ac ce ss 6 .5 /7 .5 /1 2 ns m ax. Features • Low o p e ratin g p o w er • True D u al-P o rted m e m o ry cells w h ich allo w sim u lta­

RSN 3306 H

Abstract: ITT RZ2 g6 TDA 8841 IC rsn 3404 SN76670 4L71 bu 2508 af equivalent MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR sn76131 a1208 transistor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

memory management instructions of 80286 microprocessor

Abstract: l8028
Contextual Info: FU JITSU NMOS HIGH-PERFORMANCE 16-BIT MICROPROCESSOR WITH MEMORY MANAGEMENT AND PROTECTION MBL 80286-8 MBL 80286-6 January 1986 Edition 1.0 N M O S H IG H P E R F O R M A N C E 1 6 -B IT M ICR O PR O C ES SO R W IT H M E M O R Y M A N A G E M E N T A N D P R O T E C T IO N