TI7D57FL Search Results

SEC irf630

Abstract: IRF630 irf631 IRF630 SEC irf632 IRF633 for IRF630
Contextual Info: ZETEX SEMICOND UCTORS TT70S7Û IS» D 0 0 0 55 7 4 3 IZETB 95D 0 5 5 7 4 I T~3*f-n IRF630 IRF631 IRF632 IRF633 N-channel enhancement mode vertical DMOS FET FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSU E 3 - NOVEM BER 1995 FMMT596 O ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L VALUE UNIT VcBO -220 V Collector-Emitter Voltage V CEO . -200 Emitter-Base Voltage V EBO Peak Pulse Current 'c m Collector-Base Voltage

K 3911

Abstract: n3220
Contextual Info: ' ZETEX SEMICONDUCTORS U U. I *aa •iSD D ^70570 0 0 0 5 7 1 e 3 ■ ZETB 95D 0 5 7 1 9 T-39-11 N-channel enhancement mode vertical DMOS FET ZV N 3220 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown • Excellent temperature stability

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR BFN38 ISSU E 4 - JANUARY 1996 O FEATURES: * High VCE0 and Low saturation voltage APPLICATIONS: * Suitable for video output stages in TV sets * Switching power supplies C O M PLEM EN TA RY TYPE - BFN39 PARTM ARKING DETAILS - BFN38