THERMAL SIMULATION OF IC PACKAGE Search Results

Contextual Info: Agilent EEsof EDA W2349EP/ET ADS Electro-Thermal Simulator Data Sheet Temperature-Aware Circuit Simulation for RFIC and MMIC Design As higher power devices are integrated into smaller packages, thermal issues cause performance degradation, reliability problems, and even failures. Modeling thermal

TDA4601

Abstract: BY295 BY258 TDA 4601 BY258/200 tda 2032 C2540 i c tda 4601 voltage TDA4601B 4601
Contextual Info: TDA4601 SWITCH-MODE POWER SUPPLY CONTROLLER . . . LOW START-UP CURRENT DIRECT CONTROL OF SWITCHING TRANSISTOR COLLECTOR CURRENT PROPORTIONAL TO BASE-CURRENT INPUT REVERSE-GOING LINEAR OVERLOAD CHARACTERISTIC CURVE SIP9 Plastic Package ORDER CODE : TDA4601

TRANSISTOR MARKING YB

Abstract: TSFP-4 BFP405F CJE marking diode
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

marking ams

Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

an9922

Abstract: mlf 0.3mm pitch JESD51-3 JESD51-5 JESD51-7 MO220 TB379
Contextual Info: Thermal Characterization and Board Level Modeling of the RSLIC18 in the MLFP Package TM Application Note October 2001 AN9922 Author: Doug Bruss Introduction In most circuit designs realestate is a premium. This is especially true for the new generation of Home

TRANSISTOR MARKING FA

Abstract: EHA07307 CJE marking diode
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

EHA07307

Abstract: CJE marking diode
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

55 ic Sot-343

Abstract: marking 17 sot343 START499ETR st P 1806 START499E start499etr spice
Contextual Info: START499ETR NPN RF silicon transistor Features • High efficiency ■ High gain ■ Linear and non linear operation ■ Transition frequency 42 GHz ■ Ultra miniature SOT-343 SC70 lead free package SOT-343 Applications ■ PA for dect or PHS ■ PA stage for wireless LAN

Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

TRANSISTOR MARKING YB

Abstract: BFP405F marking al
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

7661 infineon

Abstract: BFP420F
Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP405F

Abstract: BFP420F
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP420F

Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP405F

Abstract: BFP420F TSFP-4
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

TRANSISTOR MARKING YB

Abstract: BFP420F MARKING 1G TRANSISTOR
Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ms = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

74ls111

Abstract: 2SA872 spice 74LS122 spice model hitachi mosfet power amplifier audio application BC240 hitachi mosfet audio application note 74ls221 Spice 74LS123 spice 2sk2685 spice spice 74ls00
Contextual Info: INDEX GENERAL General Information Sales Locations Semiconductor Packages FLAT PANEL CONTROLLER / DRIVER Liquid Crystal Display Controller MICROCONTROLLER Microcontroller General Micro. Shortform Micro. Overview Micro. Hardware Manual Micro. Program. Manual

LDMOS PA Driver IC, Motorola

Abstract: MHVIC910HR2 AN1949 RO4350
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1949/D AN1949 Mounting Method for the MHVIC910HR2 PFP-16 and Similar Surface Mount Packages Prepared by: Wendi Stemmons, Richard Wetz, Mahesh Shah, Eddie Mares, Jin–Wook Jang and Lynn Frye

VMMK-2303

Abstract: VMMK-2503 microwave propagation VMMK-2203 VMMK-2403 ka band gaas fet Package E-band mmic ka band lna VMMK-2103 VMMK-2x03
Contextual Info: GaAs-Based Surface Mount Wafer Scale Package MMICs for DC to 45 GHz Applications White Paper By: Henrik Morkner I. Introduction Packaging has always been the “Achilles Heal” of extracting the maximum microwave performance out of any IC technology. The inherent parasitic capacitance and inductance associated with bond wires, lead frames, and

FG676

Abstract: PCB footprint cqfp 132 741 smd ic cb228 footprint PCB footprint cqfp 100
Contextual Info: DataSource CD-ROM Q1-02 Contents Packaging and Thermal Characteristics Package Drawings Thermal Application Note Package Information Package Electrical Characterization Component Mass by Package Type Thermally Enhanced Packaging Moisture Sensitivity Tape and Reel

infineon AN077

Abstract: AN077 BFR193L3 BFR380L3
Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 • Low voltage operation 1 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

Contextual Info: BFR380L3 NPN Silicon RF Transistor • High current capability and low noise figure for wide dynamic range 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz • Pb-free RoHS compliant package

NTE7154

Abstract: I2 200-5 transistor 1005 oj
Contextual Info: NTE7154 Integrated Circuit Control Circuit for Switch Mode Power Supplies using MOS Transistors Description: The NTE7154 is an integrated circuit in an 8–Lead DIP type package which controls the MOS power transistor and performs all necessary regulation and monitoring functions in free running flyback converters. Since good load regulation over a wide load range is attained, this device is particularly suitable for consumer as well as industrial power supplies.