THERMAL RUNAWAY IN RECTIFIER Search Results
THERMAL RUNAWAY IN RECTIFIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| 54LS224AJ/B |
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54LS224 - 64-Bit FIFO Memories |
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| PQU650M-F-COVER | Murata Manufacturing Co Ltd | PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical | |||
| CRG11B |
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General-purpose diode, 400 V, 0.4 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CRG10A |
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General-purpose diode, 600 V, 0.7 A , Rectifier Diode, S-FLAT | Datasheet | ||
| CMG03A |
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General-purpose diode, 600 V, 2 A , Rectifier Diode, M-FLAT | Datasheet |
THERMAL RUNAWAY IN RECTIFIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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STO-220Contextual Info: SHINDENGEN Shottky Rectifiers SBD DF15JC10 100V 15A Dual OUTLINE DIMENSIONS Case : STO-220 Unit : mm FEATURES 1. Low IR 2. Avoid thermal runaway 3. Available in the STO-220 lead type and surface mount type APPLICATION 1. Secondary rectifiers in notebook PC, |
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DF15JC10 STO-220 STO-220 | |
DF20JC10Contextual Info: SHINDENGEN Shottky Rectifiers SBD DF20JC10 100V 20A Dual OUTLINE DIMENSIONS Case : STO-220 Unit : mm FEATURES 1. Low IR 2. Avoid thermal runaway 3. Available in the STO-220 lead type and surface mount type APPLICATION 1. Secondary rectifiers in notebook PC, |
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DF20JC10 STO-220 STO-220 DF20JC10 | |
DF30JC10
Abstract: 30A shottky 50V
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DF30JC10 STO-220 STO-220 DF30JC10 30A shottky 50V | |
1N5817
Abstract: 1N5818 1N5819
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1N5817 1N5819 DO-41 1N5817 1N5818 1N5818 1N5819 | |
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Contextual Info: SB120-SB1100 SB120 - SB1100 Features • 1.0 ampere operation at TA = 75°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 COLOR BAND DENOTES CATHODE Schottky Rectifiers |
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SB120-SB1100 SB120 SB1100 DO-41 | |
sb340 diode
Abstract: SB360 SB320-SB3100 SB360 diode SB3100 SB320
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SB320 SB3100 DO-201AD SB380-SB3100 SB320-SB340 SB350-SB360 SB320 SB360 SB320-SB3100 sb340 diode SB360 SB320-SB3100 SB360 diode SB3100 | |
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Contextual Info: SB320-SB3100 SB320 - SB3100 Features • 3.0 ampere operation at TA = 75°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers |
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SB320-SB3100 SB320 SB3100 DO-201AD 40lopment. | |
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Contextual Info: SB120-SB1100 SB120 - SB1100 Features • 1.0 ampere operation at TA = 75°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 COLOR BAND DENOTES CATHODE 1.0 Ampere Schottky Barrier Rectifiers |
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SB120-SB1100 SB120 SB1100 DO-41 | |
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Contextual Info: FR 151G FR 157G THRU FAST RECOVERYGLASS PASSIVATED RECTIFIERS DO-2Q4AC DO-15 FEATURES: • High temperature bonded construction 0.140(3.6) 0.104(2.6) DIA. • Fast switching for use in hugh frequency circuit • No thermal runaway at 1.5 Amp. Current Ta=55t: |
OCR Scan |
DO-15) MIL-STD-202, FR151G FR157G | |
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Contextual Info: FR201G FR207G THRU FAST RECOVERYGLASS PASSIVATED RECTIFIERS FEATURES: DQ-204AC DQ-15 • High temperature bonded construction 0.140(3.6) 0.104(2.6) DIA. • Fast switching for use in high frequency circuit • No thermal runaway at 2.0 Amp. Current Ta=55°C |
OCR Scan |
FR201G FR207G DQ-204AC DQ-15) MIL-STD-202, millimete65 FR201G | |
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Contextual Info: FR101G FR107G THRU FAST RECOVERYGLASS PASSIVATED RECTIFIERS DO-2Q4AL DO-41 FEATURES: • High temperature bonded construction 0.107(2.7) 0.080(2.0) DIA. • Fast switching for use in high frequency circuit • No thermal runaway at 1 Amp. Current Ta=55°C |
OCR Scan |
FR101G FR107G DO-41) MIL-STD-202, | |
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Contextual Info: FR 151G FR 157G THRU FAST RECOVERYGLASS PASSIVATED RECTIFIERS DO-2Q4AC DO-15 FEATURES: • High temperature bonded construction 0.140(3.6) 0.104(2.6) DIA. • Fast switching for use in hugh frequency circuit • No thermal runaway at 1.5 Amp. Current Ta=55t: |
OCR Scan |
DO-15) MIL-STD-202, FR151G FR157G | |
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Contextual Info: FR 151G S THRU FR 157GS FAST RECOVERYGLASS PASSIVATED RECTIFIERS DO-2Q4AUDO-41 FEATURES: 0.107 2.7) 0.080(2.0) DIA. • High temperature bonded construction • Fast switching for use in hugh frequency circuit • No thermal runaway at 1.5 Amp. Current Ta=55t: |
OCR Scan |
157GS DO-2Q4AUDO-41) MIL-STD-202, FR151GS FR157GS | |
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Contextual Info: FR101G FR107G THRU FAST RECOVERYGLASS PASSIVATED RECTIFIERS DO-2Q4AL DO-41 FEATURES: • High temperature bonded construction 0.107(2.7) 0.080(2.0) DIA. • Fast switching for use in high frequency circuit • No thermal runaway at 1 Amp. Current Ta=55°C |
OCR Scan |
FR101G FR107G DO-41) MIL-STD-202, | |
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N5408Contextual Info: SEMICONDUCTOR 1N5400 - 1 N5408 Features 1.0 min • 3.0 ampere operation at TA = 7 5 °C with no thermal runaway. 25.4; Dimensions in inelies (mmj • High current capability. • Low leakage. 0.375 (9.53; 0.2S5 (7.24; DO-201 AD COLOR BAND DENOTES CATHODE |
OCR Scan |
1N5400-1N5408 1N5400 N5408 DO-201 N5408 | |
N5399Contextual Info: SEMICONDUCTOR i 1N5391 -1 N5399 Features 1.0 iron • 1.5 ampere operation at TA = 70°C with no thermal runaway. 25.4> Dimensions in inches (mm • High current capability. 0.300 17.621 0.230 (5.84) • Low leakage. DO-15 COLOR BAND DENOTES CATHODE 0.140 (3.56) |
OCR Scan |
1N5391-1N5399 1N5391 N5399 DO-15 FAIRS00409 N5399 | |
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Contextual Info: FR201 FR207 THRU FAST RECOVERY SILICON RECTIFIERS FEATURES: DQ-204AC DQ-15 • High temperature bonded construction 0.140(3.6) 0.104(2.6) DIA. • Fast switching for use in high frequency circuit • No thermal runaway at 2.0 Amp. Current Ta=55°C • High temperature soldering guaranteed : 250 °C /10 seconds, |
OCR Scan |
FR201 FR207 DQ-204AC DQ-15) MIL-STD-202, FR201 | |
1N54001
Abstract: n5408
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OCR Scan |
1N5400-1N5408 1N5400 N5408 1N54001 n5408 | |
1N5393Contextual Info: 1N5393 / 1N5397 General-Purpose Rectifiers Features • 1.5 A Operation at TA = 75°C with No Thermal Runaway • High Current Capability • Low Leakage DO-15 Color Band Denotes Cathode Absolute Maximum Ratings 1 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The |
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1N5393 1N5397 DO-15 1N5393 | |
Valere
Abstract: H1250C CA210203104 48v output rectifiers circuit diagrams Valere NIC1000 CA312181178 NIC1000 H2000A 10 amp fuse NIC1001
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H-TRIO-02 1-877-Valere1 Valere H1250C CA210203104 48v output rectifiers circuit diagrams Valere NIC1000 CA312181178 NIC1000 H2000A 10 amp fuse NIC1001 | |
1n5819 equivalent
Abstract: 1n5819
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1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent | |
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Contextual Info: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation |
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1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821 | |
1n5819 equivalentContextual Info: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation |
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1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent | |
1n5819 equivalent
Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
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1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG | |