THC 472 Search Results

wiring diagram audio amplifier ic 6283

Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Contextual Info: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor

FPF21C8060UA-92

Abstract: circuit for driving address electrodes PDP plasma display address electrode driving pdp scan driver 6072 TUBE FPF21C8060UA-02 fujitsu display 30 pin connector Plasma Display Panel timing control THC 472 VHR-5N
Contextual Info: July 1994 Edition 2.0 DATA SHEET FPF21C8060UA-92 FULL COLOR PLASMA DISPLAY FULL COLOR PLASMA DISPLAY DESCRIPTION FEATURES The Fujitsu plasma display unit consists of an AC-type gas discharge plasma panel with memory function based on Fujitsu’s unique panel technologies and its driving circuit.

Contextual Info: IBM11D2480BA IBM11E2480BA 2M x 36 ECC-on-SIMM 4Features • 72 -P in J E D E C -S ta n d a rd S ing le In-Line M e m o ry M o du le • P erform ance: S ingle-error-correct S E C high-speed E C C algorithm Single 5 V 0 .2 5 V P ow er Supply All inputs & outputs are fully T T L & C M O S

sharp lcd t-con

Abstract: LQ0DZC2291 LQ0DZ Timing controller T-con SHARP IR3 800RGB wVGA gamma ray color search circuit lcd t-con 1000H
Contextual Info: RECORDS OF REVISION Type No：LQ0DZC2291 SPEC No. Date NO. LCY-09033A 2009. 06.05 LCY09033B 2009.12.8 PAGE SUMMARY NOTE - - 1st Issue 22 Connection of terminal STHR/STHL and 2nd Issue LCD. Note: In this ASIC Specification, binary notation, decimal notation and hexadecimal notation are described

D2PAK1

Contextual Info: Cherry Semiconductor offers a wide variety of traditional packages in addition to more advanced package technology. Flip Chip is an example of the advanced packaging technologies offered by Cherry Semiconductor. An application note included in this section explains the Flip Chip manufacturing process and the methods available for Flip Chip assembly.

XN357

Contextual Info: LMS12 12-bit Cascadable M ultip lie r-S u m m e r H IM □ 12 x 12-bit Multiplier with Pipelined 26-bit Output Summer □ Summer has 26-bit Input Port Fully Independent from Multiplier Inputs □ Cascadable to Form Video Rate FIR Filter with 3-bit Headroom

Contextual Info: SA M S U N G E L E C T R O N I C S INC b4E D • 7 cî b m 4 5 KMM584100N Ü G 1 4 7 5 3 2bl DRAM MODULES 4 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584100N is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung

CY7C1312BV18

Abstract: CY7C1314BV18 CY7C1312
Contextual Info: CY7C1312BV18 CY7C1314BV18 18 Mbit QDR II SRAM Two Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth ■ 2-word burst on all accesses

Contextual Info: CMOS SRAM KM6465B 16Kx4Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12, 15, 2 0 ,2 5 ns Max. T h e K M 6 4 6 5 B is a 6 5 ,5 3 6 -b it • Low Pow er Dissipation Random Access Memory organized as 16,3 84 words by Standby (TTL) h igh-speed S tatic

IBF20

Abstract: IC ST 201A 600PE80
Contextual Info: INTERNATIONAL RECTIFIER "4T ß F § 4 Ö S S 4 S a ODD47S4 1 Data Sheet No. PD-3.073 IN T E R N A T I O N A L I“ R R E C T I F I E R 'T'j.s''ÆO 940A RMS Hockey Puk Thyristors 600 PE SERIES Description The 60 0 P E series of converter type hockey puk thyristors use

HYM536200AM

Abstract: HYM536200A HYM536200AM/ALM WE005 HYM536200Aibm pc 700M/ALM
Contextual Info: •HYUNDAI SEMICONDUCTOR HYM536200A Series 2M X 36-blt CM O S DRAM MODULE PRELIMINARY DESCRIPTION The HYM536200A is a 2M x 36-bit Fast page mode C M O S DRAM module consisting of sixteen HY514400A in 20/26 pin SO J and eight HY531000A in 20/26 pin SO J on a 72 pin glass-epoxy printed circuit board, 0.2^uF decoupling

47SB

Abstract: 600PE160 600PE180 TP 8370 600PE80 6425 ma 8920 600PE100 600PE120 600PE140
Contextual Info: INTERNATIONAL RECTIFIER 4T DeT| i|ÛS545a 00 04 7 5 4 Data Sheet No. PD-3.073 IN T E R N A T IO N A L R E C T IF IE R I R 940A RMS Hockey Puk Thyristors 600PE SERIES Description T he 6 0 0 P E series o f converter type hockey p u k thyristors use centre am plified gate junction technology. These devices with

4b/5b encoder

Abstract: HD -1553 CMOS manchester encoder-decoder STE100P
Contextual Info: STE100P 10/100 FAST ETHERNET 3.3V TRANSCEIVER PRODUCT PREVIEW 1.0 DESCRIPTION The STE100P, also referred to as STEPHY1, is a high performance Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX applications. It was designed with advanced CMOS technology to

T2D 48

Abstract: STE100P stmicroelectronics "serial eeprom" PQFP64 ST4200 t2a10
Contextual Info: STE100P 10/100 FAST ETHERNET 3.3V TRANSCEIVER PRODUCT PREVIEW 1.0 DESCRIPTION The STE100P, also referred to as STEPHY1, is a high performance Fast Ethernet physical layer interface for 10BASE-T and 100BASE-TX applications. It was designed with advanced CMOS technology to

HD4942

Contextual Info: Preliminary HD49421FS PIP Controller for NTSC with On-Chip A/D and D/A Converters Description Features T he H D 4 9 4 2 1 F S is a m em ory co n tr o lle r for NTSC -type picture-in-picture (PIP) system s. The chip integrates one 6-bit A /D converter, two 7-bit

CY7C1310BV18

Abstract: CY7C1312BV18 CY7C1314BV18 CY7C1910BV18
Contextual Info: CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit QDR -II SRAM 2 Word Burst Architecture Features Functional Description Separate Independent read and write data ports ❐ Supports concurrent transactions • 250 MHz clock for high bandwidth ■ 2 Word Burst on all accesses

Contextual Info: CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit QDR-II SRAM 2-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 250-MHz clock for high bandwidth

CY7C1312BV18-167BZC

Contextual Info: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth

CY7C1310BV18

Abstract: CY7C1312BV18 CY7C1314BV18 CY7C1910BV18
Contextual Info: CY7C1310BV18 CY7C1910BV18 CY7C1312BV18 CY7C1314BV18 18-Mbit QDR-II SRAM 2-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 250-MHz clock for high bandwidth

Contextual Info: CY7C1312BV18 CY7C1314BV18 18-Mbit QDR II SRAM Two-Word Burst Architecture 18-Mbit QDR® II SRAM Two-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth

FT6110

Abstract: si4844
Contextual Info: PRECISION SURFACE MOUNT INOUCTORS • HIGH a■ HIGH SRF « HIGH CURRENT • TIGHT TOLERANCE - MADE IN USA C H O K E C O IL S 0 8 0 3 S E R IE S 1 62 Typ mm 1.80 1. 12 Max Max 1 02 ¡ Max ! 0.76 Typ P a rt N um ber 0603GlR4*E 0603G!R5*E 0603GIR8*E 06O3G2R0*E

CY7C1310BV18

Abstract: CY7C1312BV18 CY7C1314BV18 CY7C1910BV18 CY7C1314BV18-167BZXI
Contextual Info: CY7C1310BV18, CY7C1910BV18 CY7C1312BV18, CY7C1314BV18 18-Mbit QDR -II SRAM 2-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 250 MHz clock for high bandwidth

SANYO POSCAP 4TPB220M

Abstract: SANYO 16TQC100M 6TPU10M Sanyo date code marking sanyo capacitors 6SVPS120M SANYO POSCAP 6sp150M TAE 13005 2TPLF470M5 2R5TPF470M6L
Contextual Info: SANYO Capacitors General Catalog 2008-10 Aluminum Electrolytic Capacitors Aluminum Solid Capacitors with Conductive Polymer Aluminum Solid Capacitors with Organic Semiconductive Electrolyte Aluminum Electrolytic Capacitors Aluminum Electrolytic Capacitors with