TGF42 Search Results

4202 BD TRANSISTOR

Abstract: 4202 BD TRANSISTOR parameter BV 501 TGF4230 TGF4230-EEU bond wire gold
Contextual Info: T R I Q U I N T S E M TGF4230-EEU I C O N D U C 1.2mm Discrete HFET ● ● ● ● ● ● 1200 µm X 0.5 µm HFET T O R , I N C . 4230 Nominal Pout of 28.5- dBm at 8.5- GHz Nominal Gain of 10.0- dB at 8.5- GHz Nominal PAE of 55% at 8.5 - GHz Suitable for High-Reliability Applications

VP 1176 datasheet

Abstract: LD 757 ps TGF4250-EEU 3 DG 1008
Contextual Info: T R I Q U I N T S E M TGF4250-EEU I C O N D U C 4.8 mm Discr ete HFET ● ● ● ● ● ● 4800 µm x 0.5 µm HFET T O R , I N C . 4250 Nominal Pout of 34- dBm at 8.5- GHz Nominal Gain of 8.5- dB at 8.5- GHz Nominal PAE of 53% at 8.5 - GHz Suitable for high reliability applications

Contextual Info: H I U I N S E M I C O N D U C T O R , T IQSt 9.6mm Discrete HFET TGF4260-EPU 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz % Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm

TGF4230-EEU

Contextual Info: Product Data Sheet March 20, 2001 Discrete HFET TGF4230-EEU Key Features and Performance • • • • • • 1200 µm x 0.5 µm HFET Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz Suitable for high reliability applications

4232 gm

Abstract: UM 3491 TGF4240-SCC
Contextual Info: Product Data Sheet March 31, 2003 2.4 mm Discrete HFET TGF4240-SCC Key Features and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz

TGF4260-EPU

Contextual Info: H I Q U I N S T E M I C O N D U C T R , I N C 4260 9.6mm Discrete HFET TGF4260-EPU O n 9600 pm x 0.5 pm Nominal Pout of 37-dBm at 6.0 GHz Nominal Gain of 9.5-dB at 6.0 GHz # Nominal PAE of 52% at 6.0 GHz Suitable for high reliability applications # 0,572 x 2,324 x 0,102 mm

TGF4260-EPU

Contextual Info: R I Q U I N T S E M I TGF4260-EPU C O N D U C 9.6mm Discrete HFET ● ● ● ● ● ● T O R , I N C . 4260 9600 m x 0.5 m Nominal Pout of 37 - dBm at 6.0 GHz Nominal Gain of 9.5 - dB at 6.0 GHz Nominal PAE of 52 % at 6.0 GHz Suitable for high reliability applications

Contextual Info: T R I Q U I N T S E M I C O N D U C T O R , TO 1.2mm Discrete HFET TGF4230-EEU # 1200 im X 0.5 (im HFET Nominal Pout of 28.5-dBm at 8.5-GHz Nominal Gain of 10.0-dB at 8.5-GHz # Nominal PAE of 55% at 8.5-GHz I N C 4230 O Suitable for High-Reliability Applications

Contextual Info: S E M I C O N D U C T O R , I N C TGF4250-EEU 4800 iim x 0.5 Jim HFET Nominal Pout of 34-dBm at 8.5-GHz Nominal Gain of 8.5-dB at 8.5-GHz # Nominal PAE of 53% at 8.5-GHz O Suitable for high reliability applications # 0,572 x 1,334 x 0,102 mm 0.023 x 0.053 x 0.004 in.

VP 1176

Abstract: VP 1176 datasheet TGF4250-EEU TriQuint Semiconductor bvgs VP+1176
Contextual Info: Product Data Sheet March 16, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications

i678

Contextual Info: TGF4250-SCC, POWER MICROWAVE HFET A U G U S T 1994 0.5 |am x 1200 |am FET Output Power 28 dBm at 8.5 GHz Power Added Efficiency 50% at 8.5GHz ?!"!"!?!?! !?!?!?!?!?!?! 8.5dB Typical Large Signal Gain Size: 0,609 x 0,737 x 0,102 mm 0.024 x 0.029 x 0.004 in

TGF4230-SCC

Contextual Info: Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm 0.024 x 0.029 x

Contextual Info: Product Data Sheet March 31, 2003 2.4 mm Discrete HFET TGF4240-SCC Key Features and Performance • • • • • • • 2400 µm x 0.5 µm HFET Nominal Pout of 31.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 56 % at 8.5 GHz Frequency Range: DC - 12 GHz

TGF4240-EPU

Contextual Info: R I Q U I N T S E M I TGF4240-EPU C O N D U C 2.4mm Discrete HFET ● ● ● ● ● ● 2400 m x 0.5 m T O R , I N C . 4240 Nominal Pout of 31.5 - dBm at 8.5 GHz Nominal Gain of 10 - dB at 8.5 GHz Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications

17417

Abstract: TGF4250-EEU
Contextual Info: S-Parameter Data for TGF4250-EEU # GHZ S MA R 50 ! TGF4250-EEU ! VD=8V, ID=30%IDSS Frequency S11 S21 S12 S22 GHz MAG ANG(o) MAG ANG(o) MAG ANG(o) MAG ANG(o) 0.5 0.943 -106.98 9.887 122.68 0.026 35.1 0.533 -163.66 1 0.932 -139.41 5.725 103.61 0.03 19.75 0.591

TGF4240-EPU

Contextual Info: T R I Q U I N S T E M I C TGF4240-EPU O N D U C T 2.4mm Discrete HFET 2400 pm x 0.5 \im Nominal Pout of 31.5-dBm at 8.5 GHz Nominal Gain of 10-dB at 8.5 GHz # Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications 0,572 x 0,978 x 0,102 mm

1FT sot23-6

Abstract: TGF4260 TGF4260-SCC UM 7108 F
Contextual Info: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz

TGF4212

Contextual Info: Texas Instruments TGF4212 Medium-Power Microwave GaAs FET Features • 29-dBm pulsed power output at 1-dB gain compression 10 GHz ■ 40% CW power-added efficiency (10 GHz) ■ Low thermal impedance of 18°C/W ■ Recessed 1/2-^m gate structure ■ Via grounds for source terminals

Contextual Info: T H I Q U I N 4240 S E M I C O N D U C T O R , T TGF4240-EPU 2.4mm Discrete HFET £ 2400 pm x 0.5 Jim Nominal Pout of 31.5-dBm at 8.5 GHz Nominal Gain of 10-dB at 8.5 GHz # Nominal PAE of 56% at 8.5 GHz Suitable for high reliability applications 0,572 x 0,978 x 0,102 mm

Contextual Info: Product Data Sheet December 16, 2002 DC - 12 GHz Discrete HFET TGF4230-SCC Key Features and Performance • • • • • • Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm 0.024 x 0.029 x

Contextual Info: Product Data Sheet March 31, 2003 9.6 mm Discrete HFET TGF4260-SCC Key Features and Performance • • • • • • • 9600 µm x 0.5 µm HFET Nominal Pout of 37dBm at 6 GHz Nominal Gain of 9.5dB at 6 GHz Nominal PAE of 52% at 6 GHz Frequency Range: DC - 10.5 GHz

VP 1176 datasheet

Abstract: TGF4250-SCC VP 1176
Contextual Info: Product Data Sheet December 16, 2002 DC - 10.5 GHz Discrete HFET TGF4250-SCC Key Features and Performance • • • • • • • Nominal Pout of 34 dBm at 8.5 GHz Nominal Gain of 8.5 dB at 8.5 GHz Nominal PAE of 53% at 8.5 GHz Suitable for high reliability applications

Contextual Info: Product Data Sheet February 22, 2001 Discrete HFET TGF4250-EEU Key Features and Performance • • • • • • 4800µm x 0.5 µm FET Nominal Pout of 34dBm at 8.5GHz Nominal Gain of 8.5dB at 8.5GHz Nominal PAE of 53% at 8.5GHz Suitable for high reliability applications

402 rp transistor

Abstract: TGF4230-EPU
Contextual Info: TGF4230-EPU, POWER MICROWAVE HFET • 0.5 |am x 1200 |am FET • 28 dBm Output Power at 1-dB Gain Compression at 8.5 GHz • Power Added Efficiency 50% at 8.5GHz • 8.5dB Typical Large Signal Gain at 8.5GHz