TFK U B Search Results

Contextual Info: •n ip tfk ' {<p( i( _>| CUSTOM PART ORDER FORM C ry sta ls COMPANY INFORMATION F o r a c u s t o m p a r t n u m b e r , f i l l o u t t h e f o r m b e lo w a n d f a x It t o u s a t ( 7 1 4 ) 4 3 3 - 1 2 3 4 . Your Name: Company Name: Phone Number:

BA1310

Abstract: BAI310 560mVrms 3AA1
Contextual Info: . R .o h m QUALITY- RELIABILITY BA i 310 ;l. s P L L JjxK ft iStifFI L t FM 7 JU9 J U v ? ^ (Physical Dimensions U /j f S f c H & B ilC r ? « P L L # j£ t f)fc tfK æ¿ft u % r - r « £ fcs * n « . s . b < K t < r o • « ft (Features) j. PLi.-^^vlîîFnwrwiHiffêv ; i / ; ^ b

DSX151G

Contextual Info: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out­ standing stability and high reliability. Xs DV/K-Xu

tfk 914

Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
Contextual Info: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n

Contextual Info: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o­ m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF

TFK U B

Abstract: R75n
Contextual Info: Thh dD«urn«n1 re t h i pr«p«rty «f A m pha io l C w p a n rlk n and fs d*nv«r«d an R E V IS IO N S +h« e xp ress c an dR ia n m o i fh ¡e r o + +a be tfk c b s a d , rap ra dM csd o r u s s d . In whale o r In pari, ta r manu Tod urs ar M l« by « ny«i» al hcr m an Am phm nl

IN5363B

Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Contextual Info: Cross Reference Every care has b een taken in compiling this cross referen­ ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any

diode B14A

Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • O lSO O ^b P O Q Ib S l S TFK 3070 D TTIUilPiiSMKIIKI electronic Creato*1«chn0t0Q«s Preliminary specifications NPN Silicon Darlington Power Transistor , 7 * * 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

diode tfk s 220

Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Contextual Info: 17E I I B^SDDRb ODD^bS^ 3 • m ilF iy iim iM electronic Crt*tiv«1«chnolo$tt ALGG i l ? ■ TFK 3080 D TELEFUNKEN ELECTRONIC [ Preliminary specifications [ NPN Silicon Tripleton Power Transistor T-33-3£~ Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

transistor Bc 540

Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt

TFK 450 B2

Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W

tfk 19

Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)

TFK 1n4148

Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
Contextual Info: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes

42t sot-23

Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

TFK BC

Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

fr 309

Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen

B861

Abstract: TFK S 1 86 P
Contextual Info: 3 TM2S DRAKJM3 iS LNPISLJSHED. C0PYR2GHT IS Sf AMP JhCORPCW/MfD. D A AMP J4?J-â ftfV 03WAY94 i_X-JUN-96 15i58r25 oqpZMSJ /fJl^dâpttt23/d^]?23Aj.Æipoi«r/U,i?jfc*-d fiC 1 2 REVISIONS b 86 E R E V IS E D £ REDRAWN PER 0 7 2 0 - 0 8 5 6 - 3 5 17JUNSE QfCS WJV

TFK um 175

Abstract: tfk 635
Contextual Info: Temic S e m i c o n d u c t o r s Tape and Reel Standards T EM IC offers T-l 3 mm and T-I-V4 (5 mm) IR em itters and detectors packaged on tape. The follow ing specifica­ tion is based on IEC publication 286. taking into account the industrial requirem ents for autom atic insertion.

BA532

Abstract: IS002 BA521U BA-532 ba521
Contextual Info: 1 3 .2 V • BA521U, t -ZV7i. ft - 7 > 7 ” Physical Dimensions) IC'C^o 6W O-y AO-iM v h /\° 7 I fflic ¡ft St L A : • - 5 .8 W BA521 QUALITY RELIABILITY ì f i U G O £ t -, -f=?* y yO *: - * K (!£•(£ : imi) 3.6±C.2 M (Features) 1. ^ m * 5 .8 W (T M D = IO % )x ,V:;ii!i!>(r>5dB)T'«te^„

e1030

Contextual Info: A T 2 3 LO OD fO N 27 .6 O / 7t 7i E T3 o 2mmcoizmX'&']æ t? i > ^ n 3 [^] sr £ f/tS^O vfSSjÆ L “C «fe-â-C* £ i, 'J -t 7' ^ ^ 'V 3> ^ ± ^ ^ h ¿± sy =& 1 7 3 6 3 0 , 7 73637 O »— I cc NOTE ; /J^TO BE M E A S U R E D B E T W E E N P a ^ AND 2 ¿ ^ T O BE M A TE WI TH C A P HSG S M O O T H L V

3 tfk 206

Abstract: SHINDENGEN DIODE
Contextual Info: ÿ i ' t - K ï v - i -;u 3 Pha>e Bridge Diode Diode Module mmtt'ikm S15VT o u t l i n e d im e n s io n s S15VTA 800V 15A •S Q IP A '^ -y •  ÎH Œ - B l FSM •y'jy V T A iM : ? ffl i t •I73> im-<yn—? •fa , RATINGS Absolute Maximum Ratings