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    TFK U B Search Results

    TFK U B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    DSX151G

    Contextual Info: CRYSTAL RESONATORS SMD Type H ll£tS !!7K IiJS i!i? DSX151G SERIES □ S X I5 lG iz K IltlS ]T -£ tfK U /c tz ^5 + 4 7 The DSX151G is a compact product featuring high resistance to the environment, out­ standing stability and high reliability. Xs DV/K-Xu


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    DSX151G DSX151GA DSX151GS 60Qmax. 200sec rCl83' PDF

    tfk 914

    Abstract: TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100
    Contextual Info: A tfK Q M m an A M P com pany Radar Pulsed Power Transistor, 30W, 1.0ms Pulse, 10% Duty 1.2-1.4 GHz PH1214-30EL V2.00 820 Features • • • • • • • • C20B3 NPN Silicon M icrow ave P ow er T ran sisto r C o m m o n Base C o n fig u ratio n B ro a d b an d Class C O p e ra tio n


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    PH1214-30EL C20B3) PH1214-30EL tfk 914 TFK 914 D transistor 81 120 w 63 cmi Transistor Mt 100 PDF

    Contextual Info: Toggle sw itch e s TL FE A T U R E S G v tfK c d to m - s - s m • FnvYorm C fitiXoo f sealing • • 1,2, an d 4 p o tc cvcvfty. • Standard ondpvQ to unlock fevers. • 2 an d 3 po sitio n , m atototo* ct an d m o­ m entary toggle actio n • Temperaturerange: -6 5 "F lo +1&TF


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    11GVDC arr08-l25 Hp-125VAC; amps-125 amps-120 Hp-125 PDF

    transistor Bc 540

    Abstract: tfk 540 TFK 212 TRANSISTOR BC 212 bc 212 BC212 BC 540 TRANSISTOR
    Contextual Info: SHi2:ium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and driver stages Besondere Merkmale: Features: • • • • Verlustleistung 300 mW • In G ruppen so rtie rt


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    TFK 450 B2

    Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
    Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W


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    TFK 1n4148

    Abstract: TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk
    Contextual Info: VISHAY ▼ Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Although every effort has been made to assure accurate and reliable substitutions, Vishay Telefunken assumes


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    1N3600 1N3604 1N4148 1N914 1N4150 1N4151 1N4153 1N4154 TFK 1n4148 TFK BAV20 TFK BAV21 1N53488 bzx850 BZX85g BZV85-C6V8 vishay 1N458A substitution BZXB4-C51 1N4148 tfk PDF

    42t sot-23

    Abstract: BCX716 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715
    Contextual Info: l Ü F Gestempeltmit: BCW61ABCW61B BCW61C BCW61D BCX716 BCX71H BCX71J BCX71K Q O lli C l M a rk e d w ith : B» BB IC BD BO BH BJ BK D uW U l DPV11 * B l» A / I Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar AF Transistor Anwendungen: Vorstufen und Schalter in Dick- und Dünnfilmschaltungen


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    BCW61B BCX716 BCX71J BCW60 42t sot-23 BCD Schalter TFK BB transistor BC 458 BCX 458 TFK AF tfk s 154 p am/M29F002BB(45/55/70/90/TC5117800ANJ/BCX716 tfk 715 PDF

    TFK BC

    Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
    Contextual Info: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:


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    BC108 BC109 TFK BC TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330 PDF

    fr 309

    Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
    Contextual Info: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen


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    BC179 fr 309 BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731 PDF

    B861

    Abstract: TFK S 1 86 P
    Contextual Info: 3 TM2S DRAKJM3 iS LNPISLJSHED. C0PYR2GHT IS Sf AMP JhCORPCW/MfD. D A AMP J4?J-â ftfV 03WAY94 i_X-JUN-96 15i58r25 oqpZMSJ /fJl^dâpttt23/d^]?23Aj.Æipoi«r/U,i?jfc*-d fiC 1 2 REVISIONS b 86 E R E V IS E D £ REDRAWN PER 0 7 2 0 - 0 8 5 6 - 3 5 17JUNSE QfCS WJV


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    15i58r25 pttt23/d^ 17JUNSE 07hEftWJS£ -B-S25 B861 TFK S 1 86 P PDF

    TFK um 175

    Abstract: tfk 635
    Contextual Info: Temic S e m i c o n d u c t o r s Tape and Reel Standards T EM IC offers T-l 3 mm and T-I-V4 (5 mm) IR em itters and detectors packaged on tape. The follow ing specifica­ tion is based on IEC publication 286. taking into account the industrial requirem ents for autom atic insertion.


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    BA532

    Abstract: IS002 BA521U BA-532 ba521
    Contextual Info: 1 3 .2 V • BA521U, t -ZV7i. ft - 7 > 7 ” Physical Dimensions) IC'C^o 6W O-y AO-iM v h /\° 7 I fflic ¡ft St L A : • - 5 .8 W BA521 QUALITY RELIABILITY ì f i U G O £ t -, -f=?* y yO *: - * K (!£•(£ : imi) 3.6±C.2 M (Features) 1. ^ m * 5 .8 W (T M D = IO % )x ,V:;ii!i!>(r>5dB)T'«te^„


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    BA521U, J-XBA511A, BA532. -68fl BA532 IS002 BA521U BA-532 ba521 PDF

    e1030

    Contextual Info: A T 2 3 LO OD fO N 27 .6 O / 7t 7i E T3 o 2mmcoizmX'&']æ t? i > ^ n 3 [^] sr £ f/tS^O vfSSjÆ L “C «fe-â-C* £ i, 'J -t 7' ^ ^ 'V 3> ^ ± ^ ^ h ¿± sy =& 1 7 3 6 3 0 , 7 73637 O »— I cc NOTE ; /J^TO BE M E A S U R E D B E T W E E N P a ^ AND 2 ¿ ^ T O BE M A TE WI TH C A P HSG S M O O T H L V


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    070SERIES e1030 PDF

    transistor BF 257

    Abstract: bf414 transistor BF 414 tfk 513 BF 414 transistor BF 258 414 transistor AI-257 db258 Kleine
    Contextual Info: Silizium-PNP-Epitaxial-Planar-HF-Transistor Silicon PNP Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Features: • Kleine R ückwirkungskapazität


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    Diode BAY 54

    Abstract: tfk 341 Diode BAY 74 TFK 68 diode Diode BAY 45 TFK 341 T 74340 TFK 101 bay 68 diode Diode BAY 68
    Contextual Info: BAY 68 - BAY 69 Silizium-Epitaxial-Planar-Dioden Silicon epitaxial planar diodes Anwendungen: Sehr schnelle Schalter Applications: Very fast switches Abmessungen in mm Dimensions in mm 01.9 KATHODE CATHODE Normgehäuse Case 54 A 2 DIN 41880 JEDEC DO 35 Gewicht • Weight


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    TFK u 116

    Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
    Contextual Info: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW


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    BYV16

    Abstract: BYV 200v BYW 56 V BYV12
    Contextual Info: BYV12 ST BYV16 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Schneller Gleichrichter und Schalter z. B. für zeilenfrequenten Betrieb im Fern­ sehgerät und Schaltnetzteile. Applications: Fast rectifier and switch for example for TV-line output circuits and switch mode


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    BYV12 BYV16 BYV16 BYV 200v BYW 56 V BYV12 PDF

    rjr ce

    Abstract: BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V
    Contextual Info: BD166 BD168 BD170 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: • Verlustleistung 20 W Features: • Power dissipation 20 W


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    N125A 150mA 500mA 500mA rjr ce BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V PDF

    Contextual Info: o CO CO o Material and Finish 4 Insulator: 0 High Temp., UL94V-0-Rated *-N CO Contact: Phosphor Bronze O 3. Contact Plating Options: Standard: Gold flash on contact area, tin on soldertails, all over nickel underplate 10 CNI T- 10 30 Option: 30u" Gold on contact area,


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    UL94V-0-Rated 2002/95/EC E134345 LR78160 PDF

    BF314

    Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
    Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität


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    byw 36 v

    Abstract: BYW32 byw 32 BYW 200 TU300 byw+36+v
    Contextual Info: w ► BYW 32 Ì? BYW 36 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: S ch n e lle r G le ic h ric h te r und S ch a lte r z. B. fü r zeilenfreq uen ten B etrieb im F e rn ­ sehgerät und Schaltnetzteile. Applications: Fast re ctifie r and sw itch for exam ple for TV-line output circuits and sw itch m ode


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    c 337 25

    Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
    Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt


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    JX5417

    Abstract: diode tfk s 220 transistor b 595 PH0810-150 AF100 TFK 03
    Contextual Info: yMâcGM Æ a n A M P com pany Wireless Bipolar Power Transistor, 150W 850 - 960 MHz PH0810-150 Features • • • • D esigned for Linear A m plifier A pplications Class AB: -32 dBc Typ 3 rd 1MD at 150 W atts PEP C o m m o n E m itter C o n fig u ratio n


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    PH0810-150 5000pF JX5417 diode tfk s 220 transistor b 595 PH0810-150 AF100 TFK 03 PDF

    TFK 236

    Abstract: TFK 4 232 TAA861A schaltungen 861 taa 861 tFK 229 236 TFK 36Tfk auo 002 TAA865A
    Contextual Info: TAA 861 • TAA 861 A TAA 865 • TAA 865 A Monolithisch Integrierte Schaltungen Monolithic Integrated Circuits Anwendungen: O perationsverstärker in Regelungstechnik, NF-Schaltungen, Analog-Rechnertechnik, A u to e le ktro n ik usw. Applications: O perational am plifiers in autom atic co n tro l technique, audio circuits, analogue


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