TF S 544 Search Results

TSP50C42

Abstract: tsp50c4x TSP50C TSP50C41
Contextual Info: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this

BM30B-SRDS-G-TF

Abstract: B8B-ZR-SM3B-TF s4b-ph-sm3-tb AE01 AE02 FTP-608 FTP-628Y202 FTP-628Y302 paper sensor auto-cutter
Contextual Info: INTERFACE BOARD FTP-608 SERIES FTP-628DCL/DSL SERIES • INTERFACE 1. Centronics interface 1 Connector (CN2) Connector part number : BM30B-SRDS-G-TF (JST) or equivalent Mating connector part number : SHDR-30V-S-B (JST) or equivalent (2) Connector pin assignment

Contextual Info: ENGINEERED O^ W NENTS CO 73 ]> F |-3 3 3 3 S fl3 ' GCIDDbDl □ f ~ T -S l- tf lowprofil6 T’ L COMPATIBLE PROGRAMMABLE PULSE GENERATOR MODULE # # # # # # T ^ L input and outputs Pulse widths stable and precise 1 4 —pin DIP package .240 high Available in step resolutions from 1ns to 50ns

MT03P

Contextual Info: H igh V o lta g e • H igh S p e ed S w itc h in g T ra n s is to rs HDT series Bipolartransistors NPN Parts No. Absolute Maximum Ratings Electrical Characteristics V c eo hFE V CE V be (sat) (sat) (max) (m ax) [V] [V] 0jc fT ton ts tf (m ax) (max) (max)

programmable pulse generator

Abstract: 3333-S
Contextual Info: ENGINEERED O^ W NENTS CO 73 ]> F |-3 3 3 3 S fl3 ' GCIDDbDl □ f ~ T -S l- tf lowprofil6 T’ L COMPATIBLE PROGRAMMABLE PULSE GENERATOR MODULE # # # # # # T ^ L input and outputs Pulse widths stable and precise 1 4 —pin DIP package .240 high Available in step resolutions from 1ns to 50ns

ERD08M-15

Contextual Info: ERD08M-15I5A rsj FAST RECOVERY DIODE : Features Insulated package by fully m o ld in g . • * 7 -T V y m m m m M ost suitable fo r co lo r T .V . d am per. Connection Diagram High voltage by mesa design. • f tf S lS te High reliability : Applications High speed s w itc h in g .

ERD08M-15

Abstract: erd08 A542
Contextual Info: ERD08M-15I5A rsj FAST RECOVERY DIODE : Features Insulated package by fully m o ld in g . • * 7 -T V y m m m m M ost suitable fo r co lo r T .V . d am per. Connection Diagram High voltage by mesa design. • f tf S lS te High reliability : Applications High speed s w itc h in g .

b1207

Abstract: tf s 544 a tf s 544
Contextual Info: 4 3 THIS OPAMING IS UNPUBLISHED. C | COPYRIGHT 1â RELEASED FÛR PUBLICATION BY AMP INCORPORATED. 1 2 ,19 LOC AJ ALL RiertT5 RESERVED. REVISIONS DIST 16 J REV PER ÛG3Û-Û431-98 28QCT98 MO JC .544 MAX 1. FOR USE WITH: RIGID CABLE 2. SEE *3 R TF E PER A S T M D 1 7 1 0

TRANSISTOR bd 108

Abstract: transistor TIP 662 Horizontal-Deflection Output transformer tip 410 transistor transistor BD 325 BU108 leistungstransistoren BUY69 BU105 2N5683
Contextual Info: BU 108 NPN SIL IC O N POWER T R A N S IST O R D E S IG N E D FOR H IG H V O L T A G E C.R.T. S C A N N IN G • • • V c e x Rating — 1500 V Peak Collector Current Rating — 5 Amps Fast Switching — tf at 4.5 Am ps 0.7 Microsecond Typical Development Type

MG*Q2YS51

Contextual Info: T O S H IB A MG75Q2YS51 MG75Q2YS51 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT HIGH P O W E R SW IT C H IN G A P P L IC A T IO N S M O T O R C O N T R O L A P PL IC A T IO N S H igh Input Impedance High Speed : tf~ 0 .3 ^ s Max. Inductive Load

2SC3632

Abstract: 2SC3632-Z
Contextual Info: Silicon T r a n s is to r s 2SC 3 632,3 632 -Z NPN = U =l > h ^ ra # ^ *y^ ^ ^ ffl iüi O [H jU ifi; t ' t o V c e o = 600 V o x 'f •/ -f > / X t ° - K fIS ton, tf < 0 . 5 n °p H M & M 7 ^ t ? n f c m ' M ï < n m i m z ^ i ' T t t ' m ± m :7 ( n

scr inverter

Abstract: SCR Handbook, General electric a96 laser diode SCR Applications Handbook c14415 C144 c144 diode 12 volt dc to 220 volt ac inverter 1000 watts CI44 SCR Handbook
Contextual Info: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * IO fO o 300 <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 700 800 850 900 1000 1150 1500 R M S C U R R E N T -A M P E R E S

ail3z

Abstract: CM 6002 N transistor TCA600 tc6002 PWS10 dwot
Contextual Info: NEC M t S • 5/ — H C om poun d Transistor FN1L3Z g t x + y ^ r m & m O i'-ÌA ! mm os< JTXÌS;ìn ;& ftffi t r a t t e 2. 8+ 0. 2 Ri = 4.7 kQ) 0.65ÌJ; 1.5 B Ii? O—vw— R. ÒE o FA1L3Z t ^ > 7° ij / > 9 'J Tfèm T è £ -f t ( T a = 25 °C ) Il =1 U 9 9 •

IR 5440

Abstract: GEOY6990 Q65110A1212 5440
Contextual Info: Schmitt-Trigger IC im Smart DIL Gehäuse Schmitt-Trigger IC in Smart DIL Package Lead Pb Free Product - RoHS Compliant SFH 5440 SFH 5441 Wesentliche Merkmale Features • • • • • • • • SFH 5440: Ausgang active low SFH 5441: Ausgang active high

IR 5440

Abstract: Q65110A1212 5440
Contextual Info: Schmitt-Trigger IC im Smart DIL Gehäuse Schmitt-Trigger IC in Smart DIL Package Lead Pb Free Product - RoHS Compliant SFH 5440 SFH 5441 Wesentliche Merkmale Features • • • • • • • • SFH 5440: Ausgang active low SFH 5441: Ausgang active high

IEC60068-2-2

Abstract: PD104SM1 CIE1931 DF19K-20P-1H IEC60068-2-1 IEC60068-2-3 D104S 11.3 Diagonal Display TFT LCD lcd Data International Co., Ltd IEC60068-2-34
Contextual Info: P-511-544 V :1 P D104S M1 V ers ion : 1.0 T E C HNIC AL S P E C IF IC AT ION MODE L NO. : P D104S M1 T he content of this information is s ubject to be changed without notice. P leas e contact P V I or its agent for further information. C us tomer•s C onfirmation

Contextual Info: M IT S U B IS H I BIPO LAR D IG IT A L ICs M 54403P 5 -B IT R IG H T -S H IF T L E F T -S H IF T R E G IS T E R W IT H R ESET DESCRIPTION The M 54403P is a sem ico ndu ctor inte grated c irc u it contain- PIN CONFIGURATION TOP VIEW ng a 5 -b it s e ria l/p a ra lle l input s e ria l/p a ra lle l output re versi­

2SK2736

Abstract: 2SK2736-E PRSS0003AE-A
Contextual Info: 2SK2736 Silicon N Channel MOS FET High Speed Power Switching REJ03G1030-0200 Previous: ADE-208-544 Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 20 mΩ typ. (VGS = 10 V, ID = 15 A) • 4 V gate drive devices. • High speed switching Outline

2SJ453

Contextual Info: 注文コード No. N 5 4 4 4 A 2SJ453 No. N 5 4 4 4 A 21500 新 開発速報 No. ※ 5444 とさしかえてください。 2SJ453 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。

2SK2684

Abstract: 2SK2736 Hitachi DSA00238
Contextual Info: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 1st. Edition Features • Low on-resistance R DS on = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM D G 1 2 S 3 1. Gate

Hitachi DSA00276

Contextual Info: 2SK2736 Silicon N Channel DV–L MOS FET High Speed Power Switching ADE-208-544 Z 1st. Edition Sep. 1997 Features • Low on-resistance R DS(on) = 20 mΩ typ. (VGS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220CFM

Contextual Info: b3E • 1, 2 4* 1 0 2 7 M ITSUBISHI 0014143 Î 6 TL 7T0 I IMITB M IT S U B IS H I B IP O L A R D IG ITA L IC s M54480P LOGIC RGB DECODER DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 54480P is a semiconductor integrated circuit consist­ ing of an ECL-gate RGB decoder capable of 8

5440

Contextual Info: 2010-09-15 Schmitt-Trigger IC in Smart DIL Package Schmitt-Trigger IC im Smart DIL Gehäuse Version 1.0 SFH 5440 Features: Besondere Merkmale: • Output: active "low" • Suitable for applications from 400 nm to 1100 nm • Available on tape and reel • Ausgang: aktiv "low"

19E53

Abstract: TMS320 TMS32020 TMS320C25 TMS320C25-50 TMS320E25 TMS320C2x automotive
Contextual Info: TMS320 SECOND GENERATION DIGITAL SIGNAL PROCESSORS SPRS010B — MAY 1987 — REVISED NOVEMBER 1990 68-Pin GB Package† Top View 80-ns Instruction Cycle Time 544 Words of On-Chip Data RAM 1 2 3 4 5 6 7 8 9 10 11 4K Words of On-Chip Secure Program EPROM (TMS320E25)